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View article: Demonstration of high Johnson’s figure of merit (<i>f</i> <sub>t</sub> × V<sub>BR</sub> >20 THz·V) and <i>f</i> <sub>max</sub> × V<sub>BR</sub> (>42 THz·V) for Al<sub>0.66</sub>Ga<sub>0.34</sub>N channel MISHEMT on bulk AlN substrates
Demonstration of high Johnson’s figure of merit (<i>f</i> <sub>t</sub> × V<sub>BR</sub> >20 THz·V) and <i>f</i> <sub>max</sub> × V<sub>BR</sub> (>42 THz·V) for Al<sub>0.66</sub>Ga<sub>0.34</sub>N channel MISHEMT on bulk AlN substrates Open
In this paper, a metal-organic chemical vapor deposition (MOCVD) grown Al 0.66 Ga 0.34 N channel metal-insulator-semiconductor-high-electron-mobility-transistor (MISHEMT) with a scaled T-gate structure was fabricated on a single-crystal bu…
View article: Demonstration of Si-doped Al-rich thin regrown Al(Ga)N films on AlN on sapphire templates with $\gt10^{15}/cm^3$ free carrier concentration using close-coupled showerhead MOCVD reactor
Demonstration of Si-doped Al-rich thin regrown Al(Ga)N films on AlN on sapphire templates with $\gt10^{15}/cm^3$ free carrier concentration using close-coupled showerhead MOCVD reactor Open
Thin Si-doped Al-rich (Al>0.85) regrown Al(Ga)N layers were deposited on AlN on Sapphire template using metal-organic chemical vapor deposition (MOCVD) techniques. The optimization of the deposition conditions such as temperature, V/III ra…
View article: Significant reduction in sidewall damage related external quantum efficiency (EQE) drop in red InGaN microLEDs (∼625 nm at 1 A cm<sup>−2</sup>) with device sizes down to 3 μm
Significant reduction in sidewall damage related external quantum efficiency (EQE) drop in red InGaN microLEDs (∼625 nm at 1 A cm<sup>−2</sup>) with device sizes down to 3 μm Open
Ultra-small (10 μ m) InGaN-based red microLEDs (625 nm at 1 A cm −2 ) are necessary for modern displays. However, an increase in surface-area-to-volume ratio with a decrease in the micro-LED size resulting in higher surface recombination c…
View article: First Demonstration of Extrinsic C-Doped Semi-Insulating N-Polar GaN Using Propane Precursor Grown on Miscut Sapphire Substrate by MOCVD
First Demonstration of Extrinsic C-Doped Semi-Insulating N-Polar GaN Using Propane Precursor Grown on Miscut Sapphire Substrate by MOCVD Open
In this study, carbon-doped semi-insulating N-polar GaN on a sapphire substrate was prepared using a propane precursor. Controlling the deposition rate of N-polar GaN helped to improve the carbon incorporation efficiency, providing a semi-…
View article: Crack-Free High-Composition (>35%) Thick-Barrier (>30 nm) AlGaN/AlN/GaN High-Electron-Mobility Transistor on Sapphire with Low Sheet Resistance (<250 Ω/□)
Crack-Free High-Composition (>35%) Thick-Barrier (>30 nm) AlGaN/AlN/GaN High-Electron-Mobility Transistor on Sapphire with Low Sheet Resistance (<250 Ω/□) Open
In this article, a high-composition (>35%) thick-barrier (>30 nm) AlGaN/AlN/GaN high-electron-mobility transistor (HEMT) structure grown on a sapphire substrate with ultra-low sheet resistivity (<250 Ω/□) is reported. The optimization of g…
View article: Crack-free high composition (>35%) thick (>30 nm) barrier AlGaN/AlN/GaN HEMT on sapphire with record low sheet resistance
Crack-free high composition (>35%) thick (>30 nm) barrier AlGaN/AlN/GaN HEMT on sapphire with record low sheet resistance Open
In this article, high composition (>35%) thick (>30 nm) barrier AlGaN/AlN/GaN HEMT structure grown on a sapphire substrate with ultra-low sheet resistivity (<250 Ω/ \Box ) is reported. Optimization of growth conditions, such as reduced gro…