Surya Elangovan
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View article: A Comprehensive Study on GaN Power Devices: Reliability, Performance, and Application Perspectives
A Comprehensive Study on GaN Power Devices: Reliability, Performance, and Application Perspectives Open
This review examines recent advances in Gallium Nitride (GaN) power semiconductor devices and their growing impact on the development of high-efficiency power conversion systems. It explores innovations in device design, packaging methods,…
View article: A Reinforcement-Learning Based Approach for Designing High-Voltage SiC MOSFET Guard Rings
A Reinforcement-Learning Based Approach for Designing High-Voltage SiC MOSFET Guard Rings Open
For high-power silicon carbide (SiC) devices, breakdown voltage analysis is an important parameter, especially for guard ring design. This work explores the implementation of machine learning on SiC guard ring parameters such as ion implan…
View article: Dynamic on‐state resistance instability characterization of a multi‐chip‐GaN MIS‐HEMTs cascode power module
Dynamic on‐state resistance instability characterization of a multi‐chip‐GaN MIS‐HEMTs cascode power module Open
The dynamic on‐state resistance instability of a high‐current cascode multi‐GaN‐chip power module under high frequency and voltage switching conditions is demonstrated in this paper. The presented double pulse test topology is utilized to …
View article: Paralleled multi-GaN MIS–HEMTs integrated cascode switch for power electronic applications
Paralleled multi-GaN MIS–HEMTs integrated cascode switch for power electronic applications Open
A cascode gallium nitride (GaN) switch integrating four paralleled GaN depletion-mode metal–insulator–semiconductor–high-electron-mobility transistors (MIS–HEMT) and a silicon MOSFET (Si-MOSFET) is presented. Each GaN chip is wire-bonded i…
View article: Dynamic on-state resistance instability characterization of a Multi-chip-GaN MIS-HEMTs Cascode power module
Dynamic on-state resistance instability characterization of a Multi-chip-GaN MIS-HEMTs Cascode power module Open
The dynamic on-state resistance instability of a high-current cascode multi-GaN-chip power module under high frequency and voltage switching conditions is demonstrated in this paper. The presented double pulse test (DPT) topology is utiliz…
View article: Integrated GaN HEMT Cascode Power Module Stability Analysis under Negative Gate Bias Stress for Power Electronic Applications
Integrated GaN HEMT Cascode Power Module Stability Analysis under Negative Gate Bias Stress for Power Electronic Applications Open
We present a detailed investigation of two forms of negative gate bias stress in four parallel GaN HEMTs in cascode configuration in this article: (i) pulsed off-state gate bias and (ii) negative bias temperature instability (NBTI). Device…
View article: Analysis of Instability Behavior and Mechanism of E-Mode GaN Power HEMT with p-GaN Gate under Off-State Gate Bias Stress
Analysis of Instability Behavior and Mechanism of E-Mode GaN Power HEMT with p-GaN Gate under Off-State Gate Bias Stress Open
In this study, we investigate the degradation characteristics of E-mode GaN High Electron Mobility Transistors (HEMTs) with a p-GaN gate by designed pulsed and prolonged negative gate (VGS) bias stress. Device transfer and transconductance…
View article: Electrical transport properties and impedance analysis of Au/ZnO nanorods/ITO heterojunction device
Electrical transport properties and impedance analysis of Au/ZnO nanorods/ITO heterojunction device Open
Our work involves the growth of well aligned vertical nanorods of ZnO on transparent indium doped tin oxide (ITO) conductive substrate and fabrication of Au/ZnO Nanorods/ITO Heterojunction device. The observation of non-ideal diode current…
View article: Reliability Characterization of Gallium Nitride MIS-HEMT Based Cascode Devices for Power Electronic Applications
Reliability Characterization of Gallium Nitride MIS-HEMT Based Cascode Devices for Power Electronic Applications Open
We present a detailed study of dynamic switching instability and static reliability of a Gallium Nitride (GaN) Metal-Insulator-Semiconductor High-Electron-Mobility-Transistor (MIS-HEMT) based cascode switch under off-state (negative bias) …