T. Shinjo
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View article: Evaluation of Spin Hall Effect in Ferromagnets by Means of Unidirectional Spin Hall Magnetoresistance in Ta/Co Bilayers
Evaluation of Spin Hall Effect in Ferromagnets by Means of Unidirectional Spin Hall Magnetoresistance in Ta/Co Bilayers Open
We investigate unidirectional spin Hall magnetoresistance (USMR) in Ta/Co bilayer systems with various Co thicknesses. A negative USMR is observed when the thickness of Co is thin due to the negative spin Hall angle of Ta, as expected from…
View article: Giant spin Hall angle in the Heusler alloy Weyl ferromagnet <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:msub><mml:mi>Co</mml:mi><mml:mn>2</mml:mn></mml:msub><mml:mi>MnGa</mml:mi></mml:mrow></mml:math>
Giant spin Hall angle in the Heusler alloy Weyl ferromagnet Open
Weyl semimetals are playing a major role in condensed matter physics due to\nexotic topological properties, and their coexistence with ferromagnetism may\nlead to enhanced spin-related phenomena. Here, the inverse spin Hall effect\n(ISHE) …
View article: Detection of Ferromagnetic Resonance from 1 nm-thick Co
Detection of Ferromagnetic Resonance from 1 nm-thick Co Open
To explore the further possibilities of nanometer-thick ferromagnetic films (ultrathin ferromagnetic films), we investigated the ferromagnetic resonance (FMR) of 1 nm-thick Co film. Whilst an FMR signal was not observed for the Co film gro…
View article: Gate-Tunable Spin-Charge Conversion and the Role of Spin-Orbit Interaction in Graphene
Gate-Tunable Spin-Charge Conversion and the Role of Spin-Orbit Interaction in Graphene Open
The small spin-orbit interaction of carbon atoms in graphene promises a long spin diffusion length and the potential to create a spin field-effect transistor. However, for this reason, graphene was largely overlooked as a possible spin-cha…
View article: Tunnel anisotropic magnetoresistance in CoFeB|MgO|Ta junctions
Tunnel anisotropic magnetoresistance in CoFeB|MgO|Ta junctions Open
We found that CoFeB|MgO|Ta tunnel junctions exhibit tunnel anisotropic magnetoresistance (TAMR) at room temperature. The tunnel junctions exhibit positive magnetoresistance with the application of a magnetic field normal to the film plane.…
View article: Growth of perpendicularly magnetized thin films on a polymer buffer and voltage-induced change of magnetic anisotropy at the MgO|CoFeB interface
Growth of perpendicularly magnetized thin films on a polymer buffer and voltage-induced change of magnetic anisotropy at the MgO|CoFeB interface Open
We show that perpendicularly magnetized thin films can be grown onto polyimide, a potentially flexible substrate. With polar Kerr magnetometry, we demonstrate that the coercive field of CoFeB thin film can be modulated by applying a back g…
View article: Experimental Demonstration of Room-Temperature Spin Transport in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mi>n</mml:mi></mml:mrow></mml:math>-Type Germanium Epilayers
Experimental Demonstration of Room-Temperature Spin Transport in-Type Germanium Epilayers Open
We report an experimental demonstration of room-temperature spin transport in n-type Ge epilayers grown on a Si(001) substrate. By utilizing spin pumping under ferromagnetic resonance, which inherently endows a spin battery function for se…