T. Voss
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View article: Time‐Resolved Cathodoluminescence Spectroscopy of Oxygen‐Related Defects in AlN Layers
Time‐Resolved Cathodoluminescence Spectroscopy of Oxygen‐Related Defects in AlN Layers Open
High‐temperature annealing significantly improves the crystal quality of sputter‐deposited AlN templates, but at the same time introduces a high concentration of oxygen‐related point defects. The origin of this oxygen‐related defect lumine…
View article: Wavelength‐Selective, High‐Speed, Self‐Powered Isotype Heterojunction n <sup>+</sup> ‐ZnO/n‐Si Photodetector with Engineered and Tunable Spectral Response
Wavelength‐Selective, High‐Speed, Self‐Powered Isotype Heterojunction n <sup>+</sup> ‐ZnO/n‐Si Photodetector with Engineered and Tunable Spectral Response Open
An isotype heterojunction n + ‐ZnO/n‐Si photodetector is developed, showing adjustable wavelength‐selective operation at self‐powered conditions. Without an external bias voltage, the device can operate either as a broadband UV–vis–NIR or …
View article: Investigations on Diamond-NV-Centers as Alternative Labels in STED Microscopy
Investigations on Diamond-NV-Centers as Alternative Labels in STED Microscopy Open
We investigate diamond nitrogen-vacancy (NV) centers as alternative labels in stimulated emission depletion (STED) microscopy. To this end, artificial diamond is used as a substrate and Raman spectroscopy in photoluminescence (PL) mode is …
View article: A Combination of Ion Implantation and High‐Temperature Annealing: Donor–Acceptor Pairs in Carbon‐Implanted AlN
A Combination of Ion Implantation and High‐Temperature Annealing: Donor–Acceptor Pairs in Carbon‐Implanted AlN Open
Herein, carbon‐implanted high‐temperature annealed (HTA) AlN layers are analyzed and donor–acceptor pair (DAP) transitions probably between the two most abundant impurities, carbon and oxygen, are identified. Both are regarded as the main,…
View article: Ablation threshold of GaN films for ultrashort laser pulses and the role of threading dislocations as damage precursors
Ablation threshold of GaN films for ultrashort laser pulses and the role of threading dislocations as damage precursors Open
The laser-induced ablation threshold of c-plane GaN films upon exposure to ultrashort laser pulses was investigated for different wavelengths from the IR to the UV range and pulse widths between 0.34 and 10 ps. The one-pulse ablation thres…
View article: Versatilely tuned vertical silicon nanowire arrays by cryogenic reactive ion etching as a lithium-ion battery anode
Versatilely tuned vertical silicon nanowire arrays by cryogenic reactive ion etching as a lithium-ion battery anode Open
Production of high-aspect-ratio silicon (Si) nanowire-based anode for lithium ion batteries is challenging particularly in terms of controlling wire property and geometry to improve the battery performance. This report demonstrates tunable…
View article: Time-resolved cathodoluminescence investigations of AlN:Ge/GaN nanowire structures
Time-resolved cathodoluminescence investigations of AlN:Ge/GaN nanowire structures Open
Light emitting diodes represent a key technology that can be found in many areas of everydays life. Therefore, the improvement of the efficiency of such structures offers a high economic and ecological potential. One approach is electrosta…
View article: Wafer-scale transfer route for top–down III-nitride nanowire LED arrays based on the femtosecond laser lift-off technique
Wafer-scale transfer route for top–down III-nitride nanowire LED arrays based on the femtosecond laser lift-off technique Open
The integration of gallium nitride (GaN) nanowire light-emitting diodes (nanoLEDs) on flexible substrates offers opportunities for applications beyond rigid solid-state lighting (e.g., for wearable optoelectronics and bendable inorganic di…
View article: Optimizing a Cantilever Measurement System towards High Speed, Nonreactive Contact-Resonance-Profilometry (Data)
Optimizing a Cantilever Measurement System towards High Speed, Nonreactive Contact-Resonance-Profilometry (Data) Open
Raw data, scripts and figures used for the article "Optimizing a Cantilever Measurement System towards High Speed, Nonreactive Contact-Resonance-Profilometry", published in Proceedings on 21 Nov 2018. The data/scripts can be opened/execute…
View article: Optimizing a Cantilever Measurement System towards High Speed, Nonreactive Contact-Resonance-Profilometry (Data)
Optimizing a Cantilever Measurement System towards High Speed, Nonreactive Contact-Resonance-Profilometry (Data) Open
Raw data, scripts and figures used for the article "Optimizing a Cantilever Measurement System towards High Speed, Nonreactive Contact-Resonance-Profilometry", published in Proceedings on 21 Nov 2018. The data/scripts can be opened/execute…
View article: Controlled formation of Schottky diodes on n-doped ZnO layers by deposition of p-conductive polymer layers with oxidative chemical vapor deposition
Controlled formation of Schottky diodes on n-doped ZnO layers by deposition of p-conductive polymer layers with oxidative chemical vapor deposition Open
We report the controlled formation of organic/inorganic Schottky diodes by depositing poly(3,4-ethylenedioxythiophene) (PEDOT) on n-doped ZnO layers using oxidative chemical vapor deposition (oCVD). Current-voltage measurements reveal the …
View article: Third-Order Nonlinear Spectrum of GaN under Femtosecond-Pulse Excitation from the Visible to the Near Infrared
Third-Order Nonlinear Spectrum of GaN under Femtosecond-Pulse Excitation from the Visible to the Near Infrared Open
Gallium nitride (GaN) has been established as a promising candidate for integrated electro-optic and photonic devices, aiming at applications from optical switching to signal processing. Studies of its optical nonlinearities, however, lack…
View article: 3D GaN Fins as a Versatile Platform for a‐Plane‐Based Devices
3D GaN Fins as a Versatile Platform for a‐Plane‐Based Devices Open
GaN fins on GaN‐on‐sapphire templates are fabricated by continuous mode selective area metalorganic vapor phase epitaxy. The fins exhibit high aspect ratios and smooth nonpolar a‐plane sidewalls with an ultra‐low threading dislocation dens…
View article: Optimizing a Cantilever Measurement System towards High Speed, Nonreactive Contact-Resonance-Profilometry
Optimizing a Cantilever Measurement System towards High Speed, Nonreactive Contact-Resonance-Profilometry Open
An existing phase-locked-loop (PLL) based contact-resonance measurement system is studied and optimized. Improvements to the electronics’ circuit to reduce both nonlinear behavior and noise are realized and experimentally tested. The impro…
View article: Photoluminescence of planar and 3D InGaN/GaN LED structures excited with femtosecond laser pulses close to the damage threshold
Photoluminescence of planar and 3D InGaN/GaN LED structures excited with femtosecond laser pulses close to the damage threshold Open
We study the photoluminescence emission from planar and 3D InGaN/GaN LED structures, excited using a femtosecond laser with fluences close to sample’s damage threshold. For a typical laser system consisting of a titanium-sapphire regenerat…
View article: Carrier dynamics and optical nonlinearities in a GaN epitaxial thin film under three-photon absorption
Carrier dynamics and optical nonlinearities in a GaN epitaxial thin film under three-photon absorption Open
We studied the near-band-edge emission (NBE) and yellow defect luminescence (YL) of GaN under below bandgap excitation with 40-fs laser pulses at a wavelength of 775 nm. Even though in this case three-photon absorption processes are requir…
View article: Electron Tunneling from Colloidal CdSe Quantum Dots to ZnO Nanowires Studied by Time-Resolved Luminescence and Photoconductivity Experiments
Electron Tunneling from Colloidal CdSe Quantum Dots to ZnO Nanowires Studied by Time-Resolved Luminescence and Photoconductivity Experiments Open
CdSe quantum dots (QDs) with different organic linker molecules are attached to ZnO nanowires (NWs) to study the luminescence dynamics and the electron tunneling from the QDs to the nanowires in time-resolved photoluminescence (PL) and pho…
View article: Highly hydrophobic hierarchical nanomicro roughness polymer surface created by stamping and laser micromachining
Highly hydrophobic hierarchical nanomicro roughness polymer surface created by stamping and laser micromachining Open
This article describes the design and fabrication of hierarchical nanomicrostructured polymer surfaces with high hydrophobicity. The nanoscale roughness is achieved by stamping a ZnO nanowire film into PDMS. Subsequently, microstructures w…
View article: Electron tunneling from colloidal CdSe quantum dots to ZnO nanowires\n studied by time-resolved luminescence and photoconductivity experiments
Electron tunneling from colloidal CdSe quantum dots to ZnO nanowires\n studied by time-resolved luminescence and photoconductivity experiments Open
CdSe quantum dots (QDs) with different organic linker molecules are attached\nto ZnO nanowires (NWs) to study the luminescence dynamics and the electron\ntunneling from the QDs to the nanowires in time-resolved photoluminescence (PL)\nand …