Taehee Yoo
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View article: Magnetization reversal and interlayer exchange coupling in ferromagnetic metal/semiconductor Fe/GaMnAs hybrid bilayers
Magnetization reversal and interlayer exchange coupling in ferromagnetic metal/semiconductor Fe/GaMnAs hybrid bilayers Open
We report a detailed study of magnetization reversal in Fe/GaMnAs bilayers carried out by magnetotransport measurements. Specifically, we have used planar Hall resistance (PHR), which is highly sensitive to the direction of magnetization, …
View article: Field-free manipulation of magnetization alignments in a Fe/GaAs/GaMnAs multilayer by spin-orbit-induced magnetic fields
Field-free manipulation of magnetization alignments in a Fe/GaAs/GaMnAs multilayer by spin-orbit-induced magnetic fields Open
We investigate the process of selectively manipulating the magnetization alignment in magnetic layers in the Fe/GaAs/GaMnAs structure by current-induced spin-orbit (SO) magnetic field. The presence of such fields manifests itself through t…
View article: Thermal conductivity of Bi<sub>2</sub>(Se<sub>x</sub>Te<sub>1−x</sub>)<sub>3</sub> alloy films grown by molecular beam epitaxy
Thermal conductivity of Bi<sub>2</sub>(Se<sub>x</sub>Te<sub>1−x</sub>)<sub>3</sub> alloy films grown by molecular beam epitaxy Open
We studied the thermal conductivity of Bi2Se3, Bi2Te3, and their alloy Bi2(SexTe1−x)3 at room temperature using time-domain thermoreflectance measurements. The Bi2(SexTe1−x)3 films with various concentrations of Se and Te prepared by molec…
View article: Non-volatile logic gates based on planar Hall effect in magnetic films with two in-plane easy axes
Non-volatile logic gates based on planar Hall effect in magnetic films with two in-plane easy axes Open
View article: Magnetic properties of Ni films deposited on MBE grown Bi2Se3 layers
Magnetic properties of Ni films deposited on MBE grown Bi2Se3 layers Open
We have investigated the magnetic properties of the Ni films deposited on a GaAs and a Bi2Se3 buffer grown by molecular beam epitaxy on a GaAs (001) substrate. The magnetization measurements at 4 K revealed that the coercivity of the Ni fi…
View article: Room temperature weak ferromagnetism in Sn1−xMnxSe2 2D films grown by molecular beam epitaxy
Room temperature weak ferromagnetism in Sn1−xMnxSe2 2D films grown by molecular beam epitaxy Open
We discuss growth and magnetic properties of high-quality two dimensional (2D) Sn1−xMnxSe2 films. Thin films of this 2D ternary alloy with a wide range of Mn concentrations were successfully grown by molecular beam epitaxy. Mn concentratio…
View article: Magnetic anisotropy of crystalline Fe films grown on (001) GaAs substrates using Ge buffer layers
Magnetic anisotropy of crystalline Fe films grown on (001) GaAs substrates using Ge buffer layers Open
Magnetic anisotropy of Fe films grown on (001) GaAs substrates using Ge buffer layers were investigated by planar Hall effect measurements. In addition to phenomena arising from dominant cubic symmetry of the Fe specimen, the study of angu…
View article: Observation of uniaxial anisotropy along the [100] direction in crystalline Fe film
Observation of uniaxial anisotropy along the [100] direction in crystalline Fe film Open
View article: Fluorine-ion-beam modification of magnetic properties of thin GaMnAs films
Fluorine-ion-beam modification of magnetic properties of thin GaMnAs films Open
Magnetic and electrical transport properties of fluorine-ion-beam irradiated GaMnAs films were studied as a function of ion fluence and energy of impinging ions. The different nature of defects created by ions of low- and high-energies is …