Takashi Onaya
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View article: Anomalous formation of carbon-related defects during high temperature Ar annealing in 4H-SiC enhanced by prior thermal oxidation
Anomalous formation of carbon-related defects during high temperature Ar annealing in 4H-SiC enhanced by prior thermal oxidation Open
Using attenuated total reflectance Fourier-transform infrared spectroscopy (ATR-FTIR), we found that the thermal oxidation of SiC significantly enhances the formation of carbon related defects during a following high temperature Ar anneali…
View article: Detection of defects with carbon–carbon single-bonds in near-surface region of SiC induced by low-oxygen-partial-pressure annealing by using FTIR
Detection of defects with carbon–carbon single-bonds in near-surface region of SiC induced by low-oxygen-partial-pressure annealing by using FTIR Open
In this study, we investigated the formation of defects with carbon–carbon single-bonds in 4H-SiC induced by high-temperature annealing under low oxygen-partial-pressure ( P o 2 ) conditions, using attenuated total reflectance Fourier-tran…
View article: Enhancement of remnant polarization in ferroelectric HfO<sub>2</sub> thin films induced by mechanical uniaxial tensile strain after the crystallization process
Enhancement of remnant polarization in ferroelectric HfO<sub>2</sub> thin films induced by mechanical uniaxial tensile strain after the crystallization process Open
The effect of strain on the ferroelectricity of HfO 2 thin films after crystallization was investigated by applying uniaxial mechanical strains to Au/HfO 2 /TiN metal–ferroelectric–metal (MFM) capacitors. The remnant polarization (2 P r ) …
View article: Development of ferroelectricity with crystallographic phase transformation in Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> thin films upon initial stimulation of an electric field exceeding the coercive field
Development of ferroelectricity with crystallographic phase transformation in Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> thin films upon initial stimulation of an electric field exceeding the coercive field Open
This study demonstrates a drastic transformation of ferroelectricity and crystallographic phase in Hf 0.5 Zr 0.5 O 2 (HZO) thin films through the first stimulation of an electric field larger than the coercive field in metal-ferroelectric-…
View article: Effects of oxidant gas for atomic layer deposition on crystal structure and fatigue of ferroelectric HfxZr1−xO2 thin films
Effects of oxidant gas for atomic layer deposition on crystal structure and fatigue of ferroelectric HfxZr1−xO2 thin films Open
View article: (Invited) Fabrication Technique of Ferroelectric Hf<sub>x</sub>Zr<sub>1−X</sub>O<sub>2</sub> Thin Films Using ALD-ZrO<sub>2</sub> Nucleation Layers
(Invited) Fabrication Technique of Ferroelectric Hf<sub>x</sub>Zr<sub>1−X</sub>O<sub>2</sub> Thin Films Using ALD-ZrO<sub>2</sub> Nucleation Layers Open
The crystallinity and electrical properties of ferroelectric Hf 0.43 Zr 0.57 O 2 (HZO) thin films fabricated using atomic layer deposited ZrO 2 nucleation layers (ZrO 2 -NLs) were systematically studied. The remanent polarization (2 P r = …
View article: Toward Low-Thermal-Budget Hafnia-Based Ferroelectrics via Atomic Layer Deposition
Toward Low-Thermal-Budget Hafnia-Based Ferroelectrics via Atomic Layer Deposition Open
Since the first report of ferroelectricity in fluorite structure oxides a decade ago, significant attention has been devoted to studying hafnia-based ferroelectric material systems due to their promising properties and opportunities. To ac…
View article: Role of Interface Reaction Layer between Ferroelectric Hfxzr1−Xo2 Thin Film and Tin Electrode on Endurance Properties
Role of Interface Reaction Layer between Ferroelectric Hfxzr1−Xo2 Thin Film and Tin Electrode on Endurance Properties Open
View article: Wake-up-free properties and high fatigue resistance of Hf<i>x</i>Zr1−<i>x</i>O2-based metal–ferroelectric–semiconductor using top ZrO2 nucleation layer at low thermal budget (300 °C)
Wake-up-free properties and high fatigue resistance of Hf<i>x</i>Zr1−<i>x</i>O2-based metal–ferroelectric–semiconductor using top ZrO2 nucleation layer at low thermal budget (300 °C) Open
Ferroelectricity and crystallinity of TiN/ZrO2/HfxZr1−xO2 (Hf:Zr = 0.43:0.57; HZO)/SiO2/Si metal–ferroelectric–semiconductor (MFS) capacitors with a top ZrO2 nucleation layer fabricated by low-temperature processes at 300 °C of atomic laye…
View article: Ferroelectric polarization retention with scaling of Hf0.5Zr0.5O2 on silicon
Ferroelectric polarization retention with scaling of Hf0.5Zr0.5O2 on silicon Open
In this paper, we investigate the polarization retention of Hf0.5Zr0.5O2 (HZO)-based metal–ferroelectric–insulator–Si (MFIS) capacitors with scaling of the ferroelectric (FE) layer thickness from 5 nm to 20 nm. The capacitors have a consta…
View article: Correlation between ferroelectricity and ferroelectric orthorhombic phase of HfxZr1−xO2 thin films using synchrotron x-ray analysis
Correlation between ferroelectricity and ferroelectric orthorhombic phase of HfxZr1−xO2 thin films using synchrotron x-ray analysis Open
The change in the interplanar spacing (d-spacing) including the ferroelectric orthorhombic (O) phase in the low-temperature fabricated HfxZr1−xO2 (HZO) films was studied using synchrotron grazing-incidence wide-angle x-ray scattering analy…
View article: Overseas Research and Life in Texas
Overseas Research and Life in Texas Open
View article: Improvement in ferroelectricity of HfxZr1−xO2 thin films using top- and bottom-ZrO2 nucleation layers
Improvement in ferroelectricity of HfxZr1−xO2 thin films using top- and bottom-ZrO2 nucleation layers Open
A ferroelectric HfxZr1−xO2 (HZO) thin film crystallized with nanocrystalline top- and bottom-ZrO2 nucleation layers (D-ZrO2) exhibited superior remanent polarization (2Pr = Pr+ − Pr− = 29 μC/cm2) compared to that of similar thin films (12 …