Takashi Suemasu
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View article: Progress and perspectives on polycrystalline germanium thin films: Advances in solid-phase crystallization
Progress and perspectives on polycrystalline germanium thin films: Advances in solid-phase crystallization Open
Polycrystalline germanium (Ge) thin films have reemerged as promising materials for next-generation electronic and optoelectronic devices because of their superior electrical and optical properties. However, challenges such as high defect …
View article: Hydrogen passivation effects on polycrystalline germanium thin films
Hydrogen passivation effects on polycrystalline germanium thin films Open
The performance of polycrystalline Ge thin films, anticipated for application in advanced electronic and optical devices, has markedly improved in recent years. However, the high density of acceptor defects in Ge complicates Fermi level co…
View article: Crystal and electrical properties of polycrystalline In1−xGaxAs thin films directly formed on insulators
Crystal and electrical properties of polycrystalline In1−xGaxAs thin films directly formed on insulators Open
View article: Exploring ionic liquid assisted chemical bath deposition of a highly uniform and transparent cadmium sulfide thin film for photovoltaic applications
Exploring ionic liquid assisted chemical bath deposition of a highly uniform and transparent cadmium sulfide thin film for photovoltaic applications Open
Improved cadmium sulfied (CdS) thin films via controlled deposition using ionic liquids.
View article: Effects of annealing conditions on the battery anode properties of multilayer graphene due to layer exchange
Effects of annealing conditions on the battery anode properties of multilayer graphene due to layer exchange Open
Annealing conditions in layer-exchange synthesis affect multilayer graphene's crystallinity and anode performance. Synthesis at 400 °C showed excellent capacity retention and fast charging, paving the way for high-performance thin-film bat…
View article: Semantic segmentation in crystal growth process using fake micrograph machine learning
Semantic segmentation in crystal growth process using fake micrograph machine learning Open
Microscopic evaluation is one of the most effective methods in materials research. High-quality images are essential to analyze microscopic images using artificial intelligence. To overcome this challenge, we propose the machine learning o…
View article: Point defects in BaSi2 identified and analyzed by electron paramagnetic resonance, photoluminescence and density functional theory
Point defects in BaSi2 identified and analyzed by electron paramagnetic resonance, photoluminescence and density functional theory Open
International audience
View article: Layer Exchange Synthesis of SiGe for Flexible Thermoelectric Generators: A Comprehensive Review (Adv. Electron. Mater. 7/2024)
Layer Exchange Synthesis of SiGe for Flexible Thermoelectric Generators: A Comprehensive Review (Adv. Electron. Mater. 7/2024) Open
View article: Layer Exchange Synthesis of SiGe for Flexible Thermoelectric Generators: A Comprehensive Review
Layer Exchange Synthesis of SiGe for Flexible Thermoelectric Generators: A Comprehensive Review Open
Flexible thermoelectric generators are leading candidates for next‐generation energy‐harvesting devices. Although SiGe, an environmentally‐friendly semiconductor, is the most reliable and widely tested thermoelectric material, it is diffic…
View article: Prediction and Elucidation of Physical Properties of Polycrystalline Materials Using Multichannel Machine Learning of Electron Backscattering Diffraction
Prediction and Elucidation of Physical Properties of Polycrystalline Materials Using Multichannel Machine Learning of Electron Backscattering Diffraction Open
The application of machine learning in materials science has yielded several benefits, including the prediction of physical properties and the improvement of experimental efficiency. However, with complex models, such as convolutional neur…
View article: Strain-dependent grain boundary properties of n-type germanium layers
Strain-dependent grain boundary properties of n-type germanium layers Open
Polycrystalline Ge thin films have attracted considerable attention as potential materials for use in various electronic and optical devices. We recently developed a low-temperature solid-phase crystallization technology for a doped Ge lay…
View article: Bayesian optimization-driven enhancement of the thermoelectric properties of polycrystalline III-V semiconductor thin films
Bayesian optimization-driven enhancement of the thermoelectric properties of polycrystalline III-V semiconductor thin films Open
Studying the properties of thermoelectric materials needs substantial effort owing to the interplay of the trade-off relationships among the influential parameters. In view of this issue, artificial intelligence has recently been used to i…
View article: Effect of template on the photoresponsivity of BaSi2 films grown on Ge(111) substrates by molecular beam epitaxy
Effect of template on the photoresponsivity of BaSi2 films grown on Ge(111) substrates by molecular beam epitaxy Open
Epitaxial growth of BaSi2 films on Si(111) has demonstrated that the BaSi2 template can serve as a seed crystal for BaSi2 overlayers by molecular beam epitaxy (MBE) and shows high photoresponsivity, but not yet on Ge(111) substrates. We ha…
View article: Effect of high-temperature postannealing atmosphere on the properties of BaSi2 films
Effect of high-temperature postannealing atmosphere on the properties of BaSi2 films Open
We evaluated the effect of O atoms on the postannealed BaSi2 films grown by molecular beam epitaxy. Postannealing (PA) in an Ar atmosphere at a pressure of 1.9 × 105 Pa increased the O concentration to 7 × 1020 cm−3 in the bulk region and …
View article: Ultrafast CIDWM in Mn4N strips
Ultrafast CIDWM in Mn4N strips Open
In chapter 4, we describe ultrafast current-induced domain wall motion demonstrated in Mn4N epitaxial thin films.
View article: Growth and characterization of compensated Mn4N epitaxial films
Growth and characterization of compensated Mn4N epitaxial films Open
In chapter 5, we introduce Ni or Co-doped Mn4N films that compensate for magnetization at room temperature.
View article: High thermoelectric performance in polycrystalline Yb3Ge5 thin films
High thermoelectric performance in polycrystalline Yb3Ge5 thin films Open
The development of eco-friendly thin-film thermoelectric generators for microenergy harvesting applications is highly desired. Ge-based materials have recently attracted significant research interest because of their superior performance a…
View article: Rare-earth-free Ferrimagnetic Mn4N Spintronics
Rare-earth-free Ferrimagnetic Mn4N Spintronics Open
Since the discovery of perpendicular magnetic anisotropy in Mn4N epitaxial films in 2012, Mn4N has attracted much attention as a rare-earth free new spintronics material. The recent record velocity of current-induced …
View article: Introduction
Introduction Open
Chapter 1 discusses the origin of the magnetic moment of atoms, the principle of magnetic domain walls, STT, spin-orbit torque (SOT), and magnetic domain wall motion, and concludes with a summary of the characteristics of Mn4N.
View article: Exploring the effect of interface properties between CeO<sub> <i>x</i> </sub> electron transport layer and MAPbI<sub>3</sub> perovskite layer on solar cell performances through numerical simulation
Exploring the effect of interface properties between CeO<sub> <i>x</i> </sub> electron transport layer and MAPbI<sub>3</sub> perovskite layer on solar cell performances through numerical simulation Open
Organo-metal halide perovskite solar cells (PSCs) have received a lot of attention to the photovoltaic research community, mainly due to the rapid development of their cell performances. But industry-level production of PSCs is hindered fo…
View article: Fabrication of highly oriented Mn4N/Pt epitaxial bilayer structure on MgO(001) for spintronics applications
Fabrication of highly oriented Mn4N/Pt epitaxial bilayer structure on MgO(001) for spintronics applications Open
Magnetization control by electric current or spin current is an attractive technology with potential applications in memory and logic devices, and Mn4N has attracted much attention in recent years as a candidate material for current-induce…
View article: Metal-induced lateral crystallization of germanium thin films
Metal-induced lateral crystallization of germanium thin films Open
Recent advances in polycrystalline Ge layers formed through solid-phase crystallization have demonstrated carrier mobilities superior to those of single-crystal Si. In this study, we thoroughly examined the phenomenon of metal-induced late…
View article: Ferrimagnetic-ferromagnetic phase transition in Au-doped Mn4N epitaxial films confirmed by x-ray magnetic circular dichroism
Ferrimagnetic-ferromagnetic phase transition in Au-doped Mn4N epitaxial films confirmed by x-ray magnetic circular dichroism Open
The antiperovskite ferrimagnet Mn4N has perpendicular magnetic anisotropy and small spontaneous magnetization, both of which are favorable properties for current induced domain wall motion. Previously we have investigated the magnetic stru…
View article: n-Type Polycrystalline Germanium Layers Formed by Impurity-Doped Solid-Phase Growth
n-Type Polycrystalline Germanium Layers Formed by Impurity-Doped Solid-Phase Growth Open
The carrier mobility of polycrystalline Ge thin-film transistors has significantly improved in recent years, raising hopes for the realization of next-generation electronic devices. Here, we adapted advanced solid-phase crystallization, wh…
View article: Sign reversal in anomalous Hall effect at two Sn compositions in Mn4−<i>x</i>Sn<i>x</i>N films on MgO(001) substrates
Sign reversal in anomalous Hall effect at two Sn compositions in Mn4−<i>x</i>Sn<i>x</i>N films on MgO(001) substrates Open
Rare-earth-free Mn4N has attracted increasing attention as a spintronic material thanks to its ferrimagnetism, perpendicular magnetic anisotropy, and controllability of magnetic properties by partial replacement of Mn atoms with other elem…
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GUEST EDITORS Open
View article: Effect of morphology on the phonon thermal conductivity in Si/Ge superlattice nanowires
Effect of morphology on the phonon thermal conductivity in Si/Ge superlattice nanowires Open
We used nonequilibrium molecular dynamics to investigate the role of morphology in the phonon thermal conductivity of 〈100〉, 〈110〉, 〈111〉 and 〈112〉-oriented Si/Ge superlattice nanowires at 300 K. Such nanowires with 〈112〉 growth direction …
View article: Short-range spin order in paramagnetic AgCrSe2
Short-range spin order in paramagnetic AgCrSe2 Open
Muon spin rotation (μSR) experiments were performed to directly investigate the temperature dependence of the short-range order or correlations of chromium spins in the paramagnetic phase of AgCrSe2. The detailed investigation of the μSR s…
View article: Demonstration of B-ion-implanted p-BaSi<sub>2</sub>/n-Si heterojunction solar cells
Demonstration of B-ion-implanted p-BaSi<sub>2</sub>/n-Si heterojunction solar cells Open
The implantation of B atoms into BaSi 2 epitaxial films grown by molecular beam epitaxy was performed to form p-type BaSi 2 films. It was revealed by Raman spectroscopy that the ion-implantation damage induced in the implanted BaSi 2 films…
View article: Structural design of BaSi<sub>2</sub> solar cells with a-SiC electron-selective transport layers
Structural design of BaSi<sub>2</sub> solar cells with a-SiC electron-selective transport layers Open
Sputter-deposited polycrystalline BaSi 2 films capped with a 5 nm thick a-SiC layer showed high photoresponsivity. This means that the a-SiC layer functions as a capping layer to prevent surface oxidation of BaSi 2 . Based on the measured …