Tangsheng Chen
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View article: Enhancement of drain soft-breakdown strength to 1.1 MV/cm for hydrogen-terminated diamond MOSFETs by mitigating hydrogen-induced defects
Enhancement of drain soft-breakdown strength to 1.1 MV/cm for hydrogen-terminated diamond MOSFETs by mitigating hydrogen-induced defects Open
Diamond surface quality is critical to improve the power and reliability for the hydrogen-terminated diamond (H-diamond) metal-oxide-semiconductor field-effect transistors (MOSFETs). In this Letter, significant surface microdefects were id…
View article: Hong–Ou–Mandel interferometry and quantum metrology with multimode frequency-bin entangled photons
Hong–Ou–Mandel interferometry and quantum metrology with multimode frequency-bin entangled photons Open
Quantum entanglement is a vital resource in quantum information processing. High-dimensional quantum entanglement offers advantages that classical systems cannot surpass, particularly in enhancing channel capacity, improving system noise r…
View article: Performance Enhancement of Planar GaAs Photoconductive Semiconductor Switches by Introducing p-Type Epitaxial Layer
Performance Enhancement of Planar GaAs Photoconductive Semiconductor Switches by Introducing p-Type Epitaxial Layer Open
Gallium arsenide photoconductive semiconductor switches (GaAs PCSSs) have attracted much attention in pulsed power systems and high-power microwave sources. The quality of ohmic contact has a significant impact on their switching performan…
View article: An ultra-compact integrated phase shifter <i>via</i> electrically tunable meta-waveguides
An ultra-compact integrated phase shifter <i>via</i> electrically tunable meta-waveguides Open
This work introduces a compact and low-power integrated phase shifter using liquid crystal (LC) meta-waveguides, offering advantages over thermal optical phase shifters in size, power consumption, and integration potential for photonic cir…
View article: 280–300 GHz SiGe‐InP hybrid‐integrated transmitter with 21.9 dBm EIRP and 10 Gbps data rate
280–300 GHz SiGe‐InP hybrid‐integrated transmitter with 21.9 dBm EIRP and 10 Gbps data rate Open
In this paper, a 280–300 GHz hybrid‐integrated transmitter is proposed. The advantages of the SiGe and InP chips are fully made use by integrating these two chips. For low cost and high integration, the local oscillator chain and mixer are…
View article: Experimental quantum Byzantine agreement on a three-user quantum network with integrated photonics
Experimental quantum Byzantine agreement on a three-user quantum network with integrated photonics Open
Quantum communication networks are crucial for both secure communication and cryptographic networked tasks. Building quantum communication networks in a scalable and cost-effective way is essential for their widespread adoption. Here, we e…
View article: Heterogeneous Integration for High Performance Electronic and Photonic Devices
Heterogeneous Integration for High Performance Electronic and Photonic Devices Open
In this paper, two representative heterogeneous integrated applications with great performance based on epitaxial layer transfer process are reported. The SiC integrated Si PIN limiter has shown power handling capability of 150W (continues…
View article: Coexistence of multiuser entanglement distribution and classical light in optical fiber network with a semiconductor chip
Coexistence of multiuser entanglement distribution and classical light in optical fiber network with a semiconductor chip Open
Building communication links among multiple users in a scalable and robust way is a key objective in achieving large-scale quantum networks. In a realistic scenario, noise from the coexisting classical light is inevitable and can ultimatel…
View article: Accurate on Wafer Calibration and S-parameter Measurement Setup for InP-based HEMT Devices to 220 GHz
Accurate on Wafer Calibration and S-parameter Measurement Setup for InP-based HEMT Devices to 220 GHz Open
In this paper, the on-wafer S-parameter measurement of InP-Based HEMT devices up to 220 GHz is presented.The calibration kits utilizing a CPWG structure are meticulously designed on an InP substrate.The corresponding structure for calibrat…
View article: 2.1 W/mm Output Power Density at 10 GHz for H-Terminated Diamond MOSFETs With (111)-Oriented Surface
2.1 W/mm Output Power Density at 10 GHz for H-Terminated Diamond MOSFETs With (111)-Oriented Surface Open
This paper presents high performance hydrogen-terminated diamond MOSFETs fabricated on a (111)-oriented single-crystal diamond substrate. The diamond surface was passivated by a high-quality Al2O3 grown by ALD at 350°C as well as a seconda…
View article: Dynamic Spectral Modulation on Meta‐Waveguides Utilizing Liquid Crystal
Dynamic Spectral Modulation on Meta‐Waveguides Utilizing Liquid Crystal Open
The integration of metasurfaces and optical waveguides is gradually attracting the attention of researchers because it allows for more efficient manipulation and guidance of light. However, most of the existing studies focus on passive dev…
View article: Coexistence of multiuser entanglement distribution and classical light in optical fiber network with a semiconductor chip
Coexistence of multiuser entanglement distribution and classical light in optical fiber network with a semiconductor chip Open
Building communication links among multiple users in a scalable and robust way is a key objective in achieving large-scale quantum networks. In realistic scenario, noise from the coexisting classical light is inevitable and can ultimately …
View article: Hydrogen-Terminated Diamond Field-Effect Transistors with Ultrahigh On/Off Ratio Using an Al2O3/HfO2 Stacked Passivation Layer
Hydrogen-Terminated Diamond Field-Effect Transistors with Ultrahigh On/Off Ratio Using an Al2O3/HfO2 Stacked Passivation Layer Open
Diamond-based devices with high on/off ratio are promising candidates for power and sensors applications at high temperatures. However, the limited on/off ratio caused by relatively high leakage currents still remains to be a problem. Here…
View article: Full characterization of spontaneous parametric down conversion in non-ideal quarter-wavelength semiconductor Bragg reflection waveguide
Full characterization of spontaneous parametric down conversion in non-ideal quarter-wavelength semiconductor Bragg reflection waveguide Open
Entangled photons are important for testing foundations of quantum physics and are at the heart of quantum technology. Integrated photonics has overwhelming dominance in terms of density and performance, making it a promise route for scala…
View article: Transfer printed GaAs Schottky barrier diode on quartz for terahertz mixer and frequency multiplier
Transfer printed GaAs Schottky barrier diode on quartz for terahertz mixer and frequency multiplier Open
GaAs Schottky barrier diode (SBD) based terahertz mixer and frequency multiplier represent one of the most important method for terahertz signal emitting and receiving from 0.5THz to 5THz. Compared with original GaAs substrate, quartz usin…
View article: High-efficiency non-ideal quarter-wavelength Bragg reflection waveguide for photon-pair generation
High-efficiency non-ideal quarter-wavelength Bragg reflection waveguide for photon-pair generation Open
Quantum light source is a promising resource for quantum-enhanced technologies and tests of quantum mechanics. In the race towards scalable quantum information processing, integrated photonics has recently emerged as a powerful platform. S…
View article: 1 W/mm Output Power Density for H-Terminated Diamond MOSFETs With Al<sub>2</sub>O<sub>3</sub>/SiO<sub>2</sub>Bi-Layer Passivation at 2 GHz
1 W/mm Output Power Density for H-Terminated Diamond MOSFETs With Al<sub>2</sub>O<sub>3</sub>/SiO<sub>2</sub>Bi-Layer Passivation at 2 GHz Open
We have demonstrated a novel method of depositing ALD-Al2O3/PECVD-SiO2 bi-layer dielectric to passive the surface channels of the hydrogen-terminated diamond (H-diamond). After Al2O3/S…
View article: Effect of x-ray irradiation on threshold voltage of AlGaN/GaN HEMTs with p-GaN and MIS gates
Effect of x-ray irradiation on threshold voltage of AlGaN/GaN HEMTs with p-GaN and MIS gates Open
Commercially available AlGaN/GaN high-electron-mobility transistors (HEMTs) are beginning to enter the public scene from a range of suppliers. Based on previous studies, commercial GaN-based electronics are expected to be tolerant to diffe…
View article: Negative constant voltage stress-induced threshold voltage instability in hydrogen-terminated diamond MOSFETs with low-temperature deposited Al2O3
Negative constant voltage stress-induced threshold voltage instability in hydrogen-terminated diamond MOSFETs with low-temperature deposited Al2O3 Open
Threshold voltage analysis can help reveal the reliability of semiconductor transistors and its underlying mechanism. Herein, negative constant voltage stress (NCVS)-induced threshold voltage instability is studied in hydrogen-terminated d…
View article: Transient Simulation for the Thermal Design Optimization of Pulse Operated AlGaN/GaN HEMTs
Transient Simulation for the Thermal Design Optimization of Pulse Operated AlGaN/GaN HEMTs Open
The thermal management and channel temperature evaluation of GaN power amplifiers are indispensable issues in engineering field. The transient thermal characteristics of pulse operated AlGaN/GaN high electron mobility transistors (HEMT) us…
View article: Integrating high-quality dielectrics with one-nanometer equivalent oxide thickness on two-dimensional electronic devices
Integrating high-quality dielectrics with one-nanometer equivalent oxide thickness on two-dimensional electronic devices Open
Two-dimensional (2D) semiconductors are widely recognized as attractive channel materials for low-power electronics. However, an unresolved challenge is the integration of high-quality, ultrathin high-\k{appa} dielectrics that fully meet t…
View article: Wide Bandgap Semiconductor Based Micro/Nano Devices
Wide Bandgap Semiconductor Based Micro/Nano Devices Open
While group IV or III-V based device technologies have reached their technical limitations (e.g., limited detection wavelength range or low power handling capability), wide bandgap (WBG) semiconductors which have band-gaps greater than 3 e…
View article: A Large-Signal Model for Two-Dimensional Hole Gas Diamond MOSFET Based on the QPZD
A Large-Signal Model for Two-Dimensional Hole Gas Diamond MOSFET Based on the QPZD Open
A compact large-signal model for hydrogen-terminated (C-H) diamond metal-oxide field effect transistors (MOSFETs) is presented based on an improved quasi-physical zone division (QPZD) model. Unlike the conventional QPZD model for the AlGaN…
View article: An Improved Large Signal Model for 0.1 μm AlGaN/GaN High Electron Mobility Transistors (HEMTs) Process and Its Applications in Practical Monolithic Microwave Integrated Circuit (MMIC) Design in W band
An Improved Large Signal Model for 0.1 μm AlGaN/GaN High Electron Mobility Transistors (HEMTs) Process and Its Applications in Practical Monolithic Microwave Integrated Circuit (MMIC) Design in W band Open
An improved empirical large signal model for 0.1 µm AlGaN/GaN high electron mobility transistor (HEMT) process is proposed in this paper. The short channel effect including the drain induced barrier lowering (DIBL) effect and channel lengt…
View article: Improvement of Power Performance of GaN HEMT by Using Quaternary InAlGaN Barrier
Improvement of Power Performance of GaN HEMT by Using Quaternary InAlGaN Barrier Open
High power performance InAlGaN/GaN high electron mobility transistor (HEMT) as a candidate for high power and high frequency amplifiers has been demonstrated versus the conventional AlGaN/GaN HEMT by using the same device processes. Compar…
View article: Performance Comparison of GaN HEMTs on Diamond and SiC Substrates Based on Surface Potential Model
Performance Comparison of GaN HEMTs on Diamond and SiC Substrates Based on Surface Potential Model Open
In this paper, the performance difference of AlGaN/GaN high-electron mobility transistors (HEMTs) with same epitaxial structure fabricated silicon carbide (SiC) and transferred to diamond substrate is examined based on the surface-potentia…
View article: Characterization of CVD graphene permittivity and conductivity in micro-/millimeter wave frequency range
Characterization of CVD graphene permittivity and conductivity in micro-/millimeter wave frequency range Open
The permittivity and conductivity of chemical vapor deposited monolayer graphene are investigated up to 40 GHz. The characterization method is based on a coplanar waveguide transmission line structure that is fabricated on a multilayer sub…
View article: High‐Performance Monolayer WS<sub>2</sub> Field‐Effect Transistors on High‐κ Dielectrics
High‐Performance Monolayer WS<sub>2</sub> Field‐Effect Transistors on High‐κ Dielectrics Open
The combination of high-quality Al2 O3 dielectric and thiol chemistry passivation can effectively reduce the density of interface traps and Coulomb impurities, leading to a significant improvement of the mobility and a transition of the ch…