Chi‐Te Liang
YOU?
Author Swipe
View article: Modulating electronic transport properties of wafer-scale vapor–liquid–solid grown tungsten nitride by a vacuum gentle heating method
Modulating electronic transport properties of wafer-scale vapor–liquid–solid grown tungsten nitride by a vacuum gentle heating method Open
We study the electronic transport properties of W 5 N 6 by vacuum gentle heating methods, which are useful ways to probe the electronic transport properties in highly sensitive 2D materials. Importantly, we found stable nearest-neighbor ho…
View article: Graphene-based quantum Hall arrays in cross–square recursion configurations
Graphene-based quantum Hall arrays in cross–square recursion configurations Open
In electrical metrology, the quantum Hall effect is accessed at the Landau level filling factor ν = 2 plateau to define and disseminate the unit of electrical resistance (ohm). The robustness of the plateau is only exhibited at this Landau…
View article: On-Chip Quantum Sensing of Kondo Spins in a High-Mobility Quasi-One-Dimensional Nanoconstriction
On-Chip Quantum Sensing of Kondo Spins in a High-Mobility Quasi-One-Dimensional Nanoconstriction Open
The precise nature of Kondo spins has remained enigmatic when extended to multiple spin impurities or, more intriguingly, when the localized spin itself may already be the consequence of many-body interactions in a presumably delocalized o…
View article: Effect of capping on the Dirac semimetal Cd<sub>3</sub>As<sub>2</sub> on Si grown via molecular beam epitaxy
Effect of capping on the Dirac semimetal Cd<sub>3</sub>As<sub>2</sub> on Si grown via molecular beam epitaxy Open
Given the promising applications of large magnetoresistance in the Dirac semimetal cadmium arsenide (Cd 3 As 2 ), extensive research into Si-compatible Cd 3 As 2 devices is highly desirable. To prevent surface degradation and oxidation, th…
View article: Precision Limit for Observation: The Bridge for Quantum Classical Transitions
Precision Limit for Observation: The Bridge for Quantum Classical Transitions Open
Quantum mechanics (QM) is an extremely successful theory, however, there is still no consensus regarding its interpretation. Among the controversies, the quantum classical transitions are the outstanding questions. In this paper, starting …
View article: Revisiting the Identity Principle of Quantum Mechanics
Revisiting the Identity Principle of Quantum Mechanics Open
Identity principle is a fundamental postulate of quantum mechanics. In this paper, from a philosophical point of view, we revisit the identity principle of quantum mechanics. We attribute the identity to the existence of a precision limit …
View article: Unveiling the phases of bulk ZrTe<sub>5</sub> through magnetotransport phenomena
Unveiling the phases of bulk ZrTe<sub>5</sub> through magnetotransport phenomena Open
We present a straightforward method which may greatly simplify and lower the threshold for determining the phase of the relatively enigmatic quantum material—ZrTe 5 . In this study, without directly probing the band structure, we identify …
View article: Nanometer-thick molecular beam epitaxy Al films capped with <i>in situ</i> deposited Al2O3—High-crystallinity, morphology, and superconductivity
Nanometer-thick molecular beam epitaxy Al films capped with <i>in situ</i> deposited Al2O3—High-crystallinity, morphology, and superconductivity Open
Achieving high material perfection in aluminum (Al) films and their associated Al/AlOx heterostructures is essential for enhancing the coherence time in superconducting quantum circuits. We grew Al films with thicknesses ranging from 3 to …
View article: Chiral anomaly and Weyl orbit in three-dimensional Dirac semimetal Cd<sub>3</sub>As<sub>2</sub> grown on Si
Chiral anomaly and Weyl orbit in three-dimensional Dirac semimetal Cd<sub>3</sub>As<sub>2</sub> grown on Si Open
Preparing Cd 3 As 2 , which is a three-dimensional (3D) Dirac semimetal in certain crystal orientation, on Si is highly desirable as such a sample may well be fully compatible with existing Si CMOS technology. However, there is a dearth of…
View article: Recent progress in two-dimensional Nb2C MXene for applications in energy storage and conversion
Recent progress in two-dimensional Nb2C MXene for applications in energy storage and conversion Open
Two-dimensional niobium carbide (Nb2C), a member of the emerging MXene family, has recently garnered attention in various fields, including materials science, physics, chemistry, and nanotechnology. In this review, we highlight the materia…
View article: Doubling of the superconducting transition temperature in ultra-clean wafer-scale aluminum nanofilms
Doubling of the superconducting transition temperature in ultra-clean wafer-scale aluminum nanofilms Open
Superconducting properties of thin films can be vastly different from those of bulk materials. Seminal work has shown the critical temperature Tc of elemental superconductors decreases with decreasing film thickness when the normal-state s…
View article: Measuring epitaxial graphene nanoribbons with low-frequency alternating current
Measuring epitaxial graphene nanoribbons with low-frequency alternating current Open
We have demonstrated the fabrication of both armchair and zigzag epitaxial graphene nanoribbon (GNR) devices on 4H–SiC using a polymer-assisted sublimation growth method. The phenomenon of terrace step formation has traditionally introduce…
View article: Type III superconductivity
Type III superconductivity Open
Superconductivity remains one of most fascinating quantum phenomena existing on a macroscopic scale. Its rich phenomenology is usually described by the Ginzburg-Landau (GL) theory in terms of the order parameter, representing the macroscop…
View article: Type‐III Superconductivity
Type‐III Superconductivity Open
Superconductivity remains one of most fascinating quantum phenomena existing on a macroscopic scale. Its rich phenomenology is usually described by the Ginzburg–Landau (GL) theory in terms of the order parameter, representing the macroscop…
View article: Optical Signatures of Strain Differences in Epitaxial Graphene Nanoribbons
Optical Signatures of Strain Differences in Epitaxial Graphene Nanoribbons Open
We demonstrate the preparation of both armchair and zigzag epitaxial graphene nanoribbons (GNRs) on 4H-SiC using a polymer-assisted, sublimation growth method. Historically, the preparation of GNRs depended on the quality, or smoothness, o…
View article: A Review on Low-Dimensional Nanomaterials: Nanofabrication, Characterization and Applications
A Review on Low-Dimensional Nanomaterials: Nanofabrication, Characterization and Applications Open
The development of modern cutting-edge technology relies heavily on the huge success and advancement of nanotechnology, in which nanomaterials and nanostructures provide the indispensable material cornerstone. Owing to their nanoscale dime…
View article: Versatility of uniformly doped graphene quantum Hall arrays in series
Versatility of uniformly doped graphene quantum Hall arrays in series Open
In this work, the limiting factors for developing metrologically useful arrays from epitaxial graphene on SiC are lifted with a combination of centimeter-scale, high-quality material growth and the implementation of superconducting contact…
View article: Fabrication of uniformly doped graphene quantum Hall arrays with multiple quantized resistance outputs
Fabrication of uniformly doped graphene quantum Hall arrays with multiple quantized resistance outputs Open
In this work, limiting factors for developing metrologically useful arrays from epitaxial graphene on SiC are lifted with a combination of centimeter-scale, high-quality material growth and the implementation of superconducting contacts. S…
View article: Dynamics of transient hole doping in epitaxial graphene
Dynamics of transient hole doping in epitaxial graphene Open
This work reports the dynamics of transient hole doping in epitaxial graphene devices by using nitric acid as an adsorbent. The timescales associated with corresponding desorption processes are extracted from the data. The understanding of…
View article: Timescales for Nitric Acid Desorption in Epitaxial Graphene Devices
Timescales for Nitric Acid Desorption in Epitaxial Graphene Devices Open
This work reports the dynamics of transient hole doping in epitaxial graphene devices by using nitric acid as an adsorbent. The timescales associated with corresponding desorption processes are extracted from the data. The understanding of…
View article: Spectroscopic assessment of short-term nitric acid doping of epitaxial graphene
Spectroscopic assessment of short-term nitric acid doping of epitaxial graphene Open
This work reports information on the transience of hole doping in epitaxial graphene devices when nitric acid is used as an adsorbent. Under vacuum conditions, desorption processes are monitored by electrical and spectroscopic means to ext…
View article: Large-scale five- and seven-junction epitaxial graphene devices
Large-scale five- and seven-junction epitaxial graphene devices Open
The utilization of multiple current terminals on millimeter-scale graphene p-n junction devices has enabled the measurement of many atypical, fractional multiples of the quantized Hall resistance at the i=2 plateau. These fractions take th…