Terry Y.T. Hung
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View article: Top-Gated P-MOSFET with CVD-Grown WSe<sub>2</sub> Channels via Self-Aligned WO<sub><i>x</i></sub> Conversion for Spacer Doping
Top-Gated P-MOSFET with CVD-Grown WSe<sub>2</sub> Channels via Self-Aligned WO<sub><i>x</i></sub> Conversion for Spacer Doping Open
WOx conversion for doping is highlighted in recent advancements in WSe2 p-FETs. While past studies focused on exfoliated WSe2 flakes, our research examines CVD-grown WSe2 films, assessing the impact of this doping on channel mobility and c…
View article: Mobility Extraction in 2D Transition Metal Dichalcogenide Devices—Avoiding Contact Resistance Implicated Overestimation
Mobility Extraction in 2D Transition Metal Dichalcogenide Devices—Avoiding Contact Resistance Implicated Overestimation Open
Schottky barrier (SB) transistors operate distinctly different from conventional metal‐oxide semiconductor field‐effect transistors, in a unique way that the gate impacts the carrier injection from the metal source/drain contacts into the …
View article: Monolayer WSe2 induced giant enhancement in the spin Hall efficiency of Tantalum
Monolayer WSe2 induced giant enhancement in the spin Hall efficiency of Tantalum Open
Spin Orbit Torque Magnetic RAM (SOT-MRAM) is emerging as a promising memory technology owing to its high endurance, reliability and speed. A critical factor for its success is the development of materials that exhibit efficient conversion …
View article: Experimental observation of coupled valley and spin Hall effect in p‐doped WSe<sub>2</sub> devices
Experimental observation of coupled valley and spin Hall effect in p‐doped WSe<sub>2</sub> devices Open
It is generally accepted that perpendicular magnetic anisotropy (PMA) magnets are preferred over in‐plane magnetic anisotropy (IMA) magnets in data storage applications owing to their large thermal stability even at ultra‐scaled dimensions…
View article: Experimental observation of coupled valley and spin Hall effect in p-doped WSe2 devices
Experimental observation of coupled valley and spin Hall effect in p-doped WSe2 devices Open
Giant spin Hall effect (GSHE) has been observed in heavy metal materials such as Ta, Pt, and W, where spins are polarized in the surface plane and perpendicular to the charge current direction. Spins generated in these materials have succe…