Fred L. Terry
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View article: Spectral optical properties of Cu_2ZnSnS_4 thin film between 073 and 65 eV
Spectral optical properties of Cu_2ZnSnS_4 thin film between 073 and 65 eV Open
A polycrystalline Cu2ZnSnS4 thin film was deposited on fused quartz by co-evaporation. The selected thickness was ~100 nm to avoid artifacts in its optical properties caused by thicker as-grown films. The composition and phase of the film …
View article: GaAs-based surface-normal optical modulator compared to Si and its wavelength response characterization using a supercontinuum laser
GaAs-based surface-normal optical modulator compared to Si and its wavelength response characterization using a supercontinuum laser Open
A GaAs-based surface-normal optical modulator using the free-carrier effect is demonstrated for the first time to our knowledge. The device exhibits ~43% modulation depth compared to 24% for a previously demonstrated Si-based device with t…
View article: High resolution line scan interferometer for solder ball inspection using a visible supercontinuum source
High resolution line scan interferometer for solder ball inspection using a visible supercontinuum source Open
A line scan interferometer, which comprises a visible supercontinuum source coupled to Fourier domain Michelson interferometer, is used to obtain 3D images of ~300 μm high solder balls on a semiconductor die with 125 nm axial and 15 μm lat…
View article: Sensitive molecular binding assay using a photonic crystal structure in total internal reflection
Sensitive molecular binding assay using a photonic crystal structure in total internal reflection Open
A novel optical sensor for label-free biomolecular binding assay using a one-dimensional photonic crystal in a total-internal-reflection geometry is proposed and demonstrated. The simple configuration provides a narrow optical resonance to…
View article: Power adjustable visible supercontinuum generation using amplified nanosecond gains-witched laser diode
Power adjustable visible supercontinuum generation using amplified nanosecond gains-witched laser diode Open
Supercontinuum (SC) light with a continuous spectrum covering 0.45-1.2 microm is scaled from 250-740 mW by varying the repetition rate of an amplified, frequency doubled, telecom laser diode. Efficient SC generation requires minimal non-li…
View article: Immersion scatterometry for improved nano‐scale topography measurements
Immersion scatterometry for improved nano‐scale topography measurements Open
Spectroscopic ellipsometry measurement of periodic structures (“scatterometry”) has become a standard method for critical dimension and topography measurement in the integrated circuit industry. As dimensions are reduced, this method may n…
View article: A multi‐sensor study of Cl<sub>2</sub> etching of polycrystalline Si
A multi‐sensor study of Cl<sub>2</sub> etching of polycrystalline Si Open
Cl 2 chemistries are the basis for etching of polycrystalline Si and other conductive gate materials in Si CMOS integrated circuit fabrication. It is now well‐known that recombination of atomic Cl neutrals on the chamber walls influences t…
View article: Power scalable mid-infrared supercontinuum generation in ZBLAN fluoride fibers with up to 1.3 watts time-averaged power
Power scalable mid-infrared supercontinuum generation in ZBLAN fluoride fibers with up to 1.3 watts time-averaged power Open
Mid-infrared supercontinuum (SC) extending to ~4.0 mum is generated with 1.3 W time-averaged power, the highest power to our knowledge, in ZBLAN (ZrF(4)-BaF(2)-LaF(3)-AlF(3)-NaF...) fluoride fiber by using cladding-pumped fiber amplifiers …
View article: Third order cascaded Raman wavelength shifting in chalcogenide fibers and determination of Raman gain coefficient
Third order cascaded Raman wavelength shifting in chalcogenide fibers and determination of Raman gain coefficient Open
Cascaded Raman wavelength shifting up to three orders from 1553 nm to 1867 nm is demonstrated in As(2)S(3)-chalcogenide fibers. Due to a long zero dispersion wavelength for the sulfide fiber (>4.5 mum), pumping the fiber at 1553 nm results…
View article: Dual‐frequency‐selective surfaces for near‐infrared bandpass filters
Dual‐frequency‐selective surfaces for near‐infrared bandpass filters Open
A bandpass filter resonating at ∼1.4 μm and based on a dual‐frequency‐selective surface design is fabricated and characterized on a silicon substrate. The filter consists of square apertures arranged in a square lattice and separated by ma…
View article: Frequency‐selective surface based bandpass filters in the near‐infrared region
Frequency‐selective surface based bandpass filters in the near‐infrared region Open
A spatial bandpass filter resonant at 1.5 μm and based on a frequency‐selective surface (FSS) was analyzed and fabricated. It consists of circular apertures arranged in a hexagonal lattice and was modeled using a hybrid finite‐element/boun…
View article: <i>In situ</i>measurements of HCl during plasma etching of poly-silicon using a diode laser absorption sensor
<i>In situ</i>measurements of HCl during plasma etching of poly-silicon using a diode laser absorption sensor Open
Tunable diode laser absorption spectroscopy is used to monitor hydrogen chloride (HCl) concentration in a commercial, high-density, low-pressure plasma reactor during plasma etching. A near-infrared diode laser is used to scan the P(4) tra…
View article: Application of InAlAs/GaAs superlattice alloys to GaAs solar cells
Application of InAlAs/GaAs superlattice alloys to GaAs solar cells Open
AlGaAs/GaAs solar cells are typically characterized as having relatively high interface recombination velocities at the heteroface. This work examines some of the factors influencing the design of solar cell window layers and considers the…
View article: Normal-incidence spectroscopic ellipsometry for critical dimension monitoring
Normal-incidence spectroscopic ellipsometry for critical dimension monitoring Open
In this letter, we show that normal-incidence spectroscopic ellipsometry can be used for high-accuracy topography measurements on surface relief gratings. We present both experimental and theoretical results which show that spectroscopic e…
View article: Interference fringe-free transmission spectroscopy of amorphous thin films
Interference fringe-free transmission spectroscopy of amorphous thin films Open
Based on optical fundamentals, we present in this article a practical method to obtain an interference fringe-free transmission spectrum for hydrogenated amorphous solid thin films. From this spectrum, reliable optical properties, such as …
View article: Analysis of reflectometry and ellipsometry data from patterned structures
Analysis of reflectometry and ellipsometry data from patterned structures Open
Specular reflected light techniques, including both single wavelength and spectroscopic versions of ellipsometry and reflectometry, have been used for both etch and growth rate control. However, use of these techniques for process control …
View article: Wavelength Modulations Of The Kerr-Rotation Angle For Pd/(Pt/Co/Pt) Modulated Multilayers Grown On Oxidized Si
Wavelength Modulations Of The Kerr-Rotation Angle For Pd/(Pt/Co/Pt) Modulated Multilayers Grown On Oxidized Si Open
We present in this paper the effect of "oxidized-Si" surface layers of Si substrate en the optical, and magneto-optic properties of e-beam deposited Pd/(Pt/Co/Pt) modulated multilayer films. Large oscillations in the polar Kerr-rotation an…
View article: Erratum: ‘‘Evidence for field enhanced electron capture by EL2 centers in semi-insulating GaAs and the effect on GaAs radiation detectors’’ [J. Appl. Phys. <b>75</b>, 7910 (1994)]
Erratum: ‘‘Evidence for field enhanced electron capture by EL2 centers in semi-insulating GaAs and the effect on GaAs radiation detectors’’ [J. Appl. Phys. <b>75</b>, 7910 (1994)] Open
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View article: Evidence for field enhanced electron capture by EL2 centers in semi-insulating GaAs and the effect on GaAs radiation detectors
Evidence for field enhanced electron capture by EL2 centers in semi-insulating GaAs and the effect on GaAs radiation detectors Open
The performance of Schottky contact semiconductor radiation detectors fabricated from semi-insulating GaAs is highly sensitive to charged impurities and defects in the material. The observed behavior of semi-insulating GaAs Schottky barrie…
View article: Hydrogen sulfide plasma passivation of gallium arsenide
Hydrogen sulfide plasma passivation of gallium arsenide Open
Improvement in the electrical properties of the GaAs surface has been accomplished using a room-temperature hydrogen sulfide plasma. The surface has then been protected by a 300 °C plasma enhanced chemical vapor deposition (PECVD) SiO2 fil…
View article: A modified harmonic oscillator approximation scheme for the dielectric constants of Al<i>x</i>Ga1−<i>x</i>As
A modified harmonic oscillator approximation scheme for the dielectric constants of Al<i>x</i>Ga1−<i>x</i>As Open
The dielectric functions of AlxGa1−xAs have recently been measured for several Al mole fractions over the 1.5–6.0 eV wavelength range [D.E. Aspnes, S. M. Kelso, R. A. Logan, and R. Bhat, J. Appl. Phys. 60, 754 (1986)]. To make use of this …