Thomas Hantschel
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View article: Nanofabrication of sharp conductive diamond tip probe chips and their application in reverse tip sample scanning probe microscopy
Nanofabrication of sharp conductive diamond tip probe chips and their application in reverse tip sample scanning probe microscopy Open
Recently, a new scanning probe microscopy (SPM) concept called reverse tip sample scanning probe microscopy (RTS SPM) was introduced. Here, a sample is mounted at the end of a cantilever beam and scans over a tip that is integrated into an…
View article: Enabling focused ion beam sample preparation for application in reverse tip sample scanning probe microscopy
Enabling focused ion beam sample preparation for application in reverse tip sample scanning probe microscopy Open
Focused ion beam (FIB) has become a powerful tool for transmission electron microscopy sample preparation in the nanoelectronics industry and has in recent years also shown its benefits for specific preparation steps in electrical scanning…
View article: Probe chip nanofabrication enabled reverse tip sample scanning probe microscopy concept and measurements
Probe chip nanofabrication enabled reverse tip sample scanning probe microscopy concept and measurements Open
We introduce a new scanning probe microscopy (SPM) concept called reverse tip sample scanning probe microscopy (RTS SPM), where the tip and sample positions are reversed as compared to traditional SPM. The main benefit of RTS SPM over the …
View article: Design, Fabrication and Evaluation of Diamond Tip Chips for Reverse Tip Sample Scanning Probe Microscope Applications
Design, Fabrication and Evaluation of Diamond Tip Chips for Reverse Tip Sample Scanning Probe Microscope Applications Open
Scanning probe microscopy (SPM) has become an indispensable tool in efforts to develop the next generation of nanoelectronic devices, given its achievable nanometer spatial resolution and highly versatile ability to measure a variety of pr…
View article: Conductivity Enhancement in Transition Metal Dichalcogenides: A Complex Water Intercalation and Desorption Mechanism
Conductivity Enhancement in Transition Metal Dichalcogenides: A Complex Water Intercalation and Desorption Mechanism Open
The complexity of the water adsorption-desorption mechanism at the interface of transition metal dichalcogenides (TMDs) and its impact on their current transport are not yet fully understood. Here, our work investigates the swift intercala…
View article: Self-patterned ultra-sharp diamond tips and their application for advanced nanoelectronics device characterization by electrical SPM
Self-patterned ultra-sharp diamond tips and their application for advanced nanoelectronics device characterization by electrical SPM Open
The continuous downscaling of nanoelectronics devices requires metrology solutions with sub-nanometer spatial resolution. Electrical scanning probe microscopy (E-SPM) techniques such as scanning spreading resistance microscopy have become …
View article: Mineral Systems Modeling - Opportunities and Solutions to De-Risk Green- and Brownfield Exploration
Mineral Systems Modeling - Opportunities and Solutions to De-Risk Green- and Brownfield Exploration Open
Mineral systems analysis has become an established methodology in greenfield and brownfield exploration. Understanding the mineral system more holistically enables us to de-risk exploration investment decisions and to better predict the ec…
View article: Correlated Intrinsic Electrical and Chemical Properties of Epitaxial WS<sub>2</sub> via Combined C‐AFM and ToF‐SIMS Characterization
Correlated Intrinsic Electrical and Chemical Properties of Epitaxial WS<sub>2</sub> via Combined C‐AFM and ToF‐SIMS Characterization Open
Atomically thin, 2D semiconductors, such as transition metal dichalcogenides, complement silicon in ultra‐scaled nano‐electronic devices. However, the semiconductor and its interfaces become increasingly more difficult to characterize chem…
View article: Oil as an Enabler for Efficient Materials Removal in Three-Dimensional Scanning Probe Microscopy Applications
Oil as an Enabler for Efficient Materials Removal in Three-Dimensional Scanning Probe Microscopy Applications Open
The ever-increasing complexity of semiconductor devices requires innovative three-dimensional materials characterization techniques for confined volumes. Multiple atomic force microscopy (AFM)-based methodologies, using a slice-and-measure…
View article: Nano-Ridge Engineering of GaSb for the Integration of InAs/GaSb Heterostructures on 300 mm (001) Si
Nano-Ridge Engineering of GaSb for the Integration of InAs/GaSb Heterostructures on 300 mm (001) Si Open
Nano-ridge engineering (NRE) is a novel heteroepitaxial approach for the monolithic integration of lattice-mismatched III-V devices on Si substrates. It has been successfully applied to GaAs for the realization of nano-ridge (NR) laser dio…
View article: Silica gel solid nanocomposite electrolytes with interfacial conductivity promotion exceeding the bulk Li-ion conductivity of the ionic liquid electrolyte filler
Silica gel solid nanocomposite electrolytes with interfacial conductivity promotion exceeding the bulk Li-ion conductivity of the ionic liquid electrolyte filler Open
Li-ion conductivity increases with introduction of an interfacial ice layer in nano-SCE.
View article: Sample Orientation for Electron Channeling Contrast Imaging
Sample Orientation for Electron Channeling Contrast Imaging Open
Journal Article Sample Orientation for Electron Channeling Contrast Imaging Get access Tomáš Vystavěl, Tomáš Vystavěl Thermo Fisher Scientific, Vlastimila Pecha 12, 627 00 Brno, Czech Republic Search for other works by this author on: Oxfo…
View article: Laser-Induced Periodic Surface Structures (LIPSS) on Heavily Boron-Doped Diamond for Electrode Applications
Laser-Induced Periodic Surface Structures (LIPSS) on Heavily Boron-Doped Diamond for Electrode Applications Open
Diamond is known as a promising electrode material in the fields of cell stimulation, energy storage (e.g., supercapacitors), (bio)sensing, catalysis, etc. However, engineering its surface and electrochemical properties often requires cost…
View article: Anisotropic stress in narrow sGe fin field-effect transistor channels measured using nano-focused Raman spectroscopy
Anisotropic stress in narrow sGe fin field-effect transistor channels measured using nano-focused Raman spectroscopy Open
The continued importance of strain engineering in semiconductor technology demands fast and reliable stress metrology that is non-destructive and process line-compatible. Raman spectroscopy meets these requirements but the diffraction limi…
View article: Advanced Raman Spectroscopy Using Nanofocusing of Light
Advanced Raman Spectroscopy Using Nanofocusing of Light Open
Raman spectroscopy is uniquely sensitive to crucial material properties like stress and composition, but is inherently diffraction‐limited, impeding its application potential in nanostructured devices. Under correct polarization conditions…