Thomas Kaempfe
YOU?
Author Swipe
View article: Monolithic-3D Inference Engine with IGZO Based Ferroelectric Thin Film Transistor Synapses
Monolithic-3D Inference Engine with IGZO Based Ferroelectric Thin Film Transistor Synapses Open
Instigated by the plethora of data generated by edge devices and IoT devices, machine learning has become the de facto choice of everyone for solving many tasks. Applications such as intelligent healthcare monitoring systems, smart watche…
View article: Roadmap of Ferroelectric Memories: From Discovery to 3D Integration
Roadmap of Ferroelectric Memories: From Discovery to 3D Integration Open
The versatility of hafnium oxide-based ferroelectric memories to function as a storage class memory, a synaptic device for neuromorphic implementation, and a device capable of high-density integration have made them attractive candidates f…
View article: Roadmap of Ferroelectric Memories: From Discovery to 3D Integration
Roadmap of Ferroelectric Memories: From Discovery to 3D Integration Open
The versatility of hafnium oxide-based ferroelectric memories to function as a storage class memory, a synaptic device for neuromorphic implementation, and a device capable of high-density integration have made them attractive candidates f…
View article: Impact of Fringing Field on the Memory Window of FeFET
Impact of Fringing Field on the Memory Window of FeFET Open
In this study, ferroelectric field-effect-transistors (FeFETs) with nitride (SiON) interface having various gate lengths (LG) and gate widths (WG) were investigated to study the influence of gate dimensions on the memory window (MW) and en…
View article: Impact of Fringing Field on the Memory Window of FeFET
Impact of Fringing Field on the Memory Window of FeFET Open
In this study, ferroelectric field-effect-transistors (FeFETs) with nitride (SiON) interface having various gate lengths (LG) and gate widths (WG) were investigated to study the influence of gate dimensions on the memory window (MW) and en…
View article: Design of Variation-Tolerant 1F-1T Memory Array for Neuromorphic Computing
Design of Variation-Tolerant 1F-1T Memory Array for Neuromorphic Computing Open
This letter proposes a memory cell, denoted by 1F-1T, consisting of a ferroelectric field-effect transistor (Fe-FET) cascoded with another current-limiting transistor (T). The transistor reduces the impact of drain current (Id) variations …
View article: Design of Variation-Tolerant 1F-1T Memory Array for Neuromorphic Computing
Design of Variation-Tolerant 1F-1T Memory Array for Neuromorphic Computing Open
This letter proposes a memory cell, denoted by 1F-1T, consisting of a ferroelectric field-effect transistor (Fe-FET) cascoded with another current-limiting transistor (T). The transistor reduces the impact of drain current (Id) variations …
View article: Neuromorphic Computing with 28nm High-K-Metal Gate Ferroelectric Field Effect Transistors Based Artificial Synapses
Neuromorphic Computing with 28nm High-K-Metal Gate Ferroelectric Field Effect Transistors Based Artificial Synapses Open
This paper presents a comprehensive overview of 28 nm high-k-metal gate-based ferroelectric field effect transistor devices for synaptic applications. The device under test was fabricated on 300mm wafers at GlobalFoundries. The fabricated …
View article: Neuromorphic Computing with 28nm High-K-Metal Gate Ferroelectric Field Effect Transistors Based Artificial Synapses
Neuromorphic Computing with 28nm High-K-Metal Gate Ferroelectric Field Effect Transistors Based Artificial Synapses Open
This paper presents a comprehensive overview of 28 nm high-k-metal gate-based ferroelectric field effect transistor devices for synaptic applications. The device under test was fabricated on 300mm wafers at GlobalFoundries. The fabricated …
View article: 28nm High-K-Metal Gate Ferroelectric Field Effect Transistors Based Artificial Synapses
28nm High-K-Metal Gate Ferroelectric Field Effect Transistors Based Artificial Synapses Open
This paper presents 28 nm high-k-metal gate (HKMG) based ferroelectric field effect transistor (FeFET) devices fabricated on 300mm wafers at GlobalFoundries’. The fabricated devices demonstrate 103 WRITE-endurance cycles and 104 seconds of…
View article: Roadmap for Ferroelectric Memory: Challenges and Opportunities for IMC Applications
Roadmap for Ferroelectric Memory: Challenges and Opportunities for IMC Applications Open
CMOS compatibility and the low process temperature of hafnium oxide(HfO2) make HfO2-based ferroelectric FETs an excellent candidate for logic, memory, and neuromorphic devices. This article discusses the challenges and opportunities of usi…
View article: Roadmap for Ferroelectric Memory: Challenges and Opportunities for IMC Applications
Roadmap for Ferroelectric Memory: Challenges and Opportunities for IMC Applications Open
CMOS compatibility and the low process temperature of hafnium oxide(HfO2) make HfO2-based ferroelectric FETs an excellent candidate for logic, memory, and neuromorphic devices. This article discusses the challenges and opportunities of usi…
View article: Monolithic-3D Inference Engine with IGZO Based Ferroelectric Thin Film Transistor Synapses
Monolithic-3D Inference Engine with IGZO Based Ferroelectric Thin Film Transistor Synapses Open
Instigated by the plethora of data generated by edge devices and IoT devices, machine learning has become the de facto choice of everyone for solving many tasks. Applications such as intelligent healthcare monitoring systems, smart watche…
View article: Monolithic-3D Inference Engine with IGZO Based Ferroelectric Thin Film Transistor Synapses
Monolithic-3D Inference Engine with IGZO Based Ferroelectric Thin Film Transistor Synapses Open
Instigated by the plethora of data generated by edge devices and IoT devices, machine learning has become the de facto choice of everyone for solving many tasks. Applications such as intelligent healthcare monitoring systems, smart watche…