Thomas Ortlepp
YOU?
Author Swipe
View article: PowderMEMS® magnets as enabler for miniaturized NV based quantum sensors and quantum processor architectures
PowderMEMS® magnets as enabler for miniaturized NV based quantum sensors and quantum processor architectures Open
The implementation of PowderMEMS® micromagnets of varying shapes, with lateral dimensions of 700 μm and 800 μm, into 2.3 × 2.3 × 0.525 mm3 silicon chips has been demonstrated successfully. These chips have been utilized as functionalized i…
View article: Making Use of Low‐Cost High‐Pressure–High‐Temperature‐Diamond Materials for Industry‐Type Quantum Sensor Device Applications
Making Use of Low‐Cost High‐Pressure–High‐Temperature‐Diamond Materials for Industry‐Type Quantum Sensor Device Applications Open
A cost‐effective approach to provide diamond platelets containing nitrogen vacancy center ensembles (NVs) in the range of ppm is investigated. Industry‐type high‐pressure–high‐temperature‐diamond type 1b containing a high number of interst…
View article: Effect of inelastic ion collisions on low-gain avalanche detectors explained by an ASi-Si -defect mode
Effect of inelastic ion collisions on low-gain avalanche detectors explained by an ASi-Si -defect mode Open
The acceptor removal phenomenon (ARP), which hampers the functionality of low-gain avalanche detectors (LGAD), is discussed in frame of the ASi-Sii-defect model. The assumption of fast diffusion of interstitial silicon is shown to be super…
View article: Investigation of Tl‐Doped Silicon by Low‐Temperature Photoluminescence during Light‐Induced Degradation Treatments
Investigation of Tl‐Doped Silicon by Low‐Temperature Photoluminescence during Light‐Induced Degradation Treatments Open
Scientific progress is made in understanding photoluminescence (PL) lines in thallium‐doped silicon. Two PL lines called A and P, which appear after quenching, are found to exhibit irreversible as well as reversible behavior under the appl…
View article: Innovative Silicon-Ceramic (SiCer) Technology for High-Strength Pressure Sensor Applications Using Different Manufacturing Methods
Innovative Silicon-Ceramic (SiCer) Technology for High-Strength Pressure Sensor Applications Using Different Manufacturing Methods Open
A variety of manufacturing methods can be used to assemble silicon-based piezoresistive pressure sensors, such as anodic bonding or silicon direct bonding. To achieve highstrength pressure sensors, a high quality interface connection is re…
View article: Modeling, properties, and fabrication of a micromachined thermoelectric generator
Modeling, properties, and fabrication of a micromachined thermoelectric generator Open
Different electrical and thermoelectric properties of a Si-based thermoelectric generator (TEG) are described based on the Kubo–Greenwood formalism. Temperature and doping dependence, phonon scattering (acoustic and optical phonons), and s…
View article: Effect of inelastic ion collisions on low-gain avalanche detectors explained by an A_Si-Si_i-defect mode
Effect of inelastic ion collisions on low-gain avalanche detectors explained by an A_Si-Si_i-defect mode Open
The acceptor removal phenomenon (ARP), which hampers the functionality of low-gain avalanche detectors (LGAD), is discussed in frame of the A_Si-Si_i-defect model. The assumption of fast diffusion of interstitial silicon is shown to be sup…
View article: Pressure Sensor Devices Featuring a Chemical Passivation Made of a Locally Synthesized Diamond Layer
Pressure Sensor Devices Featuring a Chemical Passivation Made of a Locally Synthesized Diamond Layer Open
The rear side of a pressure sensor diaphragm is prepared with an additional diamond layer as protective coating against harsh media. The preparation sequence for the diamond coating is developed as a simple backend process, combining only …
View article: Compact All‐Optical Quantum Sensor Device Based on Nitrogen Vacancy Centers in Diamond
Compact All‐Optical Quantum Sensor Device Based on Nitrogen Vacancy Centers in Diamond Open
An integrated magnetic sensor is designed and tested that utilizes the negatively charged nitrogen vacancy centers (NVC) in diamond as a magnetic field‐sensitive quantum material, which is accessed and readout solely optically. The compact…
View article: The<i>A</i><sub>Si</sub>–Si<sub><i>i</i></sub>Defect Model of Light‐Induced Degradation (LID) in Silicon: A Discussion and Review
The<i>A</i><sub>Si</sub>–Si<sub><i>i</i></sub>Defect Model of Light‐Induced Degradation (LID) in Silicon: A Discussion and Review Open
The A Si –Si i defect model as one possible explanation for light‐induced degradation (LID) in typically boron‐doped silicon solar cells, detectors, and related systems is discussed and reviewed. Starting from the basic experiments which l…
View article: Development of Low‐Gain Avalanche Detectors in the Frame of the Acceptor Removal Phenomenon
Development of Low‐Gain Avalanche Detectors in the Frame of the Acceptor Removal Phenomenon Open
Low‐gain avalanche detectors (LGAD) suffer from an acceptor removal phenomenon due to irradiation. This acceptor removal phenomenon is investigated in boron, gallium, and indium implanted samples by 4‐point‐probe (4pp) measurements, low‐te…
View article: Spectrally pure far-UVC emission from AlGaN-based LEDs with dielectric band pass filters
Spectrally pure far-UVC emission from AlGaN-based LEDs with dielectric band pass filters Open
AlGaN-based far ultraviolet-C (UVC) light emitting diodes (LEDs) with a peak emission wavelength below 240 nm typically show a long-wavelength tail at >240 nm that is detrimental to the use of the devices for skin-friendly antisepsis. We p…
View article: Determination of piezo-resistive coefficient <i>π</i><sub>44</sub> in <i>p</i>-type silicon by comparing simulation and measurement of pressure sensors
Determination of piezo-resistive coefficient <i>π</i><sub>44</sub> in <i>p</i>-type silicon by comparing simulation and measurement of pressure sensors Open
The piezo-resistive coefficient π44 is reported for the case of single crystalline p-type silicon. By comparing the measured sensitivity of pressure sensors with the simulated sensitivity of these pressure sensors, we are able to extract π…
View article: Carrier Mobility in Semiconductors at Very Low Temperatures
Carrier Mobility in Semiconductors at Very Low Temperatures Open
Carrier mobilities and concentrations were measured for different p- and n-type silicon materials in the temperature range 0.3–300 K. Simulations show that experimentally determined carrier mobilities are best described in this temperature…
View article: Monitoring of Ammonia in Biogas
Monitoring of Ammonia in Biogas Open
Ammonia content is an important factor, which has to be considered when optimizing the processes in a biogas plant. A measurement system for a continuous monitoring of ammonia has been constructed, which can be placed in the gas room above…
View article: First measurements with a radiation hard relative humidity sensor for the ATLAS Experiment
First measurements with a radiation hard relative humidity sensor for the ATLAS Experiment Open
A radiation hard humidity sensor, based on an inter-digital structure is developed for the upgrade of the Large Hadron Collider (LHC) to high-luminosity LHC (HL-LHC). In this context, the interior of the detector of the ATLAS Experiment wi…
View article: MULTISENSORS FOR WHOLE-CELL ANALYTICS
MULTISENSORS FOR WHOLE-CELL ANALYTICS Open
Whole-cell biosensors, which can be used in the environmental protection and process measuring technology, in the biotechnology, food and pharmaceutical industry for the on-line control and monitoring of chemical and biochemical processes …
View article: A nanocryotron comparator can connect single-flux-quantum circuits to conventional electronics
A nanocryotron comparator can connect single-flux-quantum circuits to conventional electronics Open
Integration with conventional electronics offers a straightforward and\neconomical approach to upgrading existing superconducting technologies, such as\nscaling up superconducting detectors into large arrays and combining single\nflux quan…
View article: P2.5 - Reliability and long-term stability of the mounted silicon for precision measurements
P2.5 - Reliability and long-term stability of the mounted silicon for precision measurements Open
Silicon strain gauges have a much higher gauge factor than metal foil strips.These can replace piezoresistive thin-film resistors and thus create a cost-effective and high-quality sensor.The technical challenge lies in the long-term stable…