The implementation of PowderMEMS® micromagnets of varying shapes, with lateral dimensions of 700 μm and 800 μm, into 2.3 × 2.3 × 0.525 mm3 silicon chips has been demonstrated successfully. These chips have been utilized as functionalized interposer for micro-scaled quantum devices. PowderMEMS® micromagnets offer a high biasing magnetic field flux density ranging from 30 mT to 35 mT over a distance of 100 μm depending on the size and shape of the micromagnets. This magnetic field strength (BZ) was proven by room te…

A cost‐effective approach to provide diamond platelets containing nitrogen vacancy center ensembles (NVs) in the range of ppm is investigated. Industry‐type high‐pressure–high‐temperature‐diamond type 1b containing a high number of interstitial nitrogen in the range of several tens of ppm are used and small diamond platelets (size ≈1 × 1 mm 2 , thickness ≈300 μm) are prepared by laser cutting and polishing. The nitrogen is converted into NV by means of high‐energy electron irradiation of 10 MeV and annealing at 90…

The acceptor removal phenomenon (ARP), which hampers the functionality of low-gain avalanche detectors (LGAD), is discussed in frame of the ASi-Sii-defect model. The assumption of fast diffusion of interstitial silicon is shown to be superfluous for the explanation of the BSi-Sii-defect formation under irradiation, particular at very low temperatures. The experimentally observed properties of the ARP are explained by the donor properties of the BSi-Sii-defect in its ground state. Additionally, low temperature phot…

Scientific progress is made in understanding photoluminescence (PL) lines in thallium‐doped silicon. Two PL lines called A and P, which appear after quenching, are found to exhibit irreversible as well as reversible behavior under the application of light‐induced degradation (LID) treatments. The reversible behavior is similar to changes of a P line in indium‐doped silicon due to LID treatments, which have led to the identification of this P line to be caused by an In Si ‐Si i ‐defect. By exploiting the metastabil…

A variety of manufacturing methods can be used to assemble silicon-based piezoresistive pressure sensors, such as anodic bonding or silicon direct bonding. To achieve highstrength pressure sensors, a high quality interface connection is required. The combination of silicon and ceramic creates a new innovative composite system known as Silicon-on-Ceramics, short SiCer. By using a special developed bondable Low Temperature Co-fired Ceramic tape, which corresponds to the thermal expansion coefficient of Si, the combi…