Thomas Schumann
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View article: Fine-tuning of plasmonics by Au@AuY/Au core–shell nanoparticle monolayer for enhancement of third-order nonlinearity
Fine-tuning of plasmonics by Au@AuY/Au core–shell nanoparticle monolayer for enhancement of third-order nonlinearity Open
The manipulation of plasmonics on noble metal nanoparticles (NPs) is of great interest in developing nonlinear photonic devices, such as all-optical switches and frequency combs. An [email protected]/Au-shell nanoparticle ([email protected…
View article: Observation of spin Nernst photocurrents in topological insulators
Observation of spin Nernst photocurrents in topological insulators Open
The theoretical prediction of topological insulators in 2007 triggered tremendous interest. They are of fundamental interest because of their topological twist in k-space, which comes along with unidirectional, spin-polarized surface-state…
View article: Pumping laser excited spins through MgO barriers
Pumping laser excited spins through MgO barriers Open
We present a study of the tunnel magneto-Seebeck (TMS) effect in MgO based magnetic tunnel junctions (MTJs). The electrodes consist of CoFeB with in-plane magnetic anisotropy. The temperature gradients which generate a voltage across the M…
View article: Ultrafast photocurrents at the surface of the three-dimensional topological insulator Bi2Se3
Ultrafast photocurrents at the surface of the three-dimensional topological insulator Bi2Se3 Open
Three-dimensional topological insulators are fascinating materials with insulating bulk yet metallic surfaces that host highly mobile charge carriers with locked spin and momentum. Remarkably, surface currents with tunable direction and ma…
View article: Ultrafast shift photocurrents at the surface of the three-dimensional topological insulator $Bi_2Se_3$
Ultrafast shift photocurrents at the surface of the three-dimensional topological insulator $Bi_2Se_3$ Open
Topological insulators constitute a new and fascinating class of matter with insulating bulk yet metallic surfaces that host highly mobile charge carriers with spin-momentum locking. Remarkably, the direction and magnitude of surface curre…
View article: Formation of shallow boron emitters in crystalline silicon using flash lamp annealing: Role of excess silicon interstitials
Formation of shallow boron emitters in crystalline silicon using flash lamp annealing: Role of excess silicon interstitials Open
Shallow, Boron (B)-doped p+ emitters have been realized using spin-on deposition and Flash Lamp Annealing (FLA) to diffuse B into monocrystalline float zone Silicon (Si). The emitters extend between 50 and 140 nm in depth below the surface…