Timo Rahkonen
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View article: Linearization Techniques for Bipolar Transistor Transconductance Stage
Linearization Techniques for Bipolar Transistor Transconductance Stage Open
Conventional BJT differential pairs have a relatively small input voltage dynamic range. This paper reviews and compares several linearization techniques, which are used to expand the input transconductance (gm) stage’s dynamic range. Two …
View article: A 300-GHz Band Sliding-IF I/Q Receiver Front-End in 130-nm SiGe Technology
A 300-GHz Band Sliding-IF I/Q Receiver Front-End in 130-nm SiGe Technology Open
This work presents a sliding-IF mixer-first IQ receiver front-end, in 130 nm SiGe BiCMOS technology with of 300 GHz/450 GHz, operating in 300 GHz band. For near- operation, the sliding-IF architecture eliminates the need for the local osc…
View article: Using Analog Complex Mixers for Low-IF Mixing
Using Analog Complex Mixers for Low-IF Mixing Open
IQ mixers and complex mixers are both used to cancel the image band signal.In this paper, we analyse a complex IF sub-THz receiver architecture aimed for splitting a multiGHz baseband signal into narrower sub-bands for easier A/D conversio…
View article: Ka-band stacked and pseudo-differential orthogonal load-modulated balanced power amplifier in 22 nm CMOS FDSOI
Ka-band stacked and pseudo-differential orthogonal load-modulated balanced power amplifier in 22 nm CMOS FDSOI Open
This paper presents an integrated power amplifier (PA) following the orthogonal load-modulated balanced amplifier (OLMBA) topology. The fixed-phase prototype in this paper is implemented with 22 nm complementary metal oxide semiconductor (…
View article: A Wideband If Receiver Chip for Flexibly Scalable mmWave Subarray Combining and Interference Rejection
A Wideband If Receiver Chip for Flexibly Scalable mmWave Subarray Combining and Interference Rejection Open
Large-scale multi-beam phased array systems suffer from inter-beam interference that should be canceled either in the analog or digital domain. In wideband systems such as fifth generation (5G), interference rejection over a wide bandwidth…
View article: Chip-to-Chip Interfaces for Large-Scale Highly Configurable mmWave Phased Arrays
Chip-to-Chip Interfaces for Large-Scale Highly Configurable mmWave Phased Arrays Open
This article presents a chip-to-chip (C2C) interface for constructing reconfigurable phased arrays to be used in fifth-generation (5G)/sixth-generation (6G) wireless systems.The C2C interface further facilitates building phased array panel…
View article: Design Aspects of Single-Ended and Differential SiGe Low-Noise Amplifiers Operating Above f<sub>max</sub>/2in Sub-THz/THz Frequencies
Design Aspects of Single-Ended and Differential SiGe Low-Noise Amplifiers Operating Above f<sub>max</sub>/2in Sub-THz/THz Frequencies Open
This article presents a single-stage single-ended (SE) and a multistage pseudo-differential cascode low-noise amplifiers (D-LNA) with their center frequencies at 235 and 290 GHz, respectively. Both low-noise amplifiers (LNAs) are designed …
View article: Analysis and Design of Capacitive Voltage Distribution Stacked MOS Millimeter-Wave Power Amplifiers
Analysis and Design of Capacitive Voltage Distribution Stacked MOS Millimeter-Wave Power Amplifiers Open
Stacked MOS power amplifiers (PA) are commonly used in SOI nodes but also have the potential to be realized in bulk CMOS nodes.In this paper they are analyzed in millimeter wave regimes.The study focuses on the key limiting factors and in …
View article: Predistortion-Based Linearization for 5G and Beyond Millimeter-Wave Transceiver Systems: A Comprehensive Survey
Predistortion-Based Linearization for 5G and Beyond Millimeter-Wave Transceiver Systems: A Comprehensive Survey Open
The next-generation (5G/6G) wireless communication aims to leapfrog the currently occupied sub-6 GHz spectrum to the wideband millimeter-wave (MMW) spectrum. However, MMW spectrums with high-order modulation schemes drive the power amplifi…
View article: A 38.5-to-60.5 GHz LNA with Wideband Combiner Supporting Cartesian Beamforming Architecture
A 38.5-to-60.5 GHz LNA with Wideband Combiner Supporting Cartesian Beamforming Architecture Open
Funding Information: ACKNOWLEDGMENT This research has been financially supported by Academy of Finland Ex5GRx (grant 2430226211) and also in part 6Genesis Flagship (grant 318927). Publisher Copyright: © 2021 IEEE.
View article: Origins and minimization of intermodulation distortion in a pseudo-differential CMOS beamforming receiver
Origins and minimization of intermodulation distortion in a pseudo-differential CMOS beamforming receiver Open
This paper studies how nonlinear distortion is generated in the combination of an inverter-based low-noise amplifier and a passive mixer. The dominant nonlinearity appears to be the quadratic $$V_{gs}V_{ds}$$ mixing term in the p…
View article: Ka-Band Stacked Power Amplifier Supporting 3GPP New Radio FR2 Band n258 Implemented Using 45 nm CMOS SOI
Ka-Band Stacked Power Amplifier Supporting 3GPP New Radio FR2 Band n258 Implemented Using 45 nm CMOS SOI Open
This paper presents a fully integrated, four-stack, single-ended, single stage power amplifier (PA) for millimeter-wave (mmWave) wireless applications that was fabricated and designed using 45 nm complementary metal oxide semiconductor sil…
View article: Combined Sidelobe Reduction and Omnidirectional Linearization of Phased Array by Using Tapered Power Amplifier Biasing and Digital Predistortion
Combined Sidelobe Reduction and Omnidirectional Linearization of Phased Array by Using Tapered Power Amplifier Biasing and Digital Predistortion Open
Power amplifier (PA) efficiency and linearity are among the key drivers to reduce energy consumption while enabling high data rates in the fifth-generation (5G) millimeter-wave phased array transmitters. Analog per-branch phase and amplitu…
View article: A 290 GHz Low Noise Amplifier Operating above $f_{max}/2$ in 130 nm SiGe Technology for Sub-THz/THz Receivers
A 290 GHz Low Noise Amplifier Operating above $f_{max}/2$ in 130 nm SiGe Technology for Sub-THz/THz Receivers Open
This paper presents the design of a low noise amplifier (LNA) operating at center frequency 290 GHz in 130 nm SiGe BiCMOS technology with $f_{t}/f_{max}$ of 300 GHz/450 GHz. The LNA consists of four stages of pseudo-differential cascode to…
View article: Ka-band time-domain multiplexing front-end with minimum switch area utilization on 22 nm fully depleted silicon-on-insulator CMOS technology
Ka-band time-domain multiplexing front-end with minimum switch area utilization on 22 nm fully depleted silicon-on-insulator CMOS technology Open
A time-domain duplexing radio frequency (RF) front-end with integrated antenna switch, power amplifier (PA), and low noise amplifier (LNA) was developed aiming for fifth-generation communication (5G) applications covering 24–28 GHz frequen…
View article: Design of a 40 GHz low noise amplifier using multigate technique for cascode devices
Design of a 40 GHz low noise amplifier using multigate technique for cascode devices Open
Increased parasitic components in silicon-based nanometer (nm) scale active devices have various performance trade-offs between optimizing the key parameters, for example, maximum frequency of oscillation ( $$f_{max}$$ , gate resistan…
View article: A Wideband IF Receiver Module for Flexibly Scalable mmWave Beamforming Combining and Interference Cancellation
A Wideband IF Receiver Module for Flexibly Scalable mmWave Beamforming Combining and Interference Cancellation Open
Large-scale phased arrays need to combine weighted signals from multiple sub-arrays either in analog or in digital domain. Sub-arrays are preferably implemented modularly with integrated circuits placed next to the associated antennas. In …
View article: A Reconfigurable Dual-Mode Tracking SAR ADC without Analog Subtraction
A Reconfigurable Dual-Mode Tracking SAR ADC without Analog Subtraction Open
In this contribution, it is proposes to limit the quantization search space of a successive approximation analog-to-digital converter through an analytic derivation of maximum possible sample-to-sample variation. The presented example desi…
View article: Continuously controlled and discrete-level charge pumping techniques implemented in SC integrators
Continuously controlled and discrete-level charge pumping techniques implemented in SC integrators Open
This paper presents two methods to reduce power consumption of switched capacitor (SC) integrators in sigma-delta analog to digital converters. The proposed two methods are based on the passive charge re-distribution technique, injecting c…
View article: Design and measurement of a 5G mmW mobile backhaul transceiver at 28 GHz
Design and measurement of a 5G mmW mobile backhaul transceiver at 28 GHz Open
High throughput and ultra low latency are the main requirements for fifth generation (5G) mobile broadband communications. Densely populated urban environments require utilization of previously underutilized millimeter wave frequency spect…