Timothy J. Coutts
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View article: Ipilimumab with temozolomide vs. temozolomide alone after surgery and chemoradiotherapy in recently diagnosed glioblastoma: a randomized phase II clinical trial
Ipilimumab with temozolomide vs. temozolomide alone after surgery and chemoradiotherapy in recently diagnosed glioblastoma: a randomized phase II clinical trial Open
Background Glioblastoma confers a bleak prognosis, with median survival of less than a year. This trial evaluated whether addition of the CTLA-4 immune checkpoint inhibitor ipilimumab to standard therapy improves survival in patients with …
View article: Thin transparent conducting films of cadmium stannate
Thin transparent conducting films of cadmium stannate Open
A process for preparing thin Cd.sub.2 SnO.sub.4 films. The process comprises the steps of RF sputter coating a Cd.sub.2 SnO.sub.4 layer onto a first substrate; coating a second substrate with a CdS layer; contacting the Cd.sub.2 SnO.sub.4 …
View article: High quality transparent conducting oxide thin films
High quality transparent conducting oxide thin films Open
A transparent conducting oxide (TCO) film comprising: a TCO layer, and dopants selected from the elements consisting of Vanadium, Molybdenum, Tantalum, Niobium, Antimony, Titanium, Zirconium, and Hafnium, wherein the elements are n-type do…
View article: Photovoltaic devices comprising cadmium stannate transparent conducting films and method for making
Photovoltaic devices comprising cadmium stannate transparent conducting films and method for making Open
A photovoltaic device having a substrate, a layer of Cd.sub.2 SnO.sub.4 disposed on said substrate as a front contact, a thin film comprising two or more layers of semiconductor materials disposed on said layer of Cd.sub.2 SnO.sub.4, and a…
View article: Photovoltaic devices comprising zinc stannate buffer layer and method for making
Photovoltaic devices comprising zinc stannate buffer layer and method for making Open
A photovoltaic device has a buffer layer zinc stannate Zn.sub.2 SnO.sub.4 disposed between the semiconductor junction structure and the transparent conducting oxide (TCO) layer to prevent formation of localized junctions with the TCO throu…
View article: Method for producing high carrier concentration p-Type transparent conducting oxides
Method for producing high carrier concentration p-Type transparent conducting oxides Open
A method for producing transparent p-type conducting oxide films without co-doping plasma enhancement or high temperature comprising: a) introducing a dialkyl metal at ambient temperature and a saturated pressure in a carrier gas into a lo…
View article: Transparent conducting oxides and production thereof
Transparent conducting oxides and production thereof Open
Transparent conducting oxides and production thereof are disclosed. An exemplary method of producing a transparent conducting oxide (TCO) material may comprise: providing a TCO target doped with either a high-permittivity oxide or a low-pe…
View article: Zero added oxygen for high quality sputtered ITO: A data science investigation of reduced Sn-content and added Zr
Zero added oxygen for high quality sputtered ITO: A data science investigation of reduced Sn-content and added Zr Open
The authors demonstrate mobilities of >45 cm2/V s for sputtered tin-doped indium oxide (ITO) films at zero added oxygen. All films were deposited with 5 wt. % SnO2, instead of the more conventional 8–10 wt. %, and had varying ZrO2 conte…