Tiwei Chen
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View article: Enhancement-mode Ga<sub>2</sub>O<sub>3</sub> FETs with an unintentionally doped (001) <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> channel layer grown by metal-organic chemical vapor deposition
Enhancement-mode Ga<sub>2</sub>O<sub>3</sub> FETs with an unintentionally doped (001) <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> channel layer grown by metal-organic chemical vapor deposition Open
High-quality unintentionally doped (UID) (001) β -Ga 2 O 3 homoepitaxial films were grown on native substrates through metalorganic CVD. The surface parallel grooves were repaired under low temperature and pressure conditions, reaching the…
View article: Ultrahigh Responsivity In2O3 UVA Photodetector through Modulation of Trimethylindium Flow Rate
Ultrahigh Responsivity In2O3 UVA Photodetector through Modulation of Trimethylindium Flow Rate Open
Oxygen vacancies (Vo) can significantly degrade the electrical properties of indium oxide (In2O3) thin films, thus limiting their application in the field of ultraviolet detection. In this work, the Vo is effectively suppressed by adjustin…
View article: Application of ZnO/WO3 Composite Nanofiber Photocatalysts in Textile Wastewater Treatment
Application of ZnO/WO3 Composite Nanofiber Photocatalysts in Textile Wastewater Treatment Open
Semiconductor photocatalysis technology is an environmentally friendly and efficient emerging technology. This method can use sunlight as a driving force to quickly decompose organic pollutants in water bodies. Zinc oxide (ZnO) and tungste…
View article: Highly Reliable Temperature Sensor Based on p-GaN/AlGaN/GaN Hybrid Anode Diode with Wide Operation Temperature from 73 K to 573 K
Highly Reliable Temperature Sensor Based on p-GaN/AlGaN/GaN Hybrid Anode Diode with Wide Operation Temperature from 73 K to 573 K Open
A high-performance temperature sensor based on a p-GaN/AlGaN/GaN hybrid anode diode (HPT-HAD) fabricated by hydrogen plasma treatment is demonstrated. The sensor exhibits accurate and stable temperature responses from 73 to 573 K. The forw…
View article: Development of nanostructured based ZnO@WO3 photocatalyst and its photocatalytic and electrochemical properties: Degradation of Rhodamine B
Development of nanostructured based ZnO@WO3 photocatalyst and its photocatalytic and electrochemical properties: Degradation of Rhodamine B Open
The current study focused on the hydrothermal synthesis of ZnO@WO3 nanocomposite with Zn/W mole ratios of 1:1, 5:1, and 6:1, and labeled as ZnO@WO3 (1:1), ZnO@WO3 (5:1), and ZnO@WO6:1, respectively, as heterostructure photocatalyst for Rho…
View article: Effect of RF power and gas ratio on the sidewall of β-Ga<sub>2</sub>O<sub>3</sub> films via inductively coupled plasma etching
Effect of RF power and gas ratio on the sidewall of β-Ga<sub>2</sub>O<sub>3</sub> films via inductively coupled plasma etching Open
The beveled mesa structure of β -Ga 2 O 3 has attracted wide attention because it can significantly weaken the peak electric field and increase the breakdown voltage. In this study, β -Ga 2 O 3 beveled mesa has been modulated via inductive…
View article: Ultraviolet photodetector based on vertical β-Ga<sub>2</sub>O<sub>3</sub> nanowire array on GaN substrate
Ultraviolet photodetector based on vertical β-Ga<sub>2</sub>O<sub>3</sub> nanowire array on GaN substrate Open
Driven by the requirement to ultraviolet detection, β -Ga 2 O 3 UV photodetectors have attracted great attention. Using a metal organic chemical vapor deposition (MOCVD) reactor, we grew β -Ga 2 O 3 nanowires array on a GaN substrate using…
View article: Self‐Powered and Spectrally Distinctive Nanoporous Ga<sub>2</sub>O<sub>3</sub>/GaN Epitaxial Heterojunction UV Photodetectors
Self‐Powered and Spectrally Distinctive Nanoporous Ga<sub>2</sub>O<sub>3</sub>/GaN Epitaxial Heterojunction UV Photodetectors Open
Herein, self‐powered spectrally distinctive UV photodetectors (PDs) based on nanoporous epitaxial Ga 2 O 3 /GaN heterojunctions grown by metalorganic chemical vapor deposition (MOCVD) are reported. The nanoporous structures are formed by a…