Tzu‐Ming Lu
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View article: Advancing microelectronics through nanoscale science: A perspective on needs and opportunities from the nanoscale science research centers
Advancing microelectronics through nanoscale science: A perspective on needs and opportunities from the nanoscale science research centers Open
Microelectronics are the cornerstone of the modern world, enhancing our daily lives by providing services such as communications and datacenters. These resources are accessible thanks to the continual pursuit of a deeper understanding of t…
View article: High Mobility and Electrostatics in GeSn Quantum Wells With SiGeSn Barriers
High Mobility and Electrostatics in GeSn Quantum Wells With SiGeSn Barriers Open
GeSn is an emerging material with potential applications in next‐generation integrated optoelectronics and quantum information processing. While GeSn/SiGeSn quantum wells exhibit promising optical properties, their electrical transport cha…
View article: Direct integration of atomic precision advanced manufacturing into middle-of-line silicon fabrication
Direct integration of atomic precision advanced manufacturing into middle-of-line silicon fabrication Open
Atomic precision advanced manufacturing (APAM) dopes silicon with enough carriers to change its electronic structure and can be used to create novel devices by defining metallic regions whose boundaries have single-atom abruptness. Incompa…
View article: InAs sidewall tunnel diodes enabled by surface states
InAs sidewall tunnel diodes enabled by surface states Open
Negative differential resistance (NDR), where the device current decreases with increasing bias voltage, is a representative phenomenon where quantum mechanics induces counterintuitive physical behavior and offers promising applications su…
View article: Deep Generative Learning of Magnetic Frustration in Artificial Spin Ice from Magnetic Force Microscopy Images
Deep Generative Learning of Magnetic Frustration in Artificial Spin Ice from Magnetic Force Microscopy Images Open
Increasingly large datasets of microscopic images with atomic resolution facilitate the development of machine learning methods to identify and analyze subtle physical phenomena embedded within the images. In this work, microscopic images …
View article: Programmable Cryogenic Memory in a Ge/GeSi Heterostructure
Programmable Cryogenic Memory in a Ge/GeSi Heterostructure Open
Programmable memory components that operate optimally at cryogenic temperatures are essential for cryogenic computing architectures that seek to implement computing‐in‐memory. In this work, we demonstrate highly programmable memory in a Ge…
View article: Development of a test suite for digital printing devices
Development of a test suite for digital printing devices Open
Digital production printing devices are gaining a stronger foothold in the print industry, often complementing and sometimes rivaling offset printing. Now that digital printing has achieved production speeds and standards, a number of digi…
View article: Study on the resistivity anisotropy of the lithosphere in the Solonker suture zone and its adjacent areas
Study on the resistivity anisotropy of the lithosphere in the Solonker suture zone and its adjacent areas Open
The central region of the Solonker Suture Zone (SSZ), along with its adjacent areas, underwent considerable tectonic activity, which included the closure of the Paleozoic Paleo-Asian Ocean, the closure of the Mesozoic Mongolian Okhotsk Oce…
View article: Dynamic Carrier Modulation via Nonlinear Acoustoelectric Transport in van der Waals Heterostructures
Dynamic Carrier Modulation via Nonlinear Acoustoelectric Transport in van der Waals Heterostructures Open
Dynamically manipulating carriers in van der Waals heterostructures could enable solid-state quantum simulators with tunable lattice parameters. A key requirement is forming deep potential wells to reliably trap excitations. Here, we repor…
View article: Off-state magnetoresistance in long-channel germanium Schottky-barrier MOSFETs
Off-state magnetoresistance in long-channel germanium Schottky-barrier MOSFETs Open
An increasing magnetic field perpendicular to an undoped semiconductor surface at low temperature is known to strengthen the binding of localized electrons to stationary ions, as the wavefunction's tails evolve from exponential to Gaussian…
View article: Gate-Tunable Short-Wave Infrared Polycrystalline GeSn Phototransistors on Noncrystalline Substrates
Gate-Tunable Short-Wave Infrared Polycrystalline GeSn Phototransistors on Noncrystalline Substrates Open
GeSn is a group-IV alloy with immense potential to advance microelectronics technology due to its intrinsic compatibility with existing Si CMOS processes. With a sufficiently high Sn composition, GeSn is classified as a direct bandgap semi…
View article: Structural properties and recrystallization effects in ion beam modified B20-type FeGe films
Structural properties and recrystallization effects in ion beam modified B20-type FeGe films Open
Disordered iron germanium (FeGe) has recently garnered interest as a testbed for a variety of magnetic phenomena as well as for use in magnetic memory and logic applications. This is partially owing to its ability to host skyrmions and ant…
View article: Study of phase decoherence in GeSn (8%) through measurements of the weak antilocalization effect
Study of phase decoherence in GeSn (8%) through measurements of the weak antilocalization effect Open
Alloying germanium with tin offers a means to modulate germanium's electronic structure, enabling a greater degree of control over quantum properties such as the retention of the phase or spin of the electron wave. However, the extent to w…
View article: Ambipolar Transport in Polycrystalline GeSn Transistors for Complementary Metal-Oxide-Semiconductor Applications
Ambipolar Transport in Polycrystalline GeSn Transistors for Complementary Metal-Oxide-Semiconductor Applications Open
Group-IV alloy GeSn is a promising material for electronic and optoelectronic applications due to its compatibility with both Si substrates and established Si fabrication processes. This study focuses on polycrystalline GeSn (10% Sn), whic…
View article: Modeling and Simulation of Electrostatics of Ge$_{\text{1-x}}$Sn$_{\text{x}}$ Layers Grown on Ge Substrates
Modeling and Simulation of Electrostatics of Ge$_{\text{1-x}}$Sn$_{\text{x}}$ Layers Grown on Ge Substrates Open
This work introduces a comprehensive simulation tool that provides a robust 1D Schrödinger – Poisson solver for modeling the electrostatics of heterostructures with an arbitrary number of layers, and non-uniform doping profiles along with …
View article: Structural Properties and Recrystallization Effects in Ion Beam Modified B20-type FeGe Films
Structural Properties and Recrystallization Effects in Ion Beam Modified B20-type FeGe Films Open
Disordered iron germanium (FeGe) has recently garnered interest as a testbed for a variety of magnetic phenomena as well as for use in magnetic memory and logic applications. This is partially owing to its ability to host skyrmions and ant…
View article: Using a high-fidelity numerical model to infer the shape of a few-hole Ge quantum dot
Using a high-fidelity numerical model to infer the shape of a few-hole Ge quantum dot Open
The magnetic properties of hole quantum dots in Ge are sensitive to their shape due to the interplay between strong spin-orbit coupling and confinement. We show that the split-off band, surrounding SiGe layers, and hole-hole interactions h…
View article: Growth and characterization of ferromagnetic Ga<sub>2</sub>O<sub>3</sub>:(Cr, Mn)
Growth and characterization of ferromagnetic Ga<sub>2</sub>O<sub>3</sub>:(Cr, Mn) Open
The goal of this Exploratory Express project was to explore the possibility of tunable ferromagnetism in Mn or Cr incorporated epitaxial Ga2O3 films. Tunability of magnetic properties can enable novel applications in spintronics, quantum c…
View article: Arbitrary Low-Dimensional Film Transfer Enabled by GeO<sub>2</sub> Release Layer
Arbitrary Low-Dimensional Film Transfer Enabled by GeO<sub>2</sub> Release Layer Open
Low-dimensional materials show great promise for enhanced computing and sensing performance in mission-relevant environments. However, integrating low-dimensional materials into conventional electronics remains a challenge. Here, we demons…
View article: Influence of electrical field on the susceptibility of gallium nitride transistors to proton irradiation
Influence of electrical field on the susceptibility of gallium nitride transistors to proton irradiation Open
Radiation susceptibility of electronic devices is commonly studied as a function of radiation energetics and device physics. Often overlooked is the presence or magnitude of the electrical field, which we hypothesize to play an influential…
View article: Selective modulation of electronic transport in VO2 induced by 10 keV helium ion irradiation
Selective modulation of electronic transport in VO2 induced by 10 keV helium ion irradiation Open
Vanadium dioxide (VO2) manifests an abrupt metal–insulator transition (MIT) from monoclinic to rutile phases, with potential use for tunable electronic and optical properties and spiking neuromorphic devices. Understanding pathways to modu…
View article: Characterization of Mn5Ge3 Contacts on a Shallow Ge/SiGe Heterostructure
Characterization of Mn5Ge3 Contacts on a Shallow Ge/SiGe Heterostructure Open
Mn5Ge3 is a ferromagnetic phase of the Mn-Ge system that is a potential contact material for efficient spin injection and detection. Here, we investigate the creation of Mn5Ge3-based contacts on a Ge/SiGe quantum well heterostructure via s…
View article: Method of chemical doping that uses CMOS-compatible processes
Method of chemical doping that uses CMOS-compatible processes Open
A method of Atomic Precision Advanced Manufacturing (APAM) is provided, in which a substrate is doped from a dopant precursor gas. The method involves covering a surface of the substrate with a hard mask, selectively removing material from…
View article: Nanoscale bolometer operating near the thermodynamic limit
Nanoscale bolometer operating near the thermodynamic limit Open
A nanoscale bolometer for infrared (IR) thermal imaging comprises a subwavelength antenna that provides a specific detectivity approaching a fundamental, thermodynamic limit. The uncooled nanobolometer achieves performance comparable to co…