Explanipedia

A 200 GHz Medium Power Amplifier MMIC in Cascode Metamorphic HEMT Technology Open

Y. Campos‐Roca, A. Tessmann, Belén Amado-Rey, Sandrine Wagner, H. Maßler , et al. · 2014

Materials science Engineering

<p>A 200 GHz power amplifier is presented. The millimeter-wave monolithic integrated circuit (MMIC) has been realized in a 35 nm InAlAs/InGaAs cascode metamorphic high electron mobility transistor (MHEMT) process in grounde…

20 Gb/s monolithic integrated clock recovery and data decision Open

Z.-G. Wang, Manfred Berroth, V. Hurm, Manfred Lang, P. Hofmann , et al. · 1994

Computer science Materials science Engineering

An IC for 20 Gb/s clock recovery and data decision was realised using 0.3 m gate-length QW-HEMTs. A narrow-band regenerative frequency divider with on-chip resonator filters is used for the clock recovery. The parallel processing concept i…

14 GHz bandwidth MSM photodiode AlGaAs/GaAs HEMT monolithic integrated optoelectronic receiver Open

V. Hurm, M. Ludwig, J. Rosenzweig, W. Benz, Manfred Berroth , et al. · 1993

Materials science Physics Engineering

A monolithic optoelectronic receiver consisting of an MSM photodiode and a two-stage amplifer has been fabricated using an enhancement/depletion 0.3 μm recessed-gate AlGaAs/GaAs HEMT process. The band-width of 14.3 GHz implies suitability …

Indirect Optically Controlled Pseudomorphic HEMT Based MMIC Oscillator Open

A. Bangert, W. Benz, Manfred Berroth, A. Hülsmann, V. Hurm , et al. · 1992

Materials science Physics Computer science

For the first time an indirect optically controlled monolithic integrated oscillator was fabricated and examined experimentally. The oscillator was designed for a frequency of about 7 GHz. By illuminating a 60x60 μm2 photodiode by the ligh…

10-20 Gbit/s GaAs/AlGaAs HEMT ICs for high speed data links Open

Manfred Berroth, V. Hurm, Manfred Lang, M. Ludwig, U. Nowotny , et al. · 1992

Physics Computer science Engineering

A set of ICs has been developed for high-speed data links at data rates above 10 Gbit/s. A recessed gate process for double pulse doped quantum well transistors has been used with e-beam written 0.3- μm gates. A 4 bit multiplexer and a las…

10 Gb/s monolithic integrated MSM-photodiode AlGaAs/GaAs-HEMT optoelectronic receiver Open

V. Hurm, J. Rosenzweig, M. Ludwig, W. Benz, R. Osorio , et al. · 1991

Materials science Engineering

A photoreceiver based on a metal-semiconductor-metal (MSM) photodiode and AlGaAs/GaAs HEMTs is presented. The photoreceiver was fabricated using a 0.5-μm recessed-gate process for double delta-doped quantum-well HEMTs. The following mean v…

10 Gbit/s Monolithic Integrated Msm-Photodiode AlGaAs/GaAs-Hemt Optoelectronic Receiver Open

V. Hurm, J. Rosenzweig, M. Ludwig, W. Benz, R. Osorio , et al. · 1991

Materials science Engineering

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