V. М. Mikoushkin
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Features of ohmic contact with an ion-induced <i>p</i>-GaAs nanolayer Open
The properties of a metal contact with a p-GaAs layer ~8 nm thick induced by low-energy Ar+ ions on an n-GaAs wafer as a result of the conduction tipe type conversion have been studied. The metal was deposited according to the standard tec…
Room-temperature band-edge photoluminescence of GaAs irradiated with medium-energy N+ ions Open
The implanted semiconductors need annealing-induced restoration of luminescent and electrical properties for further applications. However, it is still unknown how the effect of the extra-defect formation near the surface influences on the…
View article: Composition and band structure of the native oxide nanolayer on the ion beam treated surface of the GaAs wafer
Composition and band structure of the native oxide nanolayer on the ion beam treated surface of the GaAs wafer Open
Detailed information on GaAs oxide properties is important for solving the problem of passivating and dielectric layers in the GaAs-based electronics. The elemental and chemical compositions of the native oxide layer grown on the atomicall…
View article: Formation of a p-n junction on the GaAs-surface by an Ar+ ion beam
Formation of a p-n junction on the GaAs-surface by an Ar+ ion beam Open
The core-level and valence band electronic structure of the well-defined near-surface layer of n-GaAs (100) has been studied by synchrotron-based high-resolution photoelectron spectroscopy before and after modification of the layer by an A…