Viktor Kandyba
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View article: Rotation symmetry mismatch and interlayer hybridization in MoS2-black phosphorus van der Waals heterostructures
Rotation symmetry mismatch and interlayer hybridization in MoS2-black phosphorus van der Waals heterostructures Open
Interlayer coupling in 2D heterostructures can result in a reduction of the rotation symmetry and the generation of quantum phenomena. Although these effects have been demonstrated in transition metal dichalcogenides (TMDs) with mismatched…
View article: STUDY OF MACHINE LEARNING TOOLS AND ALGORITHMS FOR RECOGNITION AND DIGITALISATION OF SALES RECEIPTS
STUDY OF MACHINE LEARNING TOOLS AND ALGORITHMS FOR RECOGNITION AND DIGITALISATION OF SALES RECEIPTS Open
This article discusses the issue of processing images of sales receipts for subsequent text information extraction using OCR methods. This application is helpful for maintaining a family budget or for conducting accounting in small compani…
View article: Revealing the conduction band and pseudovector potential in 2D moiré semiconductors
Revealing the conduction band and pseudovector potential in 2D moiré semiconductors Open
Stacking monolayer semiconductors results in moiré patterns that host many correlated and topological electronic phenomena, but measurements of the basic electronic structure underpinning these phenomena are scarce. Here, we investigate th…
View article: Robustness of Momentum-Indirect Interlayer Excitons in MoS<sub>2</sub>/WSe<sub>2</sub> Heterostructure against Charge Carrier Doping
Robustness of Momentum-Indirect Interlayer Excitons in MoS<sub>2</sub>/WSe<sub>2</sub> Heterostructure against Charge Carrier Doping Open
Monolayer transition-metal dichalcogenide (TMD) semiconductors exhibit strong excitonic effects and hold promise for optical and optoelectronic applications. Yet, electron doping of TMDs leads to the conversion of neutral excitons into neg…
View article: A robust weak topological insulator in a bismuth halide Bi4Br2I2
A robust weak topological insulator in a bismuth halide Bi4Br2I2 Open
We apply a topological material design concept for selecting a bulk topology of 3D crystals by different van-der-Waals stacking of 2D topological insulator layers, and find a bismuth halide Bi4Br2I2 to be an ideal weak topological insulato…
View article: Domain Dependent Fermi Arcs Observed in a Striped Phase Dichalcogenide
Domain Dependent Fermi Arcs Observed in a Striped Phase Dichalcogenide Open
Solids undergoing symmetry breaking phase transitions commonly exhibit domains of low symmetry phases with various sizes and morphological shapes. Usually, the shapes of these domains are not directly related to the nature of symmetry brea…
View article: Observation of {\\Gamma}-valley moir\\'e bands and emergent hexagonal\n lattice in twisted transition metal dichalcogenides
Observation of {\\Gamma}-valley moir\\'e bands and emergent hexagonal\n lattice in twisted transition metal dichalcogenides Open
Twisted van der Waals heterostructures have recently been proposed as a\ncondensed-matter platform for realizing controllable quantum models due to the\nlow-energy moir\\'e bands with specific charge distributions in moir\\'e\nsuperlattice…
View article: Moiré Superlattice Effects and Band Structure Evolution in Near-30-Degree Twisted Bilayer Graphene
Moiré Superlattice Effects and Band Structure Evolution in Near-30-Degree Twisted Bilayer Graphene Open
In stacks of two-dimensional crystals, mismatch of their lattice constants and misalignment of crystallographic axes lead to formation of moiré patterns. We show that moiré superlattice effects persist in twisted bilayer graphene (tBLG) wi…
View article: Field-Dependent Band Structure Measurements in Two-Dimensional Heterostructures
Field-Dependent Band Structure Measurements in Two-Dimensional Heterostructures Open
In electronic and optoelectronic devices made from van der Waals heterostructures, electric fields can induce substantial band structure changes which are crucial to device operation but cannot usually be directly measured. Here, we use sp…
View article: Atomic and electronic structure of two-dimensional Mo<sub>(1−</sub> <sub>x</sub> )W <sub>x</sub> S<sub>2</sub> alloys
Atomic and electronic structure of two-dimensional Mo<sub>(1−</sub> <sub>x</sub> )W <sub>x</sub> S<sub>2</sub> alloys Open
Alloying enables engineering of the electronic structure of semiconductors for optoelectronic applications. Due to their similar lattice parameters, the two-dimensional semiconducting transition metal dichalcogenides of the MoWSeS group (M…
View article: Observation of flat bands in twisted bilayer graphene
Observation of flat bands in twisted bilayer graphene Open
Transport experiments in twisted bilayer graphene have revealed multiple superconducting domes separated by correlated insulating states1–5. These properties are generally associated with strongly correlated states in a flat mini-band of t…
View article: Ghost anti-crossings caused by interlayer umklapp hybridization of bands in 2D heterostructures
Ghost anti-crossings caused by interlayer umklapp hybridization of bands in 2D heterostructures Open
In two-dimensional heterostructures, crystalline atomic layers with differing lattice parameters can stack directly one on another. The resultant close proximity of atomic lattices with differing periodicity can lead to new phenomena. For …
View article: XPS studies of the surface of TiO2:Ag nanopowders
XPS studies of the surface of TiO2:Ag nanopowders Open
n-TiO2 and n-TiO2:Ag nanopowders were synthesized by the method of electric explosion of wires (EEW). The doping of nanopowders took place during the explosion of titanium wire, on the surface of which an Ag2O layer of the appropriate mass…
View article: Ghost anti-crossings caused by interlayer umklapp hybridization of bands in 2D heterostructures
Ghost anti-crossings caused by interlayer umklapp hybridization of bands in 2D heterostructures Open
In two-dimensional heterostructures, crystalline atomic layers with differing lattice parameters can stack directly one on another. The resultant close proximity of atomic lattices with differing periodicity can lead to new phenomena. For …
View article: Atomic and electronic structure of two-dimensional Mo(1-x)WxS2 alloys
Atomic and electronic structure of two-dimensional Mo(1-x)WxS2 alloys Open
Alloying enables engineering of the electronic structure of semiconductors for optoelectronic applications. Due to their similar lattice parameters, the two-dimensional semiconducting transition metal dichalcogenides of the MoWSeS group (M…
View article: Ghost anti-crossings caused by interlayer umklapp hybridization of bands\n in 2D heterostructures
Ghost anti-crossings caused by interlayer umklapp hybridization of bands\n in 2D heterostructures Open
In two-dimensional heterostructures, crystalline atomic layers with differing\nlattice parameters can stack directly one on another. The resultant close\nproximity of atomic lattices with differing periodicity can lead to new\nphenomena. F…
View article: Material design with the van der Waals stacking of bismuth-halide chains realizing a higher-order topological insulator
Material design with the van der Waals stacking of bismuth-halide chains realizing a higher-order topological insulator Open
The van der Waals (vdW) materials with low dimensions have been extensively studied as a platform to generate exotic quantum properties. Advancing this view, a great deal of attention is currently paid to topological quantum materials with…
View article: Indirect to Direct Gap Crossover in Two-Dimensional InSe Revealed by Angle-Resolved Photoemission Spectroscopy
Indirect to Direct Gap Crossover in Two-Dimensional InSe Revealed by Angle-Resolved Photoemission Spectroscopy Open
Atomically thin films of III-VI post-transition metal chalcogenides (InSe and GaSe) form an interesting class of two-dimensional semiconductors that feature a strong variation of their band gap as a function of the number of layers in the …
View article: Electronic structure of single and few layered graphene studied by angle resolved photoemission spectro-microscopy.
Electronic structure of single and few layered graphene studied by angle resolved photoemission spectro-microscopy. Open
This thesis reports the study of electronic band structure of single and few layered graphene grown by thermal decomposition of SiC at the surface and by C-sublimation on Ru single crystals. Growth conditions were optimized in order to obt…
View article: Gold Dispersion and Activation on the Basal Plane of Single-Layer MoS<sub>2</sub>
Gold Dispersion and Activation on the Basal Plane of Single-Layer MoS<sub>2</sub> Open
Gold islands are typically associated with high binding affinity to adsorbates and catalytic activity. Here we present the growth of such dispersed nanoscale gold islands on single layer MoS2, prepared on an inert SiO2/Si support by chemic…
View article: Determination of band offsets, hybridization, and exciton binding in 2D semiconductor heterostructures
Determination of band offsets, hybridization, and exciton binding in 2D semiconductor heterostructures Open
Photoemission measurements on exfoliated 2D heterostructures reveal detailed electronic structure and hybridization effects.
View article: Band structure characterization of WS2 grown by chemical vapor deposition
Band structure characterization of WS2 grown by chemical vapor deposition Open
Growth by chemical vapor deposition (CVD) leads to multilayer WS2 of very high quality, based on high-resolution angle-resolved photoemission spectroscopy. The experimental valence band electronic structure is considered to be in good agre…
View article: Band parameters and hybridization in 2D semiconductor heterostructures from photoemission spectroscopy
Band parameters and hybridization in 2D semiconductor heterostructures from photoemission spectroscopy Open
Combining monolayers of different two-dimensional (2D) semiconductors into heterostructures opens up a wealth of possibilities for novel electronic and optical functionalities. Exploiting them hinges on accurate measurements of the band pa…