Vito Šimonka
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View article: Surface Morphology of 4H-SiC after Thermal Oxidation
Surface Morphology of 4H-SiC after Thermal Oxidation Open
Step-controlled growth of 4H-SiC epitaxial layers leads to the formation of a step-bunched morphology along the surface with larger macrosteps, composed of smaller microsteps of several Si-C bilayer heights. As thermal oxidation is an orie…