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View article: Leakage mechanism in Al <sub>x</sub> Ga<sub>1−x </sub>N/GaN heterostructures with AlN interlayer
Leakage mechanism in Al <sub>x</sub> Ga<sub>1−x </sub>N/GaN heterostructures with AlN interlayer Open
Leakage of Al x Ga 1− x N/GaN heterostructures was investigated by admittance–voltage profiling. Nominally undoped structures were grown by low-pressure metal-organic vapor-phase epitaxy. The investigated structures had an Al-content of 30…