J. Sadowski
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View article: The integration of Raman spectrometer with glove box for high-purity investigation in an inert gas condition
The integration of Raman spectrometer with glove box for high-purity investigation in an inert gas condition Open
View article: Topological material in the III–V family: Heteroepitaxial InBi on InAs
Topological material in the III–V family: Heteroepitaxial InBi on InAs Open
InBi(001) is formed epitaxially on InAs(111)-A by depositing Bi onto an In-rich surface. Angle-resolved photoemission measurements reveal topological electronic surface states, close to the M¯ high symmetry point. This demonstrates a heter…
View article: Pentagonal nanowires from topological crystalline insulators: a platform for intrinsic core-shell nanowires and higher-order topology
Pentagonal nanowires from topological crystalline insulators: a platform for intrinsic core-shell nanowires and higher-order topology Open
We report on the experimental realization of Pb1-xSnxTe pentagonal nanowires (NWs) with [110] orientation using molecular beam epitaxy techniques. Using first-principles calculations, we investigate the structural stability in NWs of SnTe …
View article: Axially lattice-matched wurtzite/rock-salt GaAs/Pb1−xSnxTe nanowires
Axially lattice-matched wurtzite/rock-salt GaAs/Pb1−xSnxTe nanowires Open
View article: The Integration of Raman Spectrometer with Glove Box for High-Purity Investigation in an Inert Gas Condition
The Integration of Raman Spectrometer with Glove Box for High-Purity Investigation in an Inert Gas Condition Open
View article: The Integration of Raman Spectrometer with Glove Box for High-Purity Investigation in an Inert Gas Condition
The Integration of Raman Spectrometer with Glove Box for High-Purity Investigation in an Inert Gas Condition Open
View article: Influence of Bi doping on the electronic structure of (Ga,Mn)As epitaxial layers
Influence of Bi doping on the electronic structure of (Ga,Mn)As epitaxial layers Open
View article: Influence of Bi doping on the electronic structure of (Ga,Mn)As epitaxial layers
Influence of Bi doping on the electronic structure of (Ga,Mn)As epitaxial layers Open
The influence of the addition of Bi to the (Ga,Mn)As dilute ferromagnetic semiconductor on its electronic structure as well as on its magnetic and structural properties has been studied. Epitaxial (Ga,Mn)(Bi,As) layers of high structural p…
View article: Impact of Bismuth Incorporation into (Ga,Mn)As Dilute Ferromagnetic Semiconductor on Its Magnetic Properties and Magnetoresistance
Impact of Bismuth Incorporation into (Ga,Mn)As Dilute Ferromagnetic Semiconductor on Its Magnetic Properties and Magnetoresistance Open
The impact of bismuth incorporation into the epitaxial layer of a (Ga,Mn)As dilute ferromagnetic semiconductor on its magnetic and electromagnetic properties is studied in very thin layers of quaternary (Ga,Mn)(Bi,As) compound grown on a G…
View article: Nearly Lattice Matched GaAs/Pb(1-x)Sn(x)Te Core-Shell Nanowires
Nearly Lattice Matched GaAs/Pb(1-x)Sn(x)Te Core-Shell Nanowires Open
We investigate the full and half-shells of Pb(1-x)Sn(x)Te topological crystalline insulator deposited by molecular beam epitaxy on the sidewalls of wurtzite GaAs nanowires (NWs). Due to the distinct orientation of the IV-VI shell with resp…
View article: Structural Properties of TaAs Weyl Semimetal Thin Films Grown by Molecular Beam Epitaxy on GaAs(001) Substrates
Structural Properties of TaAs Weyl Semimetal Thin Films Grown by Molecular Beam Epitaxy on GaAs(001) Substrates Open
Thin crystalline layers of TaAs Weyl semimetal are grown by molecular beam epitaxy on GaAs(001) substrates. The (001) planes of the tetragonal TaAs lattice are parallel to the GaAs(001) substrate, but the corresponding in-plane crystallogr…
View article: Structural properties of TaAs Weyl semimetal thin films grown by molecular beam epitaxy on GaAs(001) substrates
Structural properties of TaAs Weyl semimetal thin films grown by molecular beam epitaxy on GaAs(001) substrates Open
Thin crystalline layers of TaAs Weyl semimetal (9 and 18 nm thick) are grown by molecular beam epitaxy on GaAs(001) substrates. The (001) planes of the tetragonal TaAs lattice are parallel to the GaAs(001) substrate, but the corresponding …
View article: Current-induced magnetization reversal in (Ga,Mn)(Bi,As) epitaxial layer with perpendicular magnetic anisotropy
Current-induced magnetization reversal in (Ga,Mn)(Bi,As) epitaxial layer with perpendicular magnetic anisotropy Open
Pulsed current-induced magnetization reversal is investigated in the layer of (Ga,Mn)(Bi,As) dilute ferromagnetic semiconductor (DFS) epitaxially grown under tensile misfit strain causing perpendicular magnetic anisotropy in the layer. The…
View article: Molecular beam epitaxy growth of MoTe2 on hexagonal boron nitride
Molecular beam epitaxy growth of MoTe2 on hexagonal boron nitride Open
View article: Bi incorporation and segregation in the MBE-grown GaAs-(Ga,Al)As-Ga(As,Bi) core–shell nanowires
Bi incorporation and segregation in the MBE-grown GaAs-(Ga,Al)As-Ga(As,Bi) core–shell nanowires Open
View article: Mn Contribution to the Valence Band of Ga<sub>0.98</sub>Mn<sub>0.02</sub>Sb - A Photoemission Study
Mn Contribution to the Valence Band of Ga<sub>0.98</sub>Mn<sub>0.02</sub>Sb - A Photoemission Study Open
The contribution of the Mn 3d states to the valence band of Ga0.98Mn0.02Sb, an important factor determining the properties of this system, including the mechanism responsible for the magnetic characteristics, has been revealed by photoelec…
View article: Unit cell distortion and surface morphology diversification in a SnTe/CdTe(001) topological crystalline insulator heterostructure: influence of defect azimuthal distribution
Unit cell distortion and surface morphology diversification in a SnTe/CdTe(001) topological crystalline insulator heterostructure: influence of defect azimuthal distribution Open
Monoclinic-distorted SnTe(001) topological crystalline insulator layers with a strain large enough to open the energy gap in the metallic Dirac-like spectrum of surface states were grown by molecular beam epitaxy and crystallographically a…
View article: Molecular Beam Epitaxy growth of MoTe$_{\tiny{\textrm{2}}}$ on Hexagonal Boron Nitride
Molecular Beam Epitaxy growth of MoTe$_{\tiny{\textrm{2}}}$ on Hexagonal Boron Nitride Open
Hexagonal boron nitride has already been proven to serve as a decent substrate for high quality epitaxial growth of several 2D materials, such as graphene, MoSe$_{\tiny{\textrm{2}}}$, MoS$_{\tiny{\textrm{2}}}$ or WSe$_{\tiny{\textrm{2}}}$.…
View article: Bi Incorporation and Segregation in the MBE-Grown GaAs-(Ga,Al)As-Ga(As,Bi) Core-Shell Nanowires
Bi Incorporation and Segregation in the MBE-Grown GaAs-(Ga,Al)As-Ga(As,Bi) Core-Shell Nanowires Open
Incorporation of Bi into GaAs-(Ga,Al)As-Ga(As,Bi) core-shell nanowires grown by molecular beam epitaxy is studied with transmission electron microscopy. Nanowires are grown on GaAs(100) substrates with Au-droplet assisted mode. Bi-doped sh…
View article: Molecular Beam Epitaxy of a 2D Material Nearly Lattice Matched to a 3D Substrate: NiTe<sub>2</sub> on GaAs
Molecular Beam Epitaxy of a 2D Material Nearly Lattice Matched to a 3D Substrate: NiTe<sub>2</sub> on GaAs Open
The lattice mismatch between interesting 2D materials and commonly available 3D substrates is one of the obstacles in the epitaxial growth of monolithic 2D/3D heterostructures, but a number of 2D materials have not yet been considered for …
View article: Molecular Beam Epitaxy of a 2D material nearly lattice matched to a 3D substrate: $NiTe_{2}$ on $GaAs$
Molecular Beam Epitaxy of a 2D material nearly lattice matched to a 3D substrate: $NiTe_{2}$ on $GaAs$ Open
The lattice mismatch between interesting 2D materials and commonly available 3D substrates is one of the obstacles in the epitaxial growth of monolithic 2D/3D heterostructures, but a number of 2D materials have not yet been considered for …
View article: Tunable Planar Hall Effect in (Ga,Mn)(Bi,As) Epitaxial Layers
Tunable Planar Hall Effect in (Ga,Mn)(Bi,As) Epitaxial Layers Open
We have thoroughly investigated the planar Hall effect (PHE) in the epitaxial layers of the quaternary compound (Ga,Mn)(Bi,As). The addition of a small amount of heavy Bi atoms to the prototype dilute ferromagnetic semiconductor (Ga,Mn)As …
View article: Magnetic properties of wurtzite (Ga,Mn)As
Magnetic properties of wurtzite (Ga,Mn)As Open
View article: Structural Quality and Magnetotransport Properties of Epitaxial Layers of the (Ga,Mn)(Bi,As) Dilute Magnetic Semiconductor
Structural Quality and Magnetotransport Properties of Epitaxial Layers of the (Ga,Mn)(Bi,As) Dilute Magnetic Semiconductor Open
Structural analysis of epitaxial layers of the (Ga,Mn)(Bi,As) quaternary dilute magnetic semiconductor (DMS), together with investigations of their magnetotransport properties, has been thoroughly performed. The obtained results are compar…
View article: Hard X-ray Photoelectron Momentum Microscopy and Kikuchi Diffraction on (In,Ga,Mn)As Thin Films
Hard X-ray Photoelectron Momentum Microscopy and Kikuchi Diffraction on (In,Ga,Mn)As Thin Films Open
Recent advances in the brilliance of hard-X-ray beamlines and photoelectron momentum microscopy facilitate bulk valence-band mapping and core-level-resolved hard-X-ray photoelectron diffraction (hXPD) for structural analysis in the same se…
View article: Narrow Excitonic Lines and Large-Scale Homogeneity of Transition-Metal Dichalcogenide Monolayers Grown by Molecular Beam Epitaxy on Hexagonal Boron Nitride
Narrow Excitonic Lines and Large-Scale Homogeneity of Transition-Metal Dichalcogenide Monolayers Grown by Molecular Beam Epitaxy on Hexagonal Boron Nitride Open
Monolayer transition-metal dichalcogenides (TMDs) manifest exceptional optical properties related to narrow excitonic resonances. However, these properties have been so far explored only for structures produced by techniques inducing consi…
View article: Bi ultra-thin crystalline films on InAs(1 1 1)A and B substrates: a combined core-level and valence-band angle-resolved and dichroic photoemission study
Bi ultra-thin crystalline films on InAs(1 1 1)A and B substrates: a combined core-level and valence-band angle-resolved and dichroic photoemission study Open
The growth of Bi on both the In-terminated (A) face and the As-terminated (B) face of InAs(1 1 1) has been investigated by low-energy electron diffraction, scanning tunnelling microscopy, and photoelectron spectroscopy using synchrotron ra…
View article: Enhanced Ferromagnetism in Cylindrically Confined MnAs Nanocrystals Embedded in Wurtzite GaAs Nanowire Shells
Enhanced Ferromagnetism in Cylindrically Confined MnAs Nanocrystals Embedded in Wurtzite GaAs Nanowire Shells Open
Nearly a 30% increase in the ferromagnetic phase transition temperature has been achieved in strained MnAs nanocrystals embedded in a wurtzite GaAs matrix. Wurtzite GaAs exerts tensile stress on hexagonal MnAs nanocrystals, preventing a he…
View article: Evidence for the homogeneous ferromagnetic phase in (Ga,Mn)(Bi,As) epitaxial layers from muon spin relaxation spectroscopy
Evidence for the homogeneous ferromagnetic phase in (Ga,Mn)(Bi,As) epitaxial layers from muon spin relaxation spectroscopy Open
View article: Bi monocrystal formation on InAs(111)A and B substrates
Bi monocrystal formation on InAs(111)A and B substrates Open
The growth of Bi films deposited on both A and B faces of InAs(111) has been investigated by low-energy electron diffraction, scanning tunneling microscopy, and photoelectron spectroscopy using synchrotron radiation. The changes upon Bi de…