Wadia Jouha
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View article: SiC power MOSFET overload detection, short-circuit protection and gate-oxide integrity monitoring using a switched resistors dual-channel gate-driver
SiC power MOSFET overload detection, short-circuit protection and gate-oxide integrity monitoring using a switched resistors dual-channel gate-driver Open
View article: Concept de grille quasi-flottante pour la protection d'un MOSFET SiC et la surveillance de l'intégrité de son oxyde basé sur une architecture de driver à résistances de grilles commutées
Concept de grille quasi-flottante pour la protection d'un MOSFET SiC et la surveillance de l'intégrité de son oxyde basé sur une architecture de driver à résistances de grilles commutées Open
National audience
View article: Parametric nano-electrical analysis for SiC junctions of a packaged device
Parametric nano-electrical analysis for SiC junctions of a packaged device Open
International audience
View article: Gate-damage safe failure-mode deep analysis under short-circuit operation of 1.2kV and 1.7kV power SiC MOSFET using dedicated gate-source / drain-source voltage depolarization and damage-mode optical imaging
Gate-damage safe failure-mode deep analysis under short-circuit operation of 1.2kV and 1.7kV power SiC MOSFET using dedicated gate-source / drain-source voltage depolarization and damage-mode optical imaging Open
International audience
View article: Failure Analysis of Atmospheric Neutron-Induced Single Event Burnout of a Commercial SiC MOSFET
Failure Analysis of Atmospheric Neutron-Induced Single Event Burnout of a Commercial SiC MOSFET Open
Dealing with electronic devices for high reliability applications in terrestrial environments, neutron-induced Single Event Effects must be investigated. In this paper, the experimental observation of an atmospheric-like neutron-induced Si…
View article: Repetitive short circuit capability of SiC MOSFET at specific low gate-source voltage bias for more robust extreme operation
Repetitive short circuit capability of SiC MOSFET at specific low gate-source voltage bias for more robust extreme operation Open
View article: Dopant activity for highly in-situ doped polycrystalline silicon: hall, XRD, scanning capacitance microscopy (SCM) and scanning spreading resistance microscopy (SSRM)
Dopant activity for highly in-situ doped polycrystalline silicon: hall, XRD, scanning capacitance microscopy (SCM) and scanning spreading resistance microscopy (SSRM) Open
Progressing miniaturization and the development of semiconductor integrated devices ask for advanced characterizations of the different device components with ever-increasing accuracy. Particularly in highly doped layers, a fine control of…
View article: In‐depth analysis of the static behaviour of a SiC MOSFET and of its associated parameters using both compact modelling and physical simulation
In‐depth analysis of the static behaviour of a SiC MOSFET and of its associated parameters using both compact modelling and physical simulation Open
In this study, the authors aim at investigating the static electro‐thermal behaviour of two new generations of power silicon carbide metal oxide semiconductor field effect transistors (SiC MOSFETs). The studied devices are commercialised a…
View article: New Technologies of Power Transistors for Efficiency Increase of Power Converters: The Reliability Consideration
New Technologies of Power Transistors for Efficiency Increase of Power Converters: The Reliability Consideration Open
International audience
View article: Etude et modélisation des dégradations des composants de puissance grand gap soumis à des contraintes thermiques et électriques
Etude et modélisation des dégradations des composants de puissance grand gap soumis à des contraintes thermiques et électriques Open
This work aims to investigate the robustness of three generations of power SiC MOSFETs (SiliconCarbide Metal Oxide Semiconductor Field E_ect Transistors). Several approaches are followed :electrical characterization, device modeling, agein…
View article: An Improved SPICE Model for the Study of Electro-thermal Static Behavior for two New Generations of SiC MOSFET
An Improved SPICE Model for the Study of Electro-thermal Static Behavior for two New Generations of SiC MOSFET Open
This paper aims to model the static behavior of two generations of Silicon carbide Metal Oxide Semiconductor Field Effect Transistors (SiC-MOSFETs) subjected to temperature and input voltage variations. The description of the studied devic…