Wan-Sin Chen
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View article: Nanometer-thick molecular beam epitaxy Al films capped with <i>in situ</i> deposited Al2O3—High-crystallinity, morphology, and superconductivity
Nanometer-thick molecular beam epitaxy Al films capped with <i>in situ</i> deposited Al2O3—High-crystallinity, morphology, and superconductivity Open
Achieving high material perfection in aluminum (Al) films and their associated Al/AlOx heterostructures is essential for enhancing the coherence time in superconducting quantum circuits. We grew Al films with thicknesses ranging from 3 to …
View article: Ultrahigh Vacuum Annealing of Atomic-Layer-Deposited Y<sub>2</sub>O<sub>3</sub>/GaAs in Perfecting Heterostructural Chemical Bonding for Effective Passivation
Ultrahigh Vacuum Annealing of Atomic-Layer-Deposited Y<sub>2</sub>O<sub>3</sub>/GaAs in Perfecting Heterostructural Chemical Bonding for Effective Passivation Open
Direct deposition of high-dielectric-constant oxides on high-mobility semiconductors with low trap densities is the key to high-performance metal–oxide–semiconductor (MOS) devices. Atomic layer deposition (ALD) has been employed in precise…
View article: Atomic Nature of the Growth Mechanism of Atomic Layer Deposited High-κ Y<sub>2</sub>O<sub>3</sub> on GaAs(001)-4 × 6 Based on in Situ Synchrotron Radiation Photoelectron Spectroscopy
Atomic Nature of the Growth Mechanism of Atomic Layer Deposited High-κ Y<sub>2</sub>O<sub>3</sub> on GaAs(001)-4 × 6 Based on in Situ Synchrotron Radiation Photoelectron Spectroscopy Open
Y2O3 was in situ deposited on a freshly grown molecular beam epitaxy GaAs(001)-4 × 6 surface by atomic layer deposition (ALD). In situ synchrotron radiation photoemission was used to study the mechanism of the tris(ethylcyclopentadienyl)yt…