Explanipedia

Model quantization for computing-in-memory: a survey Open

Sifan Sun, Jinyu Bai, Hanting Chen, Zhiwei Xie, Jingjing Li , et al. · 2025

Extending Straight-Through Estimation for Robust Neural Networks on Analog CIM Hardware Open

Y.T. Feng, Wenyong Zhou, Ying Lyu, Yixiang Zhang, Zhengwu Liu , et al. · 2025

Analog Compute-In-Memory (CIM) architectures promise significant energy efficiency gains for neural network inference, but suffer from complex hardware-induced noise that poses major challenges for deployment. While noise-aware training me…

A reconfigurable heterogeneous in-memory computing architecture for variable precision computation: a software-hardware co-design approach Open

Yen-Yu Chen, Hanjie Liu, Siqi Wang, J.-X. Mi, Xiong Xing , et al. · 2025

In-memory computing (IMC) has emerged as a promising approach for accelerating deep neural network (DNN) inference by relocating computations to memory arrays. However, the efficacy of analog IMC diminishes when higher computational precis…

A High-Resistance SOT Device Based Computing-in-Memory Macro With High Sensing Margin and Multi-Bit MAC Operations for AI Edge Inference Open

Junzhan Liu, J.-X. Mi, Yang Liu, Liang Zhang, He Zhang , et al. · 2025

Co2-Pressure-Induced Dual-Defect Engineering in 2d Medium-Entropy Alloys: Achieving Ultra-Narrow Voltage Window and Enhanced Stability for Acidic Water Electrolysis Open

Wen Xiong, Miaomiao Song, D. C. Zhang, Hong Zhao, Xiao‐Chang Lu , et al. · 2025

Toward Energy-efficient STT-MRAM-based Near Memory Computing Architecture for Embedded Systems Open

Yueting Li, Xueyan Wang, He Zhang, Biao Pan, Keni Qiu , et al. · 2024

Convolutional Neural Networks (CNNs) have significantly impacted embedded system applications across various domains. However, this exacerbates the real-time processing and hardware resource-constrained challenges of embedded systems. To t…

Roadmap for unconventional computing with nanotechnology Open

Giovanni Finocchio, Jean Anne C. Incorvia, Joseph S. Friedman, Yang Qu, Anna Giordano , et al. · 2024

In the ‘Beyond Moore’s Law’ era, with increasing edge intelligence, domain-specific computing embracing unconventional approaches will become increasingly prevalent. At the same time, adopting a variety of nanotechnologies will offer benef…

Voltage-Controlled Spin-Orbit-Torque-Based Nonvolatile Flip-Flop Designs for Ultra-Low-Power Applications Open

Xiao Liu, Erya Deng, Lichuan Luo, Linjun Jiang, Youguang Zhang , et al. · 2023

Flip-flop (FF) serves as a fundamental unit in various sequential logic circuits and complex digital electronic systems for generating, transforming, and temporarily storing digital signals. Nonvolatility plays a crucial role in FFs by ens…

Differentiable Multi-Fidelity Fusion: Efficient Learning of Physics Simulations with Neural Architecture Search and Transfer Learning Open

Yuwen Deng, Wang Kang, Wei Xing · 2023

With rapid progress in deep learning, neural networks have been widely used in scientific research and engineering applications as surrogate models. Despite the great success of neural networks in fitting complex systems, two major challen…

Experimental demonstration of a skyrmion-enhanced strain-mediated physical reservoir computing system Open

Yiming Sun, Tao Lin, Na Lei, Xing Chen, Wang Kang , et al. · 2023

Physical reservoirs holding intrinsic nonlinearity, high dimensionality, and memory effects have attracted considerable interest regarding solving complex tasks efficiently. Particularly, spintronic and strain-mediated electronic physical …

All-Digital Computing-in-Memory Macro Supporting FP64-Based Fused Multiply-Add Operation Open

Dejian Li, Kefan Mo, Liang Liu, Biao Pan, Weili Li , et al. · 2023

Recently, frequent data movement between computing units and memory during floating-point arithmetic has become a major problem for scientific computing. Computing-in-memory (CIM) is a novel computing paradigm that merges computing logic i…

Conference Committee Open

Mohamad Sawan, Weixin Gai, Weiqiang Liu, Xiaohang Wang, Wang Kang , et al. · 2022

Foreword Special Issue on Spintronics-Devices and Circuits Open

Brajesh Kumar Kaushik, S. Aggarwal, Supriyo Bandyopadhyay, Debanjan Bhowmik, Vivek De , et al. · 2022

International audience

Forecasting the outcome of spintronic experiments with Neural Ordinary Differential Equations Open

Xing Chen, Flavio Abreu Araujo, Mathieu Riou, Jacob Torrejón, D. Ravelosona , et al. · 2022

Experimental demonstration of skyrmionic magnetic tunnel junction at room temperature Open

Sai Li, Ao Du, Yadong Wang, Xinran Wang, Xueying Zhang , et al. · 2022

Chiral magnetic skyrmions are topological swirling spin textures that hold promise for future information technology. The electrical nucleation and motion of skyrmions have been experimentally demonstrated in the last decade, while electri…

Design of Optimal Scheme for Industrial Network Monitoring of Ocean Energy Power Generation System Open

Wang Kang, Gong Xi-wu · 2021

In recent years, with the development of ocean energy power generation technology, the monitoring technology of ocean energy distributed micro-grid power generation system is also advancing with the times. This paper proposes an optimizati…

Stochastic Computing Implemented by Skyrmionic Logic Devices Open

Haoyang Zhang, Daoqian Zhu, Wang Kang, Youguang Zhang, Weisheng Zhao · 2020

Magnetic skyrmion, topologically non-trivial spin texture, has been considered as promising information carrier in future electronic devices because of its nanoscale size, low depinning current density and high motion velocity. Despite the…

Magnetic Skyrmion Spectrum Under Voltage Excitation and its Linear Modulation Open

Xing Chen, Wang Kang, Daoqian Zhu, Na Lei, Xichao Zhang , et al. · 2019

Magnetic skyrmions are topological quasiparticles with great potential for\napplications in future information storage and processing devices because of\ntheir nanoscale size, high stability, and large velocity. Recently, the\nhigh-frequen…

Skyrmion-Induced Memristive Magnetic Tunnel Junction for Ternary Neural Network Open

Biao Pan, Deming Zhang, Xueying Zhang, Haotian Wang, Jinyu Bai , et al. · 2019

Novel skyrmion-magnetic tunnel junction (SK-MTJ) devices were investigated for the first time to implement the ternary neural networks (TNN). In the SK-MTJ, an extra magnetoresistance state beyond binary parallel and anti-parallel MTJ stat…

Low-Power (1T1N) Skyrmionic Synapses for Spiking Neuromorphic Systems Open

Tinish Bhattacharya, Sai Li, Yangqi Huang, Wang Kang, Weisheng Zhao , et al. · 2019

In this work, we propose a `1-transistor 1-nanotrack' (1T1N) synapse based on movement of magnetic skyrmions using spin polarised current pulses. The proposed synaptic bit-cell has 4 terminals and fully decoupled spike transmission- and pr…

A Robust Dual Reference Computing-in-Memory Implementation and Design Space Exploration Within STT-MRAM Open

Liuyang Zhang, Wang Kang, Hao Cai, Peng Ouyang, Lionel Torres , et al. · 2018

International audience

Field-Free Switching of Perpendicular Magnetic Tunnel Junction via Voltage-Gated Spin Hall Effect for Low-Power Spintronic Memory Open

Shouzhong Peng, Xiang Li, Wang Kang, He Zhang, Lezhi Wang , et al. · 2018

Spin Hall effect (SHE) and voltage-controlled magnetic anisotropy (VCMA) are two promising methods for low-power electrical manipulation of magnetization. Recently, magnetic field-free switching of perpendicular magnetization through SHE h…

Skyrmions in Magnetic Tunnel Junctions Open

Xueying Zhang, Wenlong Cai, Xichao Zhang, Zilu Wang, Zhi Li , et al. · 2018

In this work, we demonstrate that skyrmions can be nucleated in the free layer of a magnetic tunnel junction (MTJ) with Dzyaloshinskii-Moriya interactions (DMIs) by a spin-polarized current with the assistance of stray fields from the pinn…

Dynamics of a magnetic skyrmionium driven by spin waves Open

Sai Li, Jing Xia, Xichao Zhang, Motohiko Ezawa, Wang Kang , et al. · 2018

A magnetic skyrmionium is a skyrmion-like structure, but carries a zero net skyrmion number which can be used as a building block for non-volatile information processing devices. Here, we study the dynamics of a magnetic skyrmionium driven…

Memristors: Heterogeneous Memristive Devices Enabled by Magnetic Tunnel Junction Nanopillars Surrounded by Resistive Silicon Switches (Adv. Electron. Mater. 3/2018) Open

Yu Zhang, Xiaoyang Lin, Jean‐Paul Adam, Guillaume Agnus, Wang Kang , et al. · 2018

In article 1700461, Weisheng Zhao and co-workers demonstrate a heterogeneous memristive device based on a magnetic tunnel junction nanopillar surrounded by resistive filaments. It features spin transfer torque fast switching for computatio…

Addressing the Thermal Issues of STT-MRAM From Compact Modeling to Design Techniques Open

Liuyang Zhang, Yuanqing Cheng, Wang Kang, Lionel Torres, Youguang Zhang , et al. · 2018

Spin transfer torque magnetic random access memory (STT-MRAM) possesses many desirable properties such as nonvolatility, fast access speed, unlimited endurance, and good compatibility with CMOS fabrication process. ITRS has highlighted the…

A Full-Sensing-Margin Dual-Reference Sensing Scheme for Deeply-Scaled STT-RAM Open

He Zhang, Wang Kang, Youguang Zhang, Meng‐Fan Chang, Weisheng Zhao · 2018

Spin transfer torque-random access memory (STT-RAM) has recently been regarded as one of the most promising non-volatile memory candidates for the next-generation computer architectures. However, the readability issue has become a new obst…

High Performance MRAM with Spin-Transfer-Torque and Voltage-Controlled Magnetic Anisotropy Effects Open

Hao Cai, Wang Kang, You Wang, Lírida Naviner, Jun Yang , et al. · 2017

The Internet of Things (IoTs) relies on efficient node memories to process data among sensors, cloud and RF front-end. Both mainstream and emerging memories have been developed to achieve this energy efficiency target. Spin transfer torque…

Complementary Skyrmion Racetrack Memory With Voltage Manipulation Open

Wang Kang, Chentian Zheng, Yangqi Huang, Xichao Zhang, Yan Zhou , et al. · 2016

Magnetic skyrmion holds promise as information carriers in the\nnext-generation memory and logic devices, owing to the topological stability,\nsmall size and extremely low current needed to drive it. One of the most\npotential applications…

Corrigendum: Spintronic logic design methodology based on spin Hall effect-driven magnetic tunnel junctions (2016 <i>J. Phys. D: Appl. Phys</i>. 49 065008) Open

Wang Kang, Zhaohao Wang, Youguang Zhang, Jacques‐Olivier Klein, Weifeng Lv , et al. · 2016

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