Weibing Hao
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View article: Reliability of 1.5 × 1.5 mm<sup>2</sup><b>β</b>‐Ga<sub>2</sub>O<sub>3</sub> Power Diodes and Application in DC–DC Converter
Reliability of 1.5 × 1.5 mm<sup>2</sup><b>β</b>‐Ga<sub>2</sub>O<sub>3</sub> Power Diodes and Application in DC–DC Converter Open
High breakdown voltage and exceptional robustness make β‐Ga 2 O 3 power devices a key focus of current research. Despite growing attention to the reliability of β‐Ga 2 O 3 devices, systematic studies are still limited, and comparative anal…
View article: High breakdown voltage of 1.3 kV and low turn-on voltage of 0.48 V β-Ga<sub>2</sub>O<sub>3</sub> heterojunction barrier Schottky diode with tungsten Schottky contact
High breakdown voltage of 1.3 kV and low turn-on voltage of 0.48 V β-Ga<sub>2</sub>O<sub>3</sub> heterojunction barrier Schottky diode with tungsten Schottky contact Open
β-Ga 2 O 3 power diodes were expected to possess low turn-on voltage ( V on ), low reverse leakage ( J R ), and high blocking capability for low power losses. In this work, a low V on (0.48 V) β-Ga 2 O 3 heterojunction barrier Schottky dio…
View article: 8.7 A/700 V β-Ga<sub>2</sub>O<sub>3</sub> Schottky barrier diode demonstrated by oxygen annealing combined with self-aligned mesa termination
8.7 A/700 V β-Ga<sub>2</sub>O<sub>3</sub> Schottky barrier diode demonstrated by oxygen annealing combined with self-aligned mesa termination Open
β -Ga 2 O 3 Schottky barrier diodes (SBDs) with low-defect epitaxial surface and effective termination are essential for realizing excellent blocking characteristics. This work systematically studied oxygen annealing at various temperature…
View article: Vertical GaN Schottky Barrier Diode With Hybrid P-NiO Junction Termination Extension
Vertical GaN Schottky Barrier Diode With Hybrid P-NiO Junction Termination Extension Open
Selective-area p-type doping has been regarded as one of the primary challenges in vertical GaN junction-based power devices. Nickel oxide (NiO), serving as a natural p-type semiconductor without the requirement for sophisticated activatio…
View article: 2.7 kV Low Leakage Vertical PtO<sub>x</sub>/<i>β</i>-Ga<sub>2</sub>O<sub>3</sub> Schottky Barrier Diodes With Self-Aligned Mesa Termination
2.7 kV Low Leakage Vertical PtO<sub>x</sub>/<i>β</i>-Ga<sub>2</sub>O<sub>3</sub> Schottky Barrier Diodes With Self-Aligned Mesa Termination Open
In this study, we fabricated superb β-Ga 2 O 3 Schottky barrier diodes (SBDs) with high breakdown voltage ( V br ) and low leakage through combining platinum oxide (PtO x ) and anodic self-aligned mesa termination (SAMT). The PtO x that fo…
View article: -GaO Field Plate Schottky Barrier Diode With Superb Reverse Recovery for High-Efficiency DC–DC Converter<i/> <sub/> <sub/>
-GaO Field Plate Schottky Barrier Diode With Superb Reverse Recovery for High-Efficiency DC–DC Converter<i/> <sub/> <sub/> Open
β-Ga2O3 Schottky barrier diodes with field plate (FP-SBDs) are fabricated and their SPICEcompatible model are constructed for double-pulse test circuit and DC-DC boost converter simulations. The reverse recovery time () of the β-Ga2O3 SBD …
View article: Toward emerging gallium oxide semiconductors: A roadmap
Toward emerging gallium oxide semiconductors: A roadmap Open
Owing to the advantages of ultra-wide bandgap and rich material systems, gallium oxide (Ga2O3) has emerged as a highly viable semiconductor material for new researches. This article mainly focuses on the growth processes, material characte…