Wen-Hsin Chang
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View article: Impact of diabetes mellitus on one-year outcomes of bioresorbable versus durable polymer drug-eluting stents in patients undergoing percutaneous coronary intervention following rotational atherectomy: Results from a large prospective registry
Impact of diabetes mellitus on one-year outcomes of bioresorbable versus durable polymer drug-eluting stents in patients undergoing percutaneous coronary intervention following rotational atherectomy: Results from a large prospective registry Open
View article: Immune suppression in MTAP-deficient cancers via glutamate metabolism and CXCL10 downregulation
Immune suppression in MTAP-deficient cancers via glutamate metabolism and CXCL10 downregulation Open
Background Immune checkpoint inhibitors (ICIs) have transformed cancer therapy; however, their efficacy remains limited in certain tumor subtypes, including those deficient in methylthioadenosine phosphorylase (MTAP). MTAP-deficient cancer…
View article: Urinary Volatile Organic Compounds (VOC) Are Associated with All-Cause Mortality Risk in Individuals with Diabetes: A Longitudinal Analysis of NHANES
Urinary Volatile Organic Compounds (VOC) Are Associated with All-Cause Mortality Risk in Individuals with Diabetes: A Longitudinal Analysis of NHANES Open
Background Exposure to volatile organic compounds (VOCs) has been implicated in diabetes mellitus (DM). However, the impacts of VOCs on mortality in patients with DM remains unclear. Methods This retrospective study utilized data from the …
View article: Structural and Electric Characterization of Sputtered Pt/WSe<sub>2</sub> Contacts toward High-Performance 2D p-FETs
Structural and Electric Characterization of Sputtered Pt/WSe<sub>2</sub> Contacts toward High-Performance 2D p-FETs Open
For high-performance p-type field-effect transistors (FETs) based on two-dimensional (2D) materials, the use of Pt as the contact metal, with its high work function, is advantageous for effective hole injection into the 2D channel. However…
View article: Emerging Nanotechnology Strategies for Obesity Therapy
Emerging Nanotechnology Strategies for Obesity Therapy Open
With the rising prevalence of obesity worldwide, the condition and its associated complications have become a significant public health challenge. The emergence of nanotechnology presents new opportunities for obesity treatment by enabling…
View article: Realization of ideal Ohmic contact to <i>n</i>-Ge: The key roles of Ge-Bi-Te for quasi-van der Waals interface formation
Realization of ideal Ohmic contact to <i>n</i>-Ge: The key roles of Ge-Bi-Te for quasi-van der Waals interface formation Open
The feasibility of Bi2Te3 as S/D contact for n-Ge has been investigated. After thermal treatment at 400 °C, the formation of Ge1−xBi2+xTe4 (GBT) ternary compound and the realization of the quasi-van der Waals interface are verified from x-…
View article: Association between exposure to volatile organic compounds and female infertility: An NHANES analysis
Association between exposure to volatile organic compounds and female infertility: An NHANES analysis Open
Our study highlights a significant association between specific urinary VOC metabolites and an increased likelihood of infertility in women. While causality cannot be conclusively determined, the findings offer an initial insight into the …
View article: Excess Oxygen Modulation Through Channel Thickness Scaling and Annealing Ambient for AlOx-Passivated Ultrathin InOx FETs
Excess Oxygen Modulation Through Channel Thickness Scaling and Annealing Ambient for AlOx-Passivated Ultrathin InOx FETs Open
View article: Ge<sub>0.75</sub>Sn<sub>0.25</sub> on insulator metal-semiconductor-metal photodetector by layer transfer technique
Ge<sub>0.75</sub>Sn<sub>0.25</sub> on insulator metal-semiconductor-metal photodetector by layer transfer technique Open
The Ge 0.75 Sn 0.25 alloy, which is lattice matched to the InP, has the potential to create a high-quality GeSn-on-insulator (GeSnOI) structure for group IV optoelectronic devices. A Ge 0.75 Sn 0.25 OI metal-semiconductor-metal (MSM) photo…
View article: Mobility and stability improvements through in-situ AlO<sub>x</sub> passivation on extremely thin 2 nm-thick InO<sub>x</sub> back-gate FETs
Mobility and stability improvements through in-situ AlO<sub>x</sub> passivation on extremely thin 2 nm-thick InO<sub>x</sub> back-gate FETs Open
The effectiveness of in situ AlO x passivation on mobility and stability improvement in 2 nm-thick InO x FETs is comprehensively investigated at atomic layer deposition (ALD) temperature ranging from 100 °C to 200 °C. The chemical state of…
View article: Thermally stable Bi2Te3/WSe2 Van Der Waals contacts for pMOSFETs application
Thermally stable Bi2Te3/WSe2 Van Der Waals contacts for pMOSFETs application Open
View article: Electrical properties and band alignments of Sb<sub>2</sub>Te<sub>3</sub>/Si heterojunctions, low-barrier Sb<sub>2</sub>Te<sub>3</sub>/n-Si and high-barrier Sb<sub>2</sub>Te<sub>3</sub>/p-Si junctions
Electrical properties and band alignments of Sb<sub>2</sub>Te<sub>3</sub>/Si heterojunctions, low-barrier Sb<sub>2</sub>Te<sub>3</sub>/n-Si and high-barrier Sb<sub>2</sub>Te<sub>3</sub>/p-Si junctions Open
We investigated the electrical junction properties of the layered Sb 2 Te 3 film formed on Si substrates. The current−voltage characteristics of the Sb 2 Te 3 / n -Si heterojunction showed an ohmic properties, whereas the Sb 2 Te 3 / p -Si…
View article: Characterization of band alignment at a metal–MoS<sub>2</sub> interface by Kelvin probe force microscopy
Characterization of band alignment at a metal–MoS<sub>2</sub> interface by Kelvin probe force microscopy Open
Transition metal dichalcogenides, such as MoS 2 , have garnered considerable attention because of their significant potential in device applications. A limiting factor in their development is the formation of a Schottky barrier with strong…
View article: Effects of bendable P3CT polymers layer on the photovoltaic performance of perovskite solar cells
Effects of bendable P3CT polymers layer on the photovoltaic performance of perovskite solar cells Open
We report on the formation of bendable and edge-on poly[3-(4-carboxybutyl)thiophene-2,5-diyl] (P3CT) polymers thin layer used as a hole modification layer (HML) in the inverted perovskite solar cell. The aggregations of 2D layer-like P3CT …
View article: Data from Amiloride Modulates Alternative Splicing in Leukemic Cells and Resensitizes <i>Bcr-Abl</i>T315I Mutant Cells to Imatinib
Data from Amiloride Modulates Alternative Splicing in Leukemic Cells and Resensitizes <i>Bcr-Abl</i>T315I Mutant Cells to Imatinib Open
The antihypertensive drug amiloride is being considered as a tactic to improve cancer therapy including that for chronic myelogenous leukemia. In this study, we show that amiloride modulates the alternative splicing of various cancer genes…
View article: Data from Amiloride Modulates Alternative Splicing in Leukemic Cells and Resensitizes <i>Bcr-Abl</i>T315I Mutant Cells to Imatinib
Data from Amiloride Modulates Alternative Splicing in Leukemic Cells and Resensitizes <i>Bcr-Abl</i>T315I Mutant Cells to Imatinib Open
The antihypertensive drug amiloride is being considered as a tactic to improve cancer therapy including that for chronic myelogenous leukemia. In this study, we show that amiloride modulates the alternative splicing of various cancer genes…
View article: Supplementary Figure 1 from Amiloride Modulates Alternative Splicing in Leukemic Cells and Resensitizes <i>Bcr-Abl</i>T315I Mutant Cells to Imatinib
Supplementary Figure 1 from Amiloride Modulates Alternative Splicing in Leukemic Cells and Resensitizes <i>Bcr-Abl</i>T315I Mutant Cells to Imatinib Open
Supplementary Figure 1 from Amiloride Modulates Alternative Splicing in Leukemic Cells and Resensitizes Bcr-AblT315I Mutant Cells to Imatinib
View article: Supplementary Figure 1 from Amiloride Modulates Alternative Splicing in Leukemic Cells and Resensitizes <i>Bcr-Abl</i>T315I Mutant Cells to Imatinib
Supplementary Figure 1 from Amiloride Modulates Alternative Splicing in Leukemic Cells and Resensitizes <i>Bcr-Abl</i>T315I Mutant Cells to Imatinib Open
Supplementary Figure 1 from Amiloride Modulates Alternative Splicing in Leukemic Cells and Resensitizes Bcr-AblT315I Mutant Cells to Imatinib
View article: Supplementary Table 1 from Amiloride Modulates Alternative Splicing in Leukemic Cells and Resensitizes <i>Bcr-Abl</i>T315I Mutant Cells to Imatinib
Supplementary Table 1 from Amiloride Modulates Alternative Splicing in Leukemic Cells and Resensitizes <i>Bcr-Abl</i>T315I Mutant Cells to Imatinib Open
Supplementary Table 1 from Amiloride Modulates Alternative Splicing in Leukemic Cells and Resensitizes Bcr-AblT315I Mutant Cells to Imatinib
View article: Supplementary Table 1 from Amiloride Modulates Alternative Splicing in Leukemic Cells and Resensitizes <i>Bcr-Abl</i>T315I Mutant Cells to Imatinib
Supplementary Table 1 from Amiloride Modulates Alternative Splicing in Leukemic Cells and Resensitizes <i>Bcr-Abl</i>T315I Mutant Cells to Imatinib Open
Supplementary Table 1 from Amiloride Modulates Alternative Splicing in Leukemic Cells and Resensitizes Bcr-AblT315I Mutant Cells to Imatinib
View article: Sb<sub>2</sub>Te<sub>3</sub>/MoS<sub>2</sub> Van der Waals Junctions with High Thermal Stability and Low Contact Resistance
Sb<sub>2</sub>Te<sub>3</sub>/MoS<sub>2</sub> Van der Waals Junctions with High Thermal Stability and Low Contact Resistance Open
Two‐dimensional transition metal dichalcogenides (TMDCs) demonstrate great potential in nanoelectronics devices owing to their high carrier mobility in the atomically thin channel regime. However, high contact resistance between source/dra…
View article: Discovery of a metastable van der Waals semiconductor <i>via</i> polymorphic crystallization of an amorphous film
Discovery of a metastable van der Waals semiconductor <i>via</i> polymorphic crystallization of an amorphous film Open
Here, we report on the growth of GeTe 2 thin films, a metastable phase. The GeTe 2 film was found to be a semiconductor with a layered structure.
View article: Conference Author Index
Conference Author Index Open
View article: Surface bonding state of germanium via cyclic dry treatments using plasma of hydrogen iodine and pure oxygen gases
Surface bonding state of germanium via cyclic dry treatments using plasma of hydrogen iodine and pure oxygen gases Open
The effect of HI and O 2 plasma treatments on a Ge surface is studied by X-ray photoelectron spectroscopy. Ge oxide on a Ge surface can be effectively removed at room temperature by remote HI plasma in inductively coupled plasma reactive i…
View article: Do ESG-Linked Loans Enhance the Credibility of ESG Disclosures?
Do ESG-Linked Loans Enhance the Credibility of ESG Disclosures? Open
View article: Ultrathin MoS₂-Channel FeFET Memory With Enhanced Ferroelectricity in HfZrO₂ and Body-Potential Control
Ultrathin MoS₂-Channel FeFET Memory With Enhanced Ferroelectricity in HfZrO₂ and Body-Potential Control Open
We have experimentally demonstrated memory operation of a HfO2-based ferroelectric FET (FeFET) with an ultrathin MoS2 channel and bottom-gate structure. ZrO2 seed layer enhances ferroelectricity in HfZrO
View article: Low thermal budget epitaxial lift off (ELO) for Ge (111)-on-insulator structure
Low thermal budget epitaxial lift off (ELO) for Ge (111)-on-insulator structure Open
Germanium-on-insulator (GeOI) structures with a surface orientation of (111) have been successfully fabricated by using low thermal budget epitaxial-lift-off (ELO) technology via direct bonding and selective etching. The material character…
View article: Growth of MoS2–Nb-doped MoS2 lateral homojunctions: A monolayer <i>p</i>–<i>n</i> diode by substitutional doping
Growth of MoS2–Nb-doped MoS2 lateral homojunctions: A monolayer <i>p</i>–<i>n</i> diode by substitutional doping Open
Monolayer transition metal dichalcogenides (TMDs) have been considered as promising materials for various next-generation semiconductor devices. However, carrier doping techniques for TMDs, which are important for device fabrication, have …
View article: Conference Author Index
Conference Author Index Open
View article: SWIR Detection of Front Side Illumination InGaAs PhotoFETs on Si Substrate through Layer Transfer Technology
SWIR Detection of Front Side Illumination InGaAs PhotoFETs on Si Substrate through Layer Transfer Technology Open
InGaAs photo field-effect transistors (photoFETs) on Si is one of the promising candidates for a high responsivity Short-Wave Infra-Red (SWIR) photodetector toward monolithic integration with Si-LSI. We have demonstrated InGaAs photoFETs i…