Kai Cheng
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View article: Internet use as a moderator between adverse childhood experiences and cognitive function in middle-aged and older adults: A cross-sectional study
Internet use as a moderator between adverse childhood experiences and cognitive function in middle-aged and older adults: A cross-sectional study Open
View article: Depressive Symptoms and Osteoporosis in Middle-Aged and Older Adults: A Cross-Sectional Analysis of NHANES and HRS Data
Depressive Symptoms and Osteoporosis in Middle-Aged and Older Adults: A Cross-Sectional Analysis of NHANES and HRS Data Open
Background & Aims Depression and osteoporosis are common among middle-aged and older adults, both impacting morbidity and quality of life. Their shared risk factors suggest a potential link, but this relationship remains underexplored. Thi…
View article: Impact of first ambulation time on unilateral biportal endoscopy in lumbar disc herniation: a systematic review and meta-analysis
Impact of first ambulation time on unilateral biportal endoscopy in lumbar disc herniation: a systematic review and meta-analysis Open
Background: This study aimed to evaluate the effect of early versus late postoperative ambulation on clinical outcomes and complications following unilateral biportal endoscopy (UBE) for lumbar disc herniation. Methods: A systematic review…
View article: CO<sub>2</sub>-Controlled Water Injection in Carbonate Gas Reservoirs: An Effective Approach to Improve Production
CO<sub>2</sub>-Controlled Water Injection in Carbonate Gas Reservoirs: An Effective Approach to Improve Production Open
In the development of edgewater-type carbonate gas reservoirs, the challenge posed by water flooding in production wells is a significant concern. This study investigates the potential of CO2 injection as a solution for water co…
View article: Fail-Safe Topology Optimization Using Damage Scenario Filtering
Fail-Safe Topology Optimization Using Damage Scenario Filtering Open
Within the framework of isotropic materials, this paper introduces an efficient topology optimization method that incorporates fail-safe design considerations using a penalty function approach. Existing methods are either computationally e…
View article: Application and Properties of Polyglycolic Acid as a Degradation Agent in MPU/HNBR Degradable Elastomer Composites for Dissolvable Frac Plugs
Application and Properties of Polyglycolic Acid as a Degradation Agent in MPU/HNBR Degradable Elastomer Composites for Dissolvable Frac Plugs Open
In this research, fully degradable elastomeric sealing materials were developed to enhance the environmental sustainability of oil and gas extraction. The modification of millable polyurethane rubber (MPU) with polyglycolic acid/hydrogenat…
View article: Research on Co2 Injection for Water Control and Enhanced Nature Gas Recovery in Heterogeneous Carbonate Reservoirs
Research on Co2 Injection for Water Control and Enhanced Nature Gas Recovery in Heterogeneous Carbonate Reservoirs Open
View article: Fail-Safe Topology Optimization Using Damage Scenarios Filtering
Fail-Safe Topology Optimization Using Damage Scenarios Filtering Open
This paper presents an efficient topology optimization approach considering fail-safe requirements in the framework of the solid isotropic material with penalization method. Existing methods either are computationally extremely expensive o…
View article: Wafer-scale organic-on-III-V monolithic heterogeneous integration for active-matrix micro-LED displays
Wafer-scale organic-on-III-V monolithic heterogeneous integration for active-matrix micro-LED displays Open
View article: Implanted Guard Ring Edge Termination With Avalanche Capability for Vertical GaN Devices
Implanted Guard Ring Edge Termination With Avalanche Capability for Vertical GaN Devices Open
Edge termination is the key building block in power devices to enable near-ideal, avalanche breakdown voltage (BV). This work presents the design, fabrication, and physics of a GaN guard ring (GR) edge termination formed by selective-area …
View article: High Power Figure‐of‐Merit, 10.6‐kV AlGaN/GaN Lateral Schottky Barrier Diode with Single Channel and Sub‐100‐µm Anode‐to‐Cathode Spacing (Small 37/2022)
High Power Figure‐of‐Merit, 10.6‐kV AlGaN/GaN Lateral Schottky Barrier Diode with Single Channel and Sub‐100‐µm Anode‐to‐Cathode Spacing (Small 37/2022) Open
Schottky Barrier Diodes GaN is a promising candidate for next-generation power electronic devices, but its potential is far from being realized. In article number 2107301, Peng Chen, Rong Zhang, Youdou Zheng, and co-workers demonstrate a h…
View article: Investigation on the Influence of Ohmic Structure on Channel-to-Channel Coupling Effect in InAlN/GaN Double Channel HEMTs
Investigation on the Influence of Ohmic Structure on Channel-to-Channel Coupling Effect in InAlN/GaN Double Channel HEMTs Open
In this paper, the impact of ohmic structure on channel-to-channel (C2C) coupling effect in InAlN/GaN double channel (DC) HEMTs is systematically analyzed and studied. For the un-recessed ohmic structure, the electrons in the upper channel…
View article: Kilovolt Tri-Gate GaN Junction HEMTs with High Thermal Stability
Kilovolt Tri-Gate GaN Junction HEMTs with High Thermal Stability Open
The lack of reports on the high-temperature performance of tri-gate GaN power HEMTs has raised serious concern on their competitiveness. This work demonstrates the first normally-off tri-gate GaN HEMT that can block kilovolts at 150 °C and…
View article: High power Figure-of-Merit, 10.6-kV AlGaN/GaN lateral Schottky barrier diode with single channel and sub-100-{\mu}m anode-to-cathode spacing
High power Figure-of-Merit, 10.6-kV AlGaN/GaN lateral Schottky barrier diode with single channel and sub-100-{\mu}m anode-to-cathode spacing Open
GaN-based lateral Schottky diodes (SBDs) have attracted great attention for high-power applications due to its combined high electron mobility and large critical breakdown field. However, the breakdown voltage (BV) of the SBDs are far from…
View article: High power Figure-of-Merit, 10.6-kV AlGaN/GaN lateral Schottky barrier diode with single channel and sub-100-μm anode-to-cathode spacing
High power Figure-of-Merit, 10.6-kV AlGaN/GaN lateral Schottky barrier diode with single channel and sub-100-μm anode-to-cathode spacing Open
GaN-based lateral Schottky diodes (SBDs) have attracted great attention for high-power applications due to its combined high electron mobility and large critical breakdown field. However, the breakdown voltage (BV) of the SBDs are far from…
View article: Improved Gate Reliability of p-GaN Gate HEMTs by Gate Doping Engineering
Improved Gate Reliability of p-GaN Gate HEMTs by Gate Doping Engineering Open
We present a novel p-GaN gate HEMT structure with reduced hole concentration near the Schottky interface by doping engineering in MOCVD, which aims at lowering the electric field across the gate. By employing an additional unintentionally …
View article: High-Performance Enhancement-Mode AlGaN/GaN Multi-Channel Power Transistors
High-Performance Enhancement-Mode AlGaN/GaN Multi-Channel Power Transistors Open
AlGaN/GaN devices have shown outstanding potential for power conversion applications. However, despite the recent progress, their performance is still far from what the material can offer in terms of on-resistance and breakdown voltage. To…
View article: Multi-channel nanowire devices for efficient power conversion
Multi-channel nanowire devices for efficient power conversion Open
View article: Self-Align-Gated GaN Field Emitter Arrays Sharpened by a Digital Etching Process
Self-Align-Gated GaN Field Emitter Arrays Sharpened by a Digital Etching Process Open
Department of Defense (DoD)
View article: GaN-on-silicon transistors with reduced current collapse and improved blocking voltage by means of local substrate removal
GaN-on-silicon transistors with reduced current collapse and improved blocking voltage by means of local substrate removal Open
We report on the demonstration of low trapping effects above 1200 V of GaN-on-silicon transistors using a local substrate removal (LSR) followed by a thick backside ultra-wide-bandgap AlN deposition. Substrate ramp measurements show reduce…
View article: Characterization of temporal soft tissue space to aid the design of implants aimed at restoring function in facial paralysis
Characterization of temporal soft tissue space to aid the design of implants aimed at restoring function in facial paralysis Open
Aim: Facial paralysis inflicts devastating functional and aesthetic deficits. Several solutions are being developed, including implantable bionics to correct paralytic lagophthalmos. The temporal fossa has been postulated to be a suitable …
View article: Conformal Passivation of Multi-Channel GaN Power Transistors for Reduced Current Collapse
Conformal Passivation of Multi-Channel GaN Power Transistors for Reduced Current Collapse Open
Multi-channel power devices, in which several AlGaN/GaN layers are stacked to achieve multiple two-dimensional electron gases (2DEGs), have recently led to a significant increase in the device conductivity while maintaining high breakdown …
View article: Tri-gate GaN junction HEMT
Tri-gate GaN junction HEMT Open
This work presents a tri-gate GaN junction high-electron-mobility transistor (JHEMT) concept in which the p–n junction wraps around the AlGaN/GaN fins in the gate region. This tri-gate JHEMT differs from all existing GaN FinFETs and tri-ga…
View article: GaN Nanowire Field Emitters with a Self-Aligned Gate Process
GaN Nanowire Field Emitters with a Self-Aligned Gate Process Open
Electron devices based on field emitters (FE) are promising for harsh-environments and high-frequency electronics thanks to their radiation hardness and scattering-free electron transport. Si field emitters with a sub-10 nm tip radius and …
View article: 1200 V Multi-Channel Power Devices with 2.8 Ω•mm ON-Resistance
1200 V Multi-Channel Power Devices with 2.8 Ω•mm ON-Resistance Open
Here we report novel multi-channel AlGaN/GaN MOSHEMTs with high breakdown voltage (V BR ) and low ON-resistance (R ON ). The multi-channel structure was judiciously designed to yield a small sheet resistance (R s ) of 80 Ω/sq using only fo…
View article: Multi-Channel Tri-Gate GaN Power Schottky Diodes With Low ON-Resistance
Multi-Channel Tri-Gate GaN Power Schottky Diodes With Low ON-Resistance Open
POWERLAB
View article: Multi-channel tri-gate normally-on/off AlGaN/GaN MOSHEMTs on Si substrate with high breakdown voltage and low ON-resistance
Multi-channel tri-gate normally-on/off AlGaN/GaN MOSHEMTs on Si substrate with high breakdown voltage and low ON-resistance Open
In this work, we present multi-channel tri-gate AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOSHEMTs) for high-voltage applications. A heterostructure with multiple AlGaN/GaN layers was used to form five paralle…
View article: 10 A/567 V normally off p‐GaN gate HEMT with high‐threshold voltage and low‐gate leakage current
10 A/567 V normally off p‐GaN gate HEMT with high‐threshold voltage and low‐gate leakage current Open
Normally off p‐gallium nitride (GaN) gate high‐electron‐mobility transistors (HEMTs) on silicon substrate were fabricated with hydrogen plasma treatment technology, which features a high‐resistivity cap layer (HRCL) at the access region. W…
View article: 820-V GaN-on-Si Quasi-Vertical p-i-n Diodes With BFOM of 2.0 GW/cm2
820-V GaN-on-Si Quasi-Vertical p-i-n Diodes With BFOM of 2.0 GW/cm2 Open
In this letter, we demonstrate GaN-on-Si p-i-n diodes with high breakdown voltage and state-of-the-art Baliga's figure of merit (BFOM) among GaN-on-Si vertical devices. The growth and doping of the GaN drift layer were optimized, leading t…
View article: Investigation of AlGaN/GaN HEMTs degradation with gate pulse stressing at cryogenic temperature
Investigation of AlGaN/GaN HEMTs degradation with gate pulse stressing at cryogenic temperature Open
Degradation on DC characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) after applying pulsed gate stress at cryogenic temperatures is presented in this paper. The nitrogen vacancy near to the AlGaN/GaN interface leads to…