Explanipedia

Data-driven strategy for size-controllable growth of tin(II) sulfide nanoplates via machine learning Open

Junliang Liu, Songqing Zhang, Wenwu Pan, Yongling Ren, Wen Lei · 2025

Large-amplitude oscillations of a quiescent filament excited by an extreme-ultraviolet wave Open

Wenwu Pan, Q M Zhang, Yuping Qiu · 2025

In this paper, we carry out multiwavelength observations of simultaneous longitudinal and transverse oscillations of a quiescent filament excited by an extreme ultraviolet (EUV) wave on 2023 February 17. A hot channel eruption generates an…

Large-amplitude Oscillations of a Quiescent Filament Excited by an Extreme-ultravioletWave Open

Wenwu Pan, Q. M. Zhang, Ye Qiu · 2025

In this paper, we carry out multiwavelength observations of simultaneous longitudinal and transverse oscillations of a quiescent filament excited by an extreme-ultraviolet (EUV) wave on 2023 February 17. A hot channel eruption generates an…

Design and Simulation of Metalens Arrays for Enhanced MWIR Imaging Array Performance Open

Wenwu Pan, Gilberto A. Umana‐Membreno, Nima Dehdashti Akhavan, Hark Hoe Tan, Dragomir N. Neshev , et al. · 2025

Superlattice Engineering on 2D Bi2Te3‐Sb2Te3 Chalcogenides Open

Han Wang, Songqing Zhang, Huijia Luo, Wenwu Pan, Zekai Zhang , et al. · 2025

As a focal point in materials science, 2D superlattices, comprising periodically arranged nanostructures, have emerged as promising platforms for engineering, optoelectronic, and quantum phenomena. In this work, an innovative approach is s…

Liquid Metal-Exfoliated SnO$_2$-Based Mixed-dimensional Heterostructures for Visible-to-Near-Infrared Photodetection Open

Shimul Kanti Nath, Nitu Syed, Wenwu Pan, Yu Yang, Dawei Liu , et al. · 2025

Ultra-thin two-dimensional (2D) materials have gained significant attention for making next-generation optoelectronic devices. Here, we report a large-area heterojunction photodetector fabricated using a liquid metal-printed 2D $\text{SnO}…

Ultrafast photoconductivity dynamics in narrow-gap HgCdTe films Open

Nils B. Refvik, David N. Purschke, Charles E. Jensen, Wenwu Pan, Howe R. J. Simpson , et al. · 2024

Mercury cadmium telluride (Hg1−xCdxTe or MCT) is the premier material for infrared detection. However, despite its importance, studies exploring the ultrafast photoresponse in this semiconductor alloy are limited. Here, we use time-resolve…

Growth of Hg0.7Cd0.3Te on Van Der Waals Mica Substrates via Molecular Beam Epitaxy Open

Shuo Ma, Wenwu Pan, Xiao Sun, Zekai Zhang, Renjie Gu , et al. · 2024

In this paper, we present a study on the direct growth of Hg0.7Cd0.3Te thin films on layered transparent van der Waals mica (001) substrates through weak interface interaction through molecular beam epitaxy. The preferred orientation for g…

A Case Study of 2D Bi2O2Se Nanoplate Near‐Infrared Photodetectors from the Perspective of Practical Applications Open

Han Wang, Ze Zhang, Huijia Luo, Songqing Zhang, Wenwu Pan , et al. · 2024

Over the past several decades infrared (IR) photodetectors have received wide attention due to their important applications. 2D materials, distinguished by their unique electronic structures, ultimate dimensional confinement, and robust li…

Microcavity‐Enhanced Polarization Photodetection in Antimony Selenide Nanotube‐Based Near‐Infrared Photodetectors Open

Songqing Zhang, Khalil As’ham, Han Wang, Wenwu Pan, Ibrahim Al‐Ani , et al. · 2024

This study presents the polarization photodetection enhancement in Sb 2 Se 3 nanotube (NT)‐based near‐infrared (NIR) photodetectors through simulation‐based and experimental investigations. High‐quality single‐crystal Sb 2 Se 3 NTs are gro…

Optically Tunable Electrical Oscillations in Oxide‐Based Memristors for Neuromorphic Computing Open

Shimul Kanti Nath, Sujan Kumar Das, Sanjoy Kumar Nandi, Xi Chen, Camilo Verbel Marquez , et al. · 2024

The application of hardware‐based neural networks can be enhanced by integrating sensory neurons and synapses that enable direct input from external stimuli. This work reports direct optical control of an oscillatory neuron based on volati…

Determination of elasto-plastic properties of semiconducting Hg1-xCdxSe using nanoindentation Open

Zekai Zhang, Wenwu Pan, Mariusz Martyniuk, Shuo Ma, L. Faraone , et al. · 2023

The nanoindentation technique has been applied to study the elasto-plastic properties and characteristics of Hg1-xCdxSe grown on GaSb (2 1 1)B substrates with molecular beam epitaxy. The Young's modulus of Hg1-xCdxSe samples is determined …

Structural properties and defect formation mechanisms in MBE-grown HgCdTe on InSb (211)B substrates Open

Wenwu Pan, Shuo Ma, Xiao Sun, Renjie Gu, L. Faraone , et al. · 2023

This work investigates the structural properties of HgCdTe thin films grown on InSb (211)B substrates using molecular beam epitaxy (MBE). The Cd composition of thin films is accurately determined using non-destructive approaches based on x…

Structural properties of MBE-grown CdTe (133)B buffer layers on GaAs (211)B substrates with CdZnTe/CdTe superlattice-based dislocation filtering layers Open

Wenwu Pan, Shuo Ma, Xiao Sun, Shimul Kanti Nath, Songqing Zhang , et al. · 2023

The ever-present demand for high-performance HgCdTe infrared detectors with larger array size and lower cost than currently available technologies based on lattice-matched CdZnTe (211)B substrates has fuelled research into heteroepitaxial …

Effect of Lidar Receiver Field of View on UAV Detection Open

Zijian Chen, Miao Yu, Dan Tang, Yang Hao, Wenwu Pan · 2022

Researchers have shown that single-photon light detection and ranging (lidar) is highly sensitive and has a high temporal resolution. Due to the excellent beam directivity of lidar, most applications focus on ranging and imaging. Here, we …

Van der Waals Epitaxy of HgCdTe Thin Films for Flexible Infrared Optoelectronics Open

Wenwu Pan, Zekai Zhang, Renjie Gu, Shuo Ma, L. Faraone , et al. · 2022

Van der Waals epitaxial (vdW) growth of semiconductor thin films on 2D layered substrates has recently attracted considerable attention since it provides a potential pathway for realizing monolithically integrated devices and flexible devi…

Defect Engineering in MBE-Grown CdTe Buffer Layers on GaAs (211)B Substrates Open

Wenwu Pan, Renjie Gu, Z. K. Zhang, Wen Lei, Gilberto A. Umana‐Membreno , et al. · 2022

Demand for high-performance HgCdTe infrared detectors with larger array size and lower cost has fuelled the heteroepitaxial growth of HgCdTe on CdTe buffer layers on lattice-mismatched alternative substrates such as Si, Ge, GaAs and GaSb. …

Polarization-Sensitive Near-Infrared Photodetectors Based on Quasi-One-Dimensional Sb2se3 Nanotubes Open

Songqing Zhang, Han Wang, Wenwu Pan, Huijia Luo, Yongling Ren , et al. · 2022

Hysteresis Effect in Two‐Dimensional Bi2Te3 Nanoplate Field‐Effect Transistors Open

Junliang Liu, Wenwu Pan, Han Wang, Zekai Zhang, Songqing Zhang , et al. · 2020

Recently, field‐effect transistors (FETs) based on two‐dimensional (2D) Bi 2 Te 3 nanoplates have attracted much attention due to their great potential for fabricating high‐performance electronic devices. However, the gating property measu…

Influence of Bi on morphology and optical properties of InAs QDs: publisher’s note Open

Lijuan Wang, Wenwu Pan, Xiren Chen, Xiaoyan Wu, Jun Shao , et al. · 2018

Erratum to: The effect of Bi composition on the electrical properties of InP1−xBi x Open

GuanNan Wei, Xing Dai, Qi Feng, Wengang Luo, YiYang Li , et al. · 2018

Influence of Bi on morphology and optical properties of InAs QDs Open

Lijuan Wang, Wenwu Pan, Xiren Chen, Xiaoyan Wu, Jun Shao , et al. · 2017

We study the tsurface morphology and photoluminescence (PL) property of InAs quantum dots (QDs) on GaAs using bismuth (Bi) in the layer prior to or after the growth of QDs. Incorporating Bi in the layer prior to the QD deposition delays th…

Electrically injected GaAsBi/GaAs single quantum well laser diodes Open

Juanjuan Liu, Wenwu Pan, Xiaoyan Wu, Chunfang Cao, Yaoyao Li , et al. · 2017

We present electrically injected GaAs/GaAsBi single quantum well laser diodes (LDs) emitting at a record long wavelength of 1141 nm at room temperature grown by molecular beam epitaxy. The LDs have excellent device performances with intern…

Nanoscale distribution of Bi atoms in InP1−xBix Open

Liyao Zhang, Mingjian Wu, Xiren Chen, Xiaoyan Wu, Erdmann Spiecker , et al. · 2017

Negative thermal quenching of below-bandgap photoluminescence in InPBi Open

Xiren Chen, Xiaoyan Wu, Yue Li, Liangqing Zhu, Wenwu Pan , et al. · 2017

This paper reports a temperature-dependent (10–280 K) photoluminescence (PL) study of below-bandgap electron-hole recombinations and anomalous negative thermal quenching of PL intensity in InP1–xBix (x = 0.019 and 0.023). Four PL features …

Electrically Pumped 1.136 mum GaAsBi/AlGaAs Quantum Well Lasers Grown by Molecular Beam Epitaxy Open

Xiaoyan Wu, Wenwu Pan, Juanjuan Liu, Yaoyao Li, Chunfang Cao , et al. · 2017

Indium Phosphide Bismide Open

Liyao Zhang, Wenwu Pan, Xiaoyan Wu, Yue Li, Shumin Wang · 2016

Indium phosphide bismide is a new member to the dilute bismide family. Since the first synthesis by molecular beam epitaxy (MBE) in 2013, it has cut a figure for its abnormal properties comparing with other dilute bismides. Bismuth (Bi) in…

Anomalous photoluminescence in InP1−xBix Open

Xiaoyan Wu, Xiren Chen, Wenwu Pan, Peng Wang, Liyao Zhang , et al. · 2016

Influence of GaAsBi Matrix on Optical and Structural Properties of InAs Quantum Dots Open

Peng Wang, Wenwu Pan, Xiaoyan Wu, Juanjuan Liu, Chunfang Cao , et al. · 2016

InAs/GaAsBi dot-in-well structures were fabricated using gas-source molecular beam epitaxy and investigated for its optical and structural properties. GaAsBi-strained buffer layer and strain reduction layer are both effective to extend the…

The identification of the dominant donors in low temperature grown InPBi materials Open

Guoqiang Wei, D. Y. Xing, Qingliang Feng, Wenqin Luo, Yu-Ren Li , et al. · 2016

Combined with magnetotransport measurements and first-principles calculations, we systematically investigated the effects of Bi incorporation on the electrical properties of the undoped InP1-xBix epilayers with 0

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