Won Jong Yoo
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View article: Quantum Phase Transitions in Graphene Coupled to a Twisted WSe <sub>2</sub> Moiré Ferroelectricity
Quantum Phase Transitions in Graphene Coupled to a Twisted WSe <sub>2</sub> Moiré Ferroelectricity Open
Sublattice symmetry in graphene governs its Dirac semimetal behavior, where electrons exhibit linear dispersion, limiting its potential for technological applications. Here, moiré ferroelectricity in twisted WSe 2 ( t ‐WSe 2 ) is exploited…
Unlocking Wavelength‐Selective Modulations of Open‐Circuit Voltage in Metal Halide Perovskite Solar Cells Open
The photovoltaic performance of metal halide perovskite solar cells often respond divergently to environmental conditions during storage. In particular, light exposure can either enhance or degrade device efficiency, yet the mechanisms und…
View article: Demonstration of Steep Switching Behavior Based on Band Modulation in WSe2 Feedback Field-Effect Transistor
Demonstration of Steep Switching Behavior Based on Band Modulation in WSe2 Feedback Field-Effect Transistor Open
Feedback field-effect transistors (FBFETs) have been studied to obtain near-zero subthreshold swings at 300 K with a high on/off current ratio ~1010. However, their structural complexity, such as an epitaxy process after an etch process fo…
View article: Topology-Driven Coulomb Drag in van der Waals Heterostructure with Broken Inversion Symmetry
Topology-Driven Coulomb Drag in van der Waals Heterostructure with Broken Inversion Symmetry Open
As Coulomb drag near charge neutrality (CN) is driven by fluctuations or inhomogeneity in charge density, the topology should play an extremely important role. Interlinking Coulomb drag and topology could reveal how the system’s nontrivial…
High‐Performance Self‐Driven Polarization‐Sensitive Imaging Photodetectors based on Fully Depleted T‐MoSe<sub>2</sub>/GeSe/B‐MoSe<sub>2</sub> Van der Waals Dual‐Heterojunction Open
New 2D materials with low‐symmetry structures aroused great interest in developing monolithic polarization‐sensitive photodetectors with small volumes, which can provide a new degree of freedom for more information in night, fog, and smoke…
Anisotropic charge transport at the metallic edge contact of ReS2 field effect transistors Open
The in-plane anisotropy of electrical conductance in two-dimensional materials has garnered significant attention due to its potential in emerging device applications, offering an additional dimension to control carrier transport in 2D dev…
Achieving Near‐Ideal Subthreshold Swing in P‐Type WSe<sub>2</sub> Field‐Effect Transistors Open
The pursuit of near‐ideal subthreshold swing ( SS ) ≈ 60 mV dec −1 is a primary driving force to realize the power‐efficient field‐effect transistors (FETs). This challenge is particularly pronounced in 2D material‐based FETs, where the pr…
View article: Link between <i>T</i>-Linear Resistivity and Quantum Criticality in Ambipolar Black Phosphorus
Link between <i>T</i>-Linear Resistivity and Quantum Criticality in Ambipolar Black Phosphorus Open
The interplay between strong Coulomb interactions and kinetic energy leads to intricate many-body competing ground states owing to quantum fluctuations in 2D electron and hole gases. However, the simultaneous observation of quantum critica…
Parafilm Enabled Rapid and Scalable Delamination/Integration of Graphene for High‐Performance Capacitive Touch Sensor Open
The high electrical conductivity and bendability of graphene makes it versatile for flexible electronic sensor applications. The fabrication of such flexible sensors necessitates two important prerequisites: defect‐free transfer of graphen…
View article: Modulation of Contact Resistance of Dual‐Gated MoS<sub>2</sub> FETs Using Fermi‐Level Pinning‐Free Antimony Semi‐Metal Contacts
Modulation of Contact Resistance of Dual‐Gated MoS<sub>2</sub> FETs Using Fermi‐Level Pinning‐Free Antimony Semi‐Metal Contacts Open
Achieving low contact resistance ( R C ) is one of the major challenges in producing 2D FETs for future CMOS technology applications. In this work, the electrical characteristics for semimetal (Sb) and normal metal (Ti) contacted MoS 2 dev…
Percolation-Based Metal–Insulator Transition in Black Phosphorus Field Effect Transistors Open
The existence of a novel phenomenon, such as the metal-insulator transition (MIT) in two-dimensional (2D) systems, affords emerging functional properties that provide new aspects for future electronics and optoelectronics. Here, we report …
Effects of Oxygen Plasma Treatment on Fermi‐Level Pinning and Tunneling at the Metal–Semiconductor Interface of WSe<sub>2</sub> FETs Open
Recently, 2D materials have been intensively investigated for their novel nanoelectronic applications; among these materials, tungsten diselenide (WSe 2 ) is attracting substantial research interest due to its high mobility, sizable bandga…
Observation of strange metal in hole-doped valley-spin insulator Open
Temperature-linear resistance at low temperatures in strange metals is an exotic characteristic of strong correlation systems, as observed in high-TC superconducting cuprates, heavy fermions, Fe-based superconductors, ruthenates, and twist…
Selective Electron Beam Patterning of Oxygen‐Doped WSe<sub>2</sub> for Seamless Lateral Junction Transistors Open
Surface charge transfer doping (SCTD) using oxygen plasma to form a p‐type dopant oxide layer on transition metal dichalcogenide (TMDs) is a promising doping technique for 2D TMDs field‐effect transistors (FETs). However, patternability of…
Fermi Level Pinning Dependent 2D Semiconductor Devices: Challenges and Prospects Open
Motivated by the high expectation for efficient electrostatic modulation of charge transport at very low voltages, atomically thin 2D materials with a range of bandgaps are investigated extensively for use in future semiconductor devices. …
Chemical Dopant‐Free Doping by Annealing and Electron Beam Irradiation on 2D Materials (Adv. Electron. Mater. 10/2021) Open
Field-Effect Transistor Chemical-free and clean doping methods for 2D semiconducting materials are developed by Min Sup Choi, Won Jong Yoo, and co-workers in article number 2100449. The p- and n-doping in 2D field-effect transistors are ob…
View article: Analytical measurements of contact resistivity in two-dimensional WSe<sub>2</sub> field-effect transistors
Analytical measurements of contact resistivity in two-dimensional WSe<sub>2</sub> field-effect transistors Open
It becomes clear that, in two-dimensional (2D) materials-based devices, sheet resistances underneath electrodes change due to a metallic contact, leading to substantial errors in determining a transfer length. Thus, the extraction of trans…
Achieving high carrier density and high mobility in graphene using monolayer tungsten oxyselenide Open
Highly doped graphene holds promise for next-generation electronic and photonic devices. However, chemical doping cannot be precisely controlled, and introduces external disorder that significantly diminishes the carrier mobility and there…
Chemical Dopant‐Free Doping by Annealing and Electron Beam Irradiation on 2D Materials Open
Doping is a key technique for forming complementary metal‐oxide‐semiconductor (CMOS) that is a basic building block for current state‐of‐the‐art semiconductor devices. However, conventional doping methods such as ion implantation are unsui…
Traps at the hBN/WSe<sub>2</sub> interface and their impact on polarity transition in WSe<sub>2</sub> Open
Semiconducting two-dimensional (2D) materials-based devices usually exhibit inferior electrical performance compared to their theoretical predictions, which is mainly attributed to the presence of high density of interfacial defect induced…
Electrical characterization of 2D materials-based field-effect transistors Open
Two-dimensional (2D) materials hold great promise for future nanoelectronics as conventional semiconductor technologies face serious limitations in performance and power dissipation for future technology nodes. The atomic thinness of 2D ma…
Photoresponsive Devices: Ultrahigh Photoresponsive Device Based on ReS<sub>2</sub>/Graphene Heterostructure (Small 45/2018) Open
In article number 1802593, Changgu Lee and co-workers develop a photodetector based on a ReS2/graphene heterostructure, which exhibits outstanding photoresponsivity, detectivity, and ultrafast responsivity due to the excellent light absorp…
Impact ionization by hot carriers in a black phosphorus field effect transistor Open
The strong Coulombic interactions in miniaturized structures can lead to efficient carrier multiplication, which is essential for many-body physics and design of efficient photonic devices beyond thermodynamic conversion limits. However, c…
High Electric Field Carrier Transport and Power Dissipation in Multilayer Black Phosphorus Field Effect Transistor with Dielectric Engineering Open
This study addresses high electric field transport in multilayer black phosphorus (BP) field effect transistors with self‐heating and thermal spreading by dielectric engineering. Interestingly, a multilayer BP device on a SiO 2 substrate e…
Organic Dye Graphene Hybrid Structures with Spectral Color Selectivity Open
This study characterizes a hybrid structure formed between graphene and organic dye molecules for use in photodetectors with spectral color selectivity. Rhodamine‐based organic dye molecules with red, green, or blue light absorption profil…