Wonryeol Yang
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View article: Ruddlesden–Popper Tin‐Based Halide Perovskite Field‐Effect Transistors
Ruddlesden–Popper Tin‐Based Halide Perovskite Field‐Effect Transistors Open
Tin‐based halide perovskites garner attention as a promising semiconducting layer material for field‐effect transistors (FETs) owing to their lower effective mass than their lead‐based counterparts. However, they suffer from low ambient st…
View article: Tin perovskite transistors and complementary circuits based on A-site cation engineering
Tin perovskite transistors and complementary circuits based on A-site cation engineering Open
Tin halide perovskites have the general chemical formula ASnX 3 , where A is a monovalent cation and X is a monovalent halide anion. These semiconducting materials can be used to fabricate p-type transistors at low cost and temperature and…