Xiangang Xu
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View article: Regulation Active Sites of Porous <scp>GaN</scp> Crystal Via <scp>Mn<sub>3</sub>O<sub>4</sub></scp> Nanosheets for Advanced High Temperature Energy Storage
Regulation Active Sites of Porous <span>GaN</span> Crystal Via <span>Mn<sub>3</sub>O<sub>4</sub></span> Nanosheets for Advanced High Temperature Energy Storage Open
Gallium nitride (GaN) single crystal with prominent electron mobility and heat resistance have great potential in the high temperature integrate electric power systems. However, the sluggish charge storage kinetics and inadequate energy de…
View article: Multi-Step junction termination extension design and simulation study for 4H-SiC Schottky barrier diode
Multi-Step junction termination extension design and simulation study for 4H-SiC Schottky barrier diode Open
This paper presents a structure for designing Junction Termination Extension (JTE) in Silicon Carbide (SiC) power devices, particularly for Schottky Barrier Diodes (SBD). The P-type island composite multi-step JTE configuration has been de…
View article: Synchrotron radiation x-ray topography applied to nitride semiconductor crystals
Synchrotron radiation x-ray topography applied to nitride semiconductor crystals Open
Gallium nitride (GaN) and aluminum nitride (AlN), as examples of third-generation semiconductors, have attracted significant interest due to their remarkable physical attributes, including a wide bandgap, high breakdown voltage, exceptiona…
View article: Advance Chemical Mechanical Polishing Technique for Gallium Nitride Substrate
Advance Chemical Mechanical Polishing Technique for Gallium Nitride Substrate Open
As the representative of substrate material, gallium nitride (GaN) has excellent mechanical properties and high thermal stability. Achieving high surface flatness is critical for subsequent epitaxial growth and device fabrication processes…
View article: Fabrication of Ohmic Contact on N-Type SiC by Laser Annealed Process: A Review
Fabrication of Ohmic Contact on N-Type SiC by Laser Annealed Process: A Review Open
In recent years, because of stringent needs in the fabrication of silicon carbide (SiC) power devices, laser annealing has been introduced to achieve local ohmic contact. In this paper, the laser annealing research for the ohmic contact pr…
View article: Gallium Nitride Based Electrode for High‐Temperature Supercapacitors
Gallium Nitride Based Electrode for High‐Temperature Supercapacitors Open
Gallium nitride (GaN) single crystal, as the representative of wide‐band semiconductors, has great prospects for high‐temperature energy storage, of its splendid power output, robust temperature stability, and superior carrier mobility. No…
View article: Localization Features of Carrier Emission Recombination in Deep-ultraviolet AlGaN-based Multiple Quantum Well Structure
Localization Features of Carrier Emission Recombination in Deep-ultraviolet AlGaN-based Multiple Quantum Well Structure Open
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View article: Fabrication of 8-inch N-type 4H-SiC Single Crystal Substrate with Low Dislocation Density
Fabrication of 8-inch N-type 4H-SiC Single Crystal Substrate with Low Dislocation Density Open
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View article: Effect of High-temperature Annealing on AlN Crystal Grown by PVT Method
Effect of High-temperature Annealing on AlN Crystal Grown by PVT Method Open
In the process of PVT growth of AlN crystals, there is difficult to maintain ideal thermodynamic equilibrium conditions, causing crystal defects being inevitably generated.High temperature annealing technology has received much attention d…
View article: Improved Electrical Performance of InAlN/GaN High Electron Mobility Transistors with Post Bis(trifluoromethane) Sulfonamide Treatment
Improved Electrical Performance of InAlN/GaN High Electron Mobility Transistors with Post Bis(trifluoromethane) Sulfonamide Treatment Open
An enhancement of the electrical performance of the InAlN/GaN high electron mobility transistors (HEMTs) is demonstrated by the incorporation of post bis(trifluoromethane) sulfonamide (TFSI) treatment. The surface treatment of TFSI solutio…
View article: Temperature-Dependent Properties of Graphene on SiC Substrates for Triboelectric Nanogenerators
Temperature-Dependent Properties of Graphene on SiC Substrates for Triboelectric Nanogenerators Open
Graphene has excellent properties such as ultra-high electrical conductivity, high carrier mobility, and thermal conductivity, with a promising application in the field of triboelectric nanogenerators (TENGs). We present a systemic investi…