Xincun Peng
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View article: Fabry-Perot resonance cavity for ultra-thin GaAs negative electron affinity photocathodes
Fabry-Perot resonance cavity for ultra-thin GaAs negative electron affinity photocathodes Open
Electron accelerator and photodetector require negative electron affinity photocathode (NEA-PC) with high quantum efficiency ( QE ), short response time and low mean transverse energy ( MTE ). Finding a NEA-PC that simultaneously meets all…
View article: Simulation Analysis of 35 Mev/ 2 Ma@ 70 Kw Electron Accelerator Driven White Neutron Source Target
Simulation Analysis of 35 Mev/ 2 Ma@ 70 Kw Electron Accelerator Driven White Neutron Source Target Open
View article: Broadband Omnidirectional Infrared Nanophotonic Spectral Controller for Gainassb Thermophotovoltaic Cell
Broadband Omnidirectional Infrared Nanophotonic Spectral Controller for Gainassb Thermophotovoltaic Cell Open
View article: Theoretical modeling and analyzing structural characteristics of AlGaAs/GaAs negative electron affinity array cathode with optically and electrically injected variable bandgap
Theoretical modeling and analyzing structural characteristics of AlGaAs/GaAs negative electron affinity array cathode with optically and electrically injected variable bandgap Open
In order to obtain high emission current efficiency of the AlGaAs/GaAs NEA array cathode, this array cathode has two ways to form electron emission, i.e. optical injection and electrical injection. The two-dimensional continuity equation o…
View article: Resolution characteristics of varying doping and varying composition Al<sub><i>x</i></sub>Ga<sub>1<i>–x</i></sub>As/GaAs reflective photocathodes
Resolution characteristics of varying doping and varying composition Al<sub><i>x</i></sub>Ga<sub>1<i>–x</i></sub>As/GaAs reflective photocathodes Open
According to the established resolution model and modulation transfer function (MTF) of varying doping and varing composition reflection-mode (r-mode) AlxGa1–xAs/GaAs photocathode, the resolutions of fou…
View article: Modulating infrared optoelectronic performance of GaInAsSb p-n junction by nanophotonic structure
Modulating infrared optoelectronic performance of GaInAsSb p-n junction by nanophotonic structure Open
GaInAsSb quaternary alloys have attracted much interest in infrared optoelectronic applications due to their versatility in a large range of energy gaps from 0.296 eV to 0.726 eV when lattice matches to GaSb wafer. However, due to the high…
View article: Optical resonance enhanced Cs activated nano-structured Ag photocathode
Optical resonance enhanced Cs activated nano-structured Ag photocathode Open
Metallic photocathodes have drawn attention due to their outstanding performances of ultrafast photoelectric response and long operational lifetime. However, due to their high work function and the large number of scattering events, metall…
View article: Mie-type GaAs nanopillar array resonators for negative electron affinity photocathodes
Mie-type GaAs nanopillar array resonators for negative electron affinity photocathodes Open
This paper presents modeling results of Mie-type GaAs nanopillar array resonant structures and the design of negative electron affinity photocathodes based on Spicer’s three-step model. For direct-bandgap GaAs with high intrinsic absorptio…
View article: Optical-Resonance-Enhanced Photoemission from Nanostructured <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline" overflow="scroll"><mml:mi>Ga</mml:mi><mml:mi>As</mml:mi></mml:math> Photocathodes
Optical-Resonance-Enhanced Photoemission from Nanostructured Photocathodes Open
A negative electron affinity photocathode based on GaAs nanopillar-array (NPA) Mie-type resonators is demonstrated and significant quantum efficiency enhancement is observed. Nanophotonic resonance assisted photoelectron emission into vacu…
View article: Quantum Efficiency Enhancement by Mie Resonance from GaAs Photocathodes Structured with Surface Nanopillar Arrays
Quantum Efficiency Enhancement by Mie Resonance from GaAs Photocathodes Structured with Surface Nanopillar Arrays Open
A new type of negative electron affinity (NEA) photocathode based on GaAs nanopillar array (NPA) Mie-type resonators was demonstrated for the first time. For visible wavelengths, the Mie resonances in GaAs NPA reduced light reflectivity to…
View article: Rhodamine B derivative-modified up-conversion nanoparticle probes based on fluorescence resonance energy transfer (FRET) for the solid-based detection of copper ions
Rhodamine B derivative-modified up-conversion nanoparticle probes based on fluorescence resonance energy transfer (FRET) for the solid-based detection of copper ions Open
A novel solid-based up-conversion FRET sensor is convenient for the direct detection of Cu2+ based on color change and emission spectra.
View article: Improvement on Size Uniformity of SiO2 Nanospheres Applied in Si Optical Resonance Nanopillar-arrays
Improvement on Size Uniformity of SiO2 Nanospheres Applied in Si Optical Resonance Nanopillar-arrays Open
Recently, optical resonances of nanostructured semiconductor were proved highly effective for light management in many optoelectronic devices.In this work, the monodispersed silica nanospheres with particle sizes of 270330 nm were synthes…
View article: An Analysis on Device-related Properties of the GaInSb Thermophotovoltaic Cell
An Analysis on Device-related Properties of the GaInSb Thermophotovoltaic Cell Open
The device-related parameters of 0.5eV Ga0.75In0.25Sb TPV cell were analyzed by considering the effects of carrier recombination and incident radiation spectra. Regarding the investigated device, we had demonstrated that the optimum struct…
View article: Negative Electron Affinity Gallium Arsenide Photocathodes Based on Optically Resonant Nanostructure
Negative Electron Affinity Gallium Arsenide Photocathodes Based on Optically Resonant Nanostructure Open
We report the design and fabrication of a new type of negative electron affinity (NEA) gallium arsenide (GaAs) photocathode with optically resonant nanostructures. We observed a significant enhancement of the quantum effi-ciency (QE) from …
View article: A comprehensive evaluation of factors that influence the spin polarization of electrons emitted from bulk GaAs photocathodes
A comprehensive evaluation of factors that influence the spin polarization of electrons emitted from bulk GaAs photocathodes Open
The degree of polarization of photoemitted electrons extracted from bulk unstrained GaAs photocathodes is usually considerably less than the theoretical maximum value of 50%, as a result of depolarization mechanisms that originate within t…
View article: Dynamics of graded-composition and graded-doping semiconductor nanowires under local carrier modulation
Dynamics of graded-composition and graded-doping semiconductor nanowires under local carrier modulation Open
Scanning photocurrent microscopy is a powerful tool for investigating charge transfer and internal fields, which strongly influence carrier statics and dynamics in semiconductor nanowires. We performed comprehensive numerical modeling of t…
View article: Negative electron affinity GaAs wire-array photocathodes
Negative electron affinity GaAs wire-array photocathodes Open
Negative electron affinity GaAs wire-array photocathodes have been fabricated by reactive ion etching and inductively coupled plasma etching of bulk GaAs material followed by Cs-O activation. Scanning electron microscope has revealed that …