Yamina André
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View article: Indepth doping assessment of thick doped GaAs layer by scanning spreading resistance microscopy
Indepth doping assessment of thick doped GaAs layer by scanning spreading resistance microscopy Open
Scanning spreading resistance microscopy (SSRM) measurements were performed on GaAs thick films grown by hydride vapor phase epitaxy technology under different growth conditions to evaluate their carrier concentrations. For this purpose, a…
View article: Circumventing the ammonia-related growth suppression for obtaining regular GaN nanowires by HVPE
Circumventing the ammonia-related growth suppression for obtaining regular GaN nanowires by HVPE Open
Selective area growth by hydride vapor phase epitaxy of GaN nanostructures with different shapes was investigated versus the deposition conditions including temperature and ammonia flux. Growth experiments were carried out on templates of …
View article: Long indium-rich InGaAs nanowires by SAG-HVPE
Long indium-rich InGaAs nanowires by SAG-HVPE Open
We demonstrate the selective area growth of InGaAs nanowires (NWs) on GaAs (111)B substrates using hydride vapor phase epitaxy (HVPE). A high growth rate of more than 50 μ m h −1 and high aspect ratio NWs were obtained. Composition along t…
View article: Spin precession of light holes in the spin-orbit field of strained GaAs nanowires
Spin precession of light holes in the spin-orbit field of strained GaAs nanowires Open
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View article: Anomalous ambipolar transport in depleted GaAs nanowires
Anomalous ambipolar transport in depleted GaAs nanowires Open
We have used a polarized microluminescence technique to investigate\nphotocarrier charge and spin transport in n-type depleted GaAs nanowires ($\n\\approx 10^{17}$ cm$^{-3}$ doping level). At 6K, a long-distance tail appears\nin the lumine…
View article: Growth of long III-As NWs by hydride vapor phase epitaxy
Growth of long III-As NWs by hydride vapor phase epitaxy Open
In this review paper, we focus on the contribution of hydride vapor phase epitaxy (HVPE) to the growth of III-As nanowires (NWs). HVPE is the third epitaxial technique involving gaseous precursors together with molecular beam epitaxy (MBE)…
View article: Comprehensive model toward optimization of SAG In-rich InGaN nanorods by hydride vapor phase epitaxy
Comprehensive model toward optimization of SAG In-rich InGaN nanorods by hydride vapor phase epitaxy Open
Controlled growth of In-rich InGaN nanowires/nanorods (NRs) has long been considered as a very challenging task. Here, we present the first attempt to fabricate InGaN NRs by selective area growth using hydride vapor phase epitaxy. It is sh…
View article: Long catalyst-free InAs nanowires grown on silicon by HVPE
Long catalyst-free InAs nanowires grown on silicon by HVPE Open
We report for the first time on the hydride vapor phase epitaxy (HVPE) growth of long (26 μm) InAs nanowires on Si(111) substrate. The thermodynamic and kinetic mechanisms involved during the growth of such long nanowires are identified.
View article: Optical and structural analysis of ultra-long GaAs nanowires after nitrogen-plasma passivation
Optical and structural analysis of ultra-long GaAs nanowires after nitrogen-plasma passivation Open
The structural and optical properties of individual ultra-long GaAs nanowires (NWs) were studied after different nitrogen passivation process conditions. The surface morphology of the NWs after passivation was characterized by high resolut…
View article: Dynamics of Gold Droplet Formation on SiO<sub>2</sub>/Si(111) Surface
Dynamics of Gold Droplet Formation on SiO<sub>2</sub>/Si(111) Surface Open
Au droplets are used as a catalyst for the growth of nanowires on Si(111) substrate via the vapor–liquid–solid (VLS) mechanism. The dewetting of a Au thin film is the most common method to obtain these droplets. The control of this step is…
View article: Formation of voids in selective area growth of InN nanorods in SiN<sub>x</sub> on GaN templates
Formation of voids in selective area growth of InN nanorods in SiN<sub>x</sub> on GaN templates Open
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View article: Morphological Control of InN Nanorods by Selective Area Growth–Hydride Vapor-Phase Epitaxy
Morphological Control of InN Nanorods by Selective Area Growth–Hydride Vapor-Phase Epitaxy Open
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