Y. Sonobe
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View article: Ultrathin CoPt alloy films with fcc (111) orientation and perpendicular magnetic anisotropy fabricated by electrodeposition
Ultrathin CoPt alloy films with fcc (111) orientation and perpendicular magnetic anisotropy fabricated by electrodeposition Open
In this study, ultrathin CoPt alloy films oriented along face-centered cubic (fcc) (111) with perpendicular magnetic anisotropy (PMA) are fabricated by electrodeposition at room temperature and normal pressure without annealing. By increas…
View article: Single current control of magnetization in vertical high-aspect-ratio nanopillars on in-plane magnetization layers
Single current control of magnetization in vertical high-aspect-ratio nanopillars on in-plane magnetization layers Open
Ferromagnetic pillars standing on a substrate hold promise for use in recording segments of multibit nonvolatile memories. These pillars exhibit high thermal stability in their magnetization owing to the influence of shape and perpendicula…
View article: Development of Ultra-Thin CoPt Films With Electrodeposition for 3-D Domain Wall Motion Memory
Development of Ultra-Thin CoPt Films With Electrodeposition for 3-D Domain Wall Motion Memory Open
The authors developed the electrodeposition technique for CoPt thin films applicable to 3-D domain wall motion memory (3D-DWMM). CoPt films with perpendicular magnetic anisotropy (PMA) were obtained in a wide range of the Co composition wh…
View article: Perpendicular magnetic anisotropy of an ultrathin Fe layer grown on NiO(001)
Perpendicular magnetic anisotropy of an ultrathin Fe layer grown on NiO(001) Open
The magnetic anisotropy and magnetic interactions at the interface between Fe and NiO(001) were investigated. Depending on the growth conditions of the NiO(001) layers and the post-annealing temperature, the preferential magnetization dire…
View article: Writing domains in nanowires using a spin torque oscillator
Writing domains in nanowires using a spin torque oscillator Open
Magnetic nanowires can be used to store information. There are various ways to write magnetic domains in nanowires, usually involving the use of an Oersted field. In this work the use of a spin torque oscillator to write domains in magneti…
View article: Band-folding-driven high tunnel magnetoresistance ratios in (111)-oriented junctions with <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:msub><mml:mi>SrTiO</mml:mi><mml:mn>3</mml:mn></mml:msub></mml:math> barriers
Band-folding-driven high tunnel magnetoresistance ratios in (111)-oriented junctions with barriers Open
We theoretically study the tunnel magnetoresistance (TMR) effect in (111)-oriented magnetic tunnel junctions (MTJs) with SrTiO3 barriers, Co/SrTiO3/Co(111) and Ni/SrTiO3/Ni(111). Our analysis combining the first-principles calculation and …
View article: Band-folding-driven high tunnel magnetoresistance ratios in (111)-oriented junctions with SrTiO$_3$ barriers
Band-folding-driven high tunnel magnetoresistance ratios in (111)-oriented junctions with SrTiO$_3$ barriers Open
We theoretically study the tunnel magnetoresistance (TMR) effect in (111)-oriented magnetic tunnel junctions (MTJs) with SrTiO$_{3}$ barriers, Co/SrTiO$_{3}$/Co(111) and Ni/SrTiO$_{3}$/Ni(111). Our analysis combining the first-principles c…
View article: Magnetization Precession at Sub‐Terahertz Frequencies in Polycrystalline Cu<sub>2</sub>Sb‐Type (Mn–Cr)AlGe Ultrathin Films
Magnetization Precession at Sub‐Terahertz Frequencies in Polycrystalline Cu<sub>2</sub>Sb‐Type (Mn–Cr)AlGe Ultrathin Films Open
A ferromagnetic metal nanolayer with a large perpendicular magnetic anisotropy, small saturation magnetization, and small magnetic damping constant is a crucial requirement for high‐speed spintronic devices. Fabrication of these devices on…
View article: Interfacial giant tunnel magnetoresistance and bulk-induced large perpendicular magnetic anisotropy in (111)-oriented junctions with fcc ferromagnetic alloys: A first-principles study
Interfacial giant tunnel magnetoresistance and bulk-induced large perpendicular magnetic anisotropy in (111)-oriented junctions with fcc ferromagnetic alloys: A first-principles study Open
We study the tunnel magnetoresistance (TMR) effect and magnetocrystalline\nanisotropy in a series of magnetic tunnel junctions (MTJs) with $L1_1$-ordered\nfcc ferromagnetic alloys and MgO barrier along the [111] direction. Considering\nthe…
View article: Buffer layer dependence of magnetoresistance effects in Co2Fe0.4Mn0.6Si/MgO/Co50Fe50 tunnel junctions
Buffer layer dependence of magnetoresistance effects in Co2Fe0.4Mn0.6Si/MgO/Co50Fe50 tunnel junctions Open
Buffer layer dependence of tunnel magnetoresistance (TMR) effects was investigated in Co2Fe0.4Mn0.6Si (CFMS)/MgO/Co50Fe50 magnetic tunnel junctions (MTJs). Pd, Ru and Cr were selected for the buffer layer materials, and MTJs with three dif…
View article: Interface Magnetic Anisotropy of Pd/Co<sub>2</sub>Fe<i><sub>x</sub></i>Mn<sub>1−<i>x</i></sub>Si/MgO Layered Structures
Interface Magnetic Anisotropy of Pd/Co<sub>2</sub>Fe<i><sub>x</sub></i>Mn<sub>1−<i>x</i></sub>Si/MgO Layered Structures Open
Interface magnetic anisotropy of Co2FexMn1−xSi Heusler alloy thin films were studied quantitatively. Films of Co2MnSi (x = 1, CMS), Co2Fe0.5Mn0.5Si (x = 0.5, CFMS), and Co2FeSi (x = 1, CFS) were fabricated onto MgO (001) substrates with an…