Yabao Zhang
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View article: Investigation on n-Type (−201) β-Ga<sub>2</sub>O<sub>3</sub> Ohmic Contact via Si Ion Implantation
Investigation on n-Type (−201) β-Ga<sub>2</sub>O<sub>3</sub> Ohmic Contact via Si Ion Implantation Open
Heavy doped n-type β-Ga 2 O 3 (HD-Ga 2 O 3 ) was obtained by employing Si ion implantation technology on unintentionally doped β-Ga 2 O 3 single crystal substrates. To repair the Ga 2 O 3 lattice damage and activate the Si after implantati…