Yangqian Wang
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View article: MBE growth of InAs/GaAs quantum dot lasers on V-grooved (001) Si
MBE growth of InAs/GaAs quantum dot lasers on V-grooved (001) Si Open
The monolithic integration of InAs/GaAs quantum-dot (QD) lasers on the silicon platform is critical for current high-speed optical communication and computing systems. However, the heteroepitaxial growth of high-performance InAs/GaAs QD la…
View article: MOCVD-grown InAs/InP quantum dot lasers with low threshold current
MOCVD-grown InAs/InP quantum dot lasers with low threshold current Open
We report low-threshold-current, high-yield InAs/InP quantum dot lasers in the C- and L-bands grown by metal-organic chemical vapor deposition (MOCVD). By optimizing the epitaxial growth conditions, including the introduction of a GaAs int…
View article: Low threshold InAs/InP quantum dot lasers
Low threshold InAs/InP quantum dot lasers Open
InAs/InP quantum dot (QD) lasers are promising light sources for optical communication due to their discrete energy states, offering advantages such as low threshold current density and enhanced thermal stability. However, challenges remai…
View article: High operating temperature (> 200 °C) InAs/GaAs quantum-dot laser with co-doping technique
High operating temperature (> 200 °C) InAs/GaAs quantum-dot laser with co-doping technique Open
Working reliably at elevated operating temperatures is a key requirement for semiconductor lasers used in optical communication. InAs/GaAs quantum-dot (QD) lasers have been considered a promising solution due to the discrete energy states …
View article: Modelling and optimization of Ge/GaAs uni-travelling carrier photodiodes
Modelling and optimization of Ge/GaAs uni-travelling carrier photodiodes Open
Uni-Travelling-Carrier Photodiodes (UTC-PDs) are pivotal for the advancement of high-speed optical communication systems. Current UTC-PDs have a trade-off between high performance and low production costs. The performance of conventional G…
View article: The effect of rapid thermal annealing on 1.55 μm InAs/InP quantum dots
The effect of rapid thermal annealing on 1.55 μm InAs/InP quantum dots Open
Rapid thermal annealing (RTA) can be used as a post-growth method to adjust the optical properties of III-V materials. This work investigates the efficacy of applying cyclic RTA to 1.55 μm multi-layer InAs/InAlGaAs quantum dots (QDs) grown…
View article: Simulation study of front-illuminated GaN avalanche photodiodes with hole-initiated multiplication
Simulation study of front-illuminated GaN avalanche photodiodes with hole-initiated multiplication Open
A flip-chip GaN p-i-n-i-n avalanche photodiode (APD) which integrates the merits of the prevailing APDs—hole-initiated multiplication process and front-illumination is proposed and studied via simulation. The simulation parameters used wer…
View article: Comparative Study on Dynamic Characteristics of GaN HEMT at 300K and 150K
Comparative Study on Dynamic Characteristics of GaN HEMT at 300K and 150K Open
Dynamic characteristics of GaN HEMT grown on a native substrate were systematically investigated at 300K and 150K. Transfer and output characteristics of the GaN HEMT were measured after various off-state stressing conditions and recovery …