Yannick De Koninck
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View article: Advanced characterization and parameter extraction of electrically injected InGaAs/GaAs nano-ridge lasers monolithically integrated on silicon
Advanced characterization and parameter extraction of electrically injected InGaAs/GaAs nano-ridge lasers monolithically integrated on silicon Open
The static and dynamic characteristics of electrically injected monolithic nano-ridge lasers emitting around the wavelength of 1030 nm are comprehensively investigated, providing critical insights into their performance and identifying pat…
View article: Semi-analytical model for electrically injected GaAs nano-ridge laser diodes monolithically integrated on silicon
Semi-analytical model for electrically injected GaAs nano-ridge laser diodes monolithically integrated on silicon Open
We present a semi-analytical model that can accurately explain the working principle behind the recently reported electrically injected In 0.2 Ga 0.8 As/GaAs monolithic nano-ridge lasers and more importantly show how the model can be used …
View article: Leakage mechanisms of sub-pA InGaAs/GaAs nano-ridge waveguide photodetectors monolithically integrated on a 300-mm Si wafer
Leakage mechanisms of sub-pA InGaAs/GaAs nano-ridge waveguide photodetectors monolithically integrated on a 300-mm Si wafer Open
We report on a comprehensive temperature dependent dark current study of high-quality InGaAs/GaAs multi quantum well waveguide photodetectors monolithically integrated on silicon. They are integrated through metalorganic vapor-phase select…
View article: GaAs nano-ridge laser diodes fully fabricated in a 300 mm CMOS pilot line
GaAs nano-ridge laser diodes fully fabricated in a 300 mm CMOS pilot line Open
Silicon photonics is a rapidly developing technology that promises to revolutionize the way we communicate, compute, and sense the world [1,2,3,4,5,6]. However, the lack of highly scalable, native CMOS-integrated light sources is one of th…
View article: GaAs nano-ridge laser diodes fully fabricated in a 300 mm CMOS pilot line
GaAs nano-ridge laser diodes fully fabricated in a 300 mm CMOS pilot line Open
Silicon photonics is a rapidly developing technology that promises to revolutionize the way we communicate, compute, and sense the world. However, the lack of highly scalable, native CMOS-integrated light sources is one of the main factors…
View article: Thermal Characterisation of Hybrid, Flip-Chip InP-Si DFB Lasers
Thermal Characterisation of Hybrid, Flip-Chip InP-Si DFB Lasers Open
WA detailed thermal analysis of a hybrid, flip-chip InP-Si DFB laser is presented in this work. The lasers were experimentally tested at different operating temperatures, which allowed for deriving their thermal performance characteristics…
View article: Unique design approach to realize an O-band laser monolithically integrated on 300 mm Si substrate by nano-ridge engineering
Unique design approach to realize an O-band laser monolithically integrated on 300 mm Si substrate by nano-ridge engineering Open
We introduce a new design space for optimizing III-V devices monolithically grown on Silicon substrates by extending the concept of nano-ridge engineering from binary semiconductors such as GaAs, InAs and GaSb to the ternary alloy InGaAs. …
View article: Wafer-Scale Hybrid Integration of InP DFB Lasers on Si Photonics by Flip-Chip Bonding with sub-300nm Alignment Precision
Wafer-Scale Hybrid Integration of InP DFB Lasers on Si Photonics by Flip-Chip Bonding with sub-300nm Alignment Precision Open
InP DFB lasers are flip-chip bonded to 300 mm Si photonic wafers using a pick-and-place tool with an advanced vision system, realizing high-precision and high-throughput passive assembly. By careful co-design of the InP-Si Photonics electr…
View article: 0.3pA Dark Current and 0.65A/W Responsivity 1020nm InGaAs/GaAs Nano-Ridge Waveguide Photodetector Monolithically Integrated on a 300-mm Si Wafer
0.3pA Dark Current and 0.65A/W Responsivity 1020nm InGaAs/GaAs Nano-Ridge Waveguide Photodetector Monolithically Integrated on a 300-mm Si Wafer Open
We report p-i-n InGaAs/GaAs multi-quantum well nano-ridge waveguide photodetectors monolithically integrated on a 300-mm Si wafer. The devices exhibit low dark currents of 0.3 pA ( 1.36×10−7A/cm2 ) at −1 V bias and internal responsivities …
View article: GaAs nano-ridge lasers on silicon (invited)
GaAs nano-ridge lasers on silicon (invited) Open
View article: Novel adiabatic coupler for III-V nano-ridge laser grown on a Si photonics platform
Novel adiabatic coupler for III-V nano-ridge laser grown on a Si photonics platform Open
While III-V lasers epitaxially grown on silicon have been demonstrated, an efficient approach for coupling them with a silicon photonics platform is still missing. In this paper, we present a novel design of an adiabatic coupler for interf…
View article: III-V-on-Silicon Photonic Devices for Optical Communication and Sensing
III-V-on-Silicon Photonic Devices for Optical Communication and Sensing Open
In the paper, we review our work on heterogeneous III-V-on-silicon photonic components and circuits for applications in optical communication and sensing. We elaborate on the integration strategy and describe a broad range of devices reali…
View article: Electrically pumped 1550 nm single mode III-V-on-silicon laser with resonant grating cavity mirrors
Electrically pumped 1550 nm single mode III-V-on-silicon laser with resonant grating cavity mirrors Open
This article presents a novel III-V on silicon laser. This work exploits the phenomenon that a passive silicon cavity, side-coupled to a III-V waveguide, will provide high and narrow-band reflectivity into the III-V waveguide: the resonant…
View article: Heterogeneously integrated III-V on silicon microlasers based on resonant grating mirrors
Heterogeneously integrated III-V on silicon microlasers based on resonant grating mirrors Open