Yannick Raffel
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View article: Ferroelectric Hafnium Oxide: A Potential Game‐Changer for Nanoelectronic Devices and Systems
Ferroelectric Hafnium Oxide: A Potential Game‐Changer for Nanoelectronic Devices and Systems Open
The discovery of ferroelectricity in hafnium oxide has propelled ferroelectric devices to the forefront of nanoelectronics, offering distinct advantages over alternative technologies. Ferroelectric memories, such as Ferroelectric Random Ac…
View article: Spike-Timing Dependent Learning Dynamics in Silicon-Doped Hafnium-Oxide-Based Ferroelectric Field Effect Transistors
Spike-Timing Dependent Learning Dynamics in Silicon-Doped Hafnium-Oxide-Based Ferroelectric Field Effect Transistors Open
Brain-inspired computing, with its potential for energy-efficient spatio-temporal data processing, has spurred significant interest in spiking neural networks and their hardware implementations. Leveraging their non-volatile memory and ana…
View article: Ferroelectric Field Effect Transistors–Based Content‐Addressable Storage‐Class Memory: A Study on the Impact of Device Variation and High‐Temperature Compatibility
Ferroelectric Field Effect Transistors–Based Content‐Addressable Storage‐Class Memory: A Study on the Impact of Device Variation and High‐Temperature Compatibility Open
Hafnium oxide (HfO 2 )‐based ferroelectric field effect transistors (FeFETs) revolutionize the emerging nonvolatile memory area, especially with the potential to replace flash memories for several applications. In this article, the suitabi…
View article: Improvement of low-frequency noise behavior with chloridic precursor materials at ALD process
Improvement of low-frequency noise behavior with chloridic precursor materials at ALD process Open
This article reports an improvement in the low-frequency noise characteristics in hafnium oxide-based (HfO2) field-effect transistors by different precursor materials at ALD process. The Hafniumoxide on the devices were fabricated once wit…
View article: An experimental comparison of interface trap density in hafnium oxide-based FeFETs
An experimental comparison of interface trap density in hafnium oxide-based FeFETs Open
In recent years, there has been significant progress in the development of high-κ materials in the semiconductor industry. Given that the contact between the channel and the electrode has a crucial impact on reliability, the selection of e…
View article: FeFET-Based Content-Addressable Storage Class Memory: Device Variation and High-Temperature Compatibility
FeFET-Based Content-Addressable Storage Class Memory: Device Variation and High-Temperature Compatibility Open
Hafnium oxide (HfO2)-based ferroelectric field effect transistors (FeFETs) have revolutionized the emerging non-volatile memory area, especially with the potential to replace flash memories for several applications. In this article, we inv…
View article: FeFET-Based Content-Addressable Storage Class Memory: Device Variation and High-Temperature Compatibility
FeFET-Based Content-Addressable Storage Class Memory: Device Variation and High-Temperature Compatibility Open
Hafnium oxide (HfO2)-based ferroelectric field effect transistors (FeFETs) have revolutionized the emerging non-volatile memory area, especially with the potential to replace flash memories for several applications. In this article, we inv…
View article: Monolithic-3D Inference Engine with IGZO Based Ferroelectric Thin Film Transistor Synapses
Monolithic-3D Inference Engine with IGZO Based Ferroelectric Thin Film Transistor Synapses Open
Instigated by the plethora of data generated by edge devices and IoT devices, machine learning has become the de facto choice of everyone for solving many tasks. Applications such as intelligent healthcare monitoring systems, smart watche…
View article: Importance of temperature dependence of interface traps in high-k metal gate stacks for silicon spin-qubit development
Importance of temperature dependence of interface traps in high-k metal gate stacks for silicon spin-qubit development Open
While semiconductor-based spin qubits have demonstrated promising fidelities exceeding 99.9%, their coherence time is limited by the presence of charge noise. However, fast process optimization for reduced charge noise becomes challenging …
View article: Roadmap of Ferroelectric Memories: From Discovery to 3D Integration
Roadmap of Ferroelectric Memories: From Discovery to 3D Integration Open
The versatility of hafnium oxide-based ferroelectric memories to function as a storage class memory, a synaptic device for neuromorphic implementation, and a device capable of high-density integration have made them attractive candidates f…
View article: Roadmap of Ferroelectric Memories: From Discovery to 3D Integration
Roadmap of Ferroelectric Memories: From Discovery to 3D Integration Open
The versatility of hafnium oxide-based ferroelectric memories to function as a storage class memory, a synaptic device for neuromorphic implementation, and a device capable of high-density integration have made them attractive candidates f…
View article: Impact of Fringing Field on the Memory Window of FeFET
Impact of Fringing Field on the Memory Window of FeFET Open
In this study, ferroelectric field-effect-transistors (FeFETs) with nitride (SiON) interface having various gate lengths (LG) and gate widths (WG) were investigated to study the influence of gate dimensions on the memory window (MW) and en…
View article: Impact of Fringing Field on the Memory Window of FeFET
Impact of Fringing Field on the Memory Window of FeFET Open
In this study, ferroelectric field-effect-transistors (FeFETs) with nitride (SiON) interface having various gate lengths (LG) and gate widths (WG) were investigated to study the influence of gate dimensions on the memory window (MW) and en…
View article: 28 nm high-k-metal gate ferroelectric field effect transistors based synapses — A comprehensive overview
28 nm high-k-metal gate ferroelectric field effect transistors based synapses — A comprehensive overview Open
In this invited article we present a comprehensive overview of 28 nm high-k-metal gate-based ferroelectric field effect transistor devices for synaptic applications. The devices under test were fabricated on 300 mm wafers at GlobalFoundrie…
View article: Design of Variation-Tolerant 1F-1T Memory Array for Neuromorphic Computing
Design of Variation-Tolerant 1F-1T Memory Array for Neuromorphic Computing Open
This letter proposes a memory cell, denoted by 1F-1T, consisting of a ferroelectric field-effect transistor (Fe-FET) cascoded with another current-limiting transistor (T). The transistor reduces the impact of drain current (Id) variations …
View article: Design of Variation-Tolerant 1F-1T Memory Array for Neuromorphic Computing
Design of Variation-Tolerant 1F-1T Memory Array for Neuromorphic Computing Open
This letter proposes a memory cell, denoted by 1F-1T, consisting of a ferroelectric field-effect transistor (Fe-FET) cascoded with another current-limiting transistor (T). The transistor reduces the impact of drain current (Id) variations …
View article: Demonstration of Differential Mode Ferroelectric Field‐Effect Transistor Array‐Based in‐Memory Computing Macro for Realizing Multiprecision Mixed‐Signal Artificial Intelligence Accelerator
Demonstration of Differential Mode Ferroelectric Field‐Effect Transistor Array‐Based in‐Memory Computing Macro for Realizing Multiprecision Mixed‐Signal Artificial Intelligence Accelerator Open
Harnessing multibit precision in nonvolatile memory (NVM)‐based synaptic core can accelerate multiply and accumulate (MAC) operation of deep neural network (DNN). However, NVM‐based synaptic cores suffer from the trade‐off between bit dens…
View article: Neuromorphic Computing with 28nm High-K-Metal Gate Ferroelectric Field Effect Transistors Based Artificial Synapses
Neuromorphic Computing with 28nm High-K-Metal Gate Ferroelectric Field Effect Transistors Based Artificial Synapses Open
This paper presents a comprehensive overview of 28 nm high-k-metal gate-based ferroelectric field effect transistor devices for synaptic applications. The device under test was fabricated on 300mm wafers at GlobalFoundries. The fabricated …
View article: Ferroelectric Content-Addressable Memory Cells with IGZO Channel: Impact of Retention Degradation on the Multibit Operation
Ferroelectric Content-Addressable Memory Cells with IGZO Channel: Impact of Retention Degradation on the Multibit Operation Open
Indium gallium zinc oxide (IGZO)-based ferroelectric thin-film transistors (FeTFTs) are being vigorously investigated for being deployed in computing-in-memory (CIM) applications. Content-addressable memories (CAMs) are the quintessential …
View article: 1F-1T Array: Current Limiting Transistor Cascoded FeFET Memory Array for Variation Tolerant Vector-Matrix Multiplication Operation
1F-1T Array: Current Limiting Transistor Cascoded FeFET Memory Array for Variation Tolerant Vector-Matrix Multiplication Operation Open
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View article: Neuromorphic Computing with 28nm High-K-Metal Gate Ferroelectric Field Effect Transistors Based Artificial Synapses
Neuromorphic Computing with 28nm High-K-Metal Gate Ferroelectric Field Effect Transistors Based Artificial Synapses Open
This paper presents a comprehensive overview of 28 nm high-k-metal gate-based ferroelectric field effect transistor devices for synaptic applications. The device under test was fabricated on 300mm wafers at GlobalFoundries. The fabricated …
View article: 28nm High-K-Metal Gate Ferroelectric Field Effect Transistors Based Artificial Synapses
28nm High-K-Metal Gate Ferroelectric Field Effect Transistors Based Artificial Synapses Open
This paper presents 28 nm high-k-metal gate (HKMG) based ferroelectric field effect transistor (FeFET) devices fabricated on 300mm wafers at GlobalFoundries’. The fabricated devices demonstrate 103 WRITE-endurance cycles and 104 seconds of…
View article: 28 nm HKMG-Based Current Limited FeFET Crossbar-Array for Inference Application
28 nm HKMG-Based Current Limited FeFET Crossbar-Array for Inference Application Open
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View article: Demonstration of Multiply-Accumulate Operation With 28 nm FeFET Crossbar Array
Demonstration of Multiply-Accumulate Operation With 28 nm FeFET Crossbar Array Open
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View article: Synergistic Approach of Interfacial Layer Engineering and READ-Voltage Optimization in HfO<sub>2</sub>-Based FeFETs for In-Memory-Computing Applications
Synergistic Approach of Interfacial Layer Engineering and READ-Voltage Optimization in HfO<sub>2</sub>-Based FeFETs for In-Memory-Computing Applications Open
This article reports an improvement in the performance of the hafnium oxide-based (HfO2) ferroelectric field-effect transistors (FeFET) achieved by a synergistic approach of interfacial layer (IL) engineering and READ-voltage optimization.…
View article: Roadmap for Ferroelectric Memory: Challenges and Opportunities for IMC Applications
Roadmap for Ferroelectric Memory: Challenges and Opportunities for IMC Applications Open
CMOS compatibility and the low process temperature of hafnium oxide(HfO2) make HfO2-based ferroelectric FETs an excellent candidate for logic, memory, and neuromorphic devices. This article discusses the challenges and opportunities of usi…
View article: Roadmap for Ferroelectric Memory: Challenges and Opportunities for IMC Applications
Roadmap for Ferroelectric Memory: Challenges and Opportunities for IMC Applications Open
CMOS compatibility and the low process temperature of hafnium oxide(HfO2) make HfO2-based ferroelectric FETs an excellent candidate for logic, memory, and neuromorphic devices. This article discusses the challenges and opportunities of usi…
View article: Monolithic-3D Inference Engine with IGZO Based Ferroelectric Thin Film Transistor Synapses
Monolithic-3D Inference Engine with IGZO Based Ferroelectric Thin Film Transistor Synapses Open
Instigated by the plethora of data generated by edge devices and IoT devices, machine learning has become the de facto choice of everyone for solving many tasks. Applications such as intelligent healthcare monitoring systems, smart watche…
View article: Monolithic-3D Inference Engine with IGZO Based Ferroelectric Thin Film Transistor Synapses
Monolithic-3D Inference Engine with IGZO Based Ferroelectric Thin Film Transistor Synapses Open
Instigated by the plethora of data generated by edge devices and IoT devices, machine learning has become the de facto choice of everyone for solving many tasks. Applications such as intelligent healthcare monitoring systems, smart watche…
View article: READ-Optimized 28nm HKMG Multibit FeFET Synapses for Inference-Engine Applications
READ-Optimized 28nm HKMG Multibit FeFET Synapses for Inference-Engine Applications Open
This paper reports 2bits/cell ferroelectric FET (FeFET) devices with 500 ns write pulse of maximum amplitude 4.5V for inference-engine applications. FeFET devices were fabricated using GlobalFoundries 28nm high-k-metal-gate (HKMG) process …