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View article: Quench rate dependence of center formation in Er implanted Si
Quench rate dependence of center formation in Er implanted Si Open
Er implanted Si (Er:Si) is a promising candidate for scalable planar quantum memory (QM) applications. Er has a preference to coordinate with O impurities, and multiple types of Er center are typically formed after a post implant anneal. F…
View article: Sketch and Peel Focused Ion Beam Patterning of Black Phosphorus for Mid‐Infrared Photonics
Sketch and Peel Focused Ion Beam Patterning of Black Phosphorus for Mid‐Infrared Photonics Open
Black phosphorus (BP) is an important mid‐infrared semiconductor, having a direct bandgap from monolayer (≈1.7 eV) to bulk (≈0.31 eV) thicknesses. The ability to nanopattern BP could enable new optoelectronic devices. However, existing nan…
View article: Photon emission gain in Er doped Si light emitting diodes by impact excitation
Photon emission gain in Er doped Si light emitting diodes by impact excitation Open
This work demonstrates photon emission gain, i.e., emission of multiple photons per injected electron, through impact excitation in Er-doped silicon light-emitting diodes (LEDs). Conventional methods for exciting Er ions in silicon suffer …
View article: Defects in graphite engineered by ion implantation for the self-assembly of gold nanoparticles
Defects in graphite engineered by ion implantation for the self-assembly of gold nanoparticles Open
Defect engineering in two-dimensional (2D) materials is essential for advancing applications such as gas sensing, single-atom catalysis, and guided nanoparticle self-assembly, enabling the creation of materials with tailored functionalitie…
View article: GaAs doped by self-assembled molecular monolayers
GaAs doped by self-assembled molecular monolayers Open
Self-assembled molecular monolayer doping remains as a research focus for its nature of being conformal, nondestructive, and self-limiting. Herein, we demonstrate a sulfur monolayer doping in GaAs, facilitated by (NH4)2Sx solution. The Van…
View article: Reproducible Monolayer MoS2 Devices Free of Resist Contamination by Gold Mask Lithography
Reproducible Monolayer MoS2 Devices Free of Resist Contamination by Gold Mask Lithography Open
Atomically thin MoS2 is a promising material for field-effect transistors (FETs) and electronic devices. However, traditional photolithographic processes introduce surface contamination to 2D materials, leading to poor electrical contacts …
View article: Rapid quench annealing of Er implanted Si for quantum networking applications
Rapid quench annealing of Er implanted Si for quantum networking applications Open
Erbium-implanted silicon (Er:Si) holds promise for quantum networking, but the formation of multiple Er centers poses a challenge. We show that the cubic center (Er-C) has C 2v or lower symmetry and propose all Er centers range between ful…
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Cover Image Open
A silicon‐integrated MXene X‐ray detector exhibits high sensitivity and an ultra‐low detection limit, enabling clear and precise single‐pixel X‐ray imaging image
View article: Rapid quench annealing of Er implanted Si for quantum networking applications
Rapid quench annealing of Er implanted Si for quantum networking applications Open
Erbium-implanted silicon (Er) holds promise for quantum networking, but the formation of multiple Er centres poses a challenge. We show that the cubic centre (Er-C) has C2v or lower symmetry, with Er centres ranging from fully Si- to fully…
View article: Rapid quench annealing of Er implanted Si for quantum networking applications
Rapid quench annealing of Er implanted Si for quantum networking applications Open
Erbium-implanted silicon (Er) holds promise for quantum networking, but the formation of multiple Er centres poses a challenge. We show that the cubic centre (Er-C) has C2v or lower symmetry, with Er centres ranging from fully Si- to fully…
View article: Rapid quench annealing of Er implanted Si for quantum networking applications
Rapid quench annealing of Er implanted Si for quantum networking applications Open
Erbium implanted silicon (Er:Si) is a promising platform for quantum networking applications, but a major obstacle is the formation of multiple Er centres. We show that the previously identified cubic centre (Er-C) has C2v or lower symmetr…
View article: High Performance MoS2 Phototransistors Photogated by PN Junction
High Performance MoS2 Phototransistors Photogated by PN Junction Open
Photodetectors based on two-dimensional (2D) atomically thin semiconductors suffer from low light absorption, limiting their potential for practical applications. In this work, we demonstrate a high-performance MoS2 phototransistors by int…
View article: High‐sensitive and fast <scp>MXene</scp>/silicon photodetector for single‐pixel X‐ray imaging
High‐sensitive and fast <span>MXene</span>/silicon photodetector for single‐pixel X‐ray imaging Open
The demand for high‐performance X‐ray detectors leads to material innovation for efficient photoelectric conversion and carrier transfer. However, current X‐ray detectors are often susceptible to chemical and irradiation instability, compl…
View article: Analytical photoresponses of Schottky contact MoS2 phototransistors
Analytical photoresponses of Schottky contact MoS2 phototransistors Open
High-gain photodetectors based on two-dimensional (2D) semiconductors, in particular those in photoconductive mode, have been extensively investigated in the past decade. However, the classical photoconductive theory was derived on two mis…
View article: Probing the band splitting near the $Γ$ point in the van der Waals magnetic semiconductor CrSBr
Probing the band splitting near the $Γ$ point in the van der Waals magnetic semiconductor CrSBr Open
This study investigates the electronic band structure of Chromium Sulfur Bromide (CrSBr) through comprehensive photoluminescence (PL) characterization. We clearly identify low-temperature optical transitions between two closely adjacent co…
View article: Analytical photoresponses of gated nanowire photoconductors
Analytical photoresponses of gated nanowire photoconductors Open
Low-dimensional photoconductors have extraordinarily high photoresponse and gain, which can be modulated by gate voltages as shown in literature. However, the physics of gate modulation remains elusive. In this work, we investigated the ph…
View article: Near-infrared and mid-infrared light emission of boron-doped crystalline silicon
Near-infrared and mid-infrared light emission of boron-doped crystalline silicon Open
The bottleneck in achieving fully integrated silicon photonics lies in silicon-based light-emitting devices that are compatible with standard CMOS technology. Dislocation loops created by implanting boron into silicon and annealing represe…
View article: Strong Exciton–Phonon Coupling as a Fingerprint of Magnetic Ordering in van der Waals Layered CrSBr
Strong Exciton–Phonon Coupling as a Fingerprint of Magnetic Ordering in van der Waals Layered CrSBr Open
The layered, air-stable van der Waals antiferromagnetic compound CrSBr exhibits pronounced coupling among its optical, electronic, and magnetic properties. As an example, exciton dynamics can be significantly influenced by lattice vibratio…
View article: Near-infrared and Mid-infrared Light Emission of Boron-doped Crystalline Silicon
Near-infrared and Mid-infrared Light Emission of Boron-doped Crystalline Silicon Open
The bottleneck in achieving fully integrated silicon photonics lies in silicon-based light-emitting devices that are compatible with standard CMOS technology. Dislocation loops by implanting boron into silicon and annealing represents an e…
View article: Analytical impact excitation of Er/O/B co-doped Si light emitting diodes
Analytical impact excitation of Er/O/B co-doped Si light emitting diodes Open
Er doped Si light emitting diodes may find important applications in the generation and storage of quantum information. These diodes exhibit an emission efficiency two orders of magnitude higher at reverse bias than forward bias due to imp…
View article: Validation of minority carrier recombination lifetimes in low-dimensional semiconductors found by analytical photoresponses
Validation of minority carrier recombination lifetimes in low-dimensional semiconductors found by analytical photoresponses Open
It is a formidable challenge to find the minority carrier recombination lifetime in low-dimensional devices as low-dimensionality increases the surface recombination rate and often reduces the recombination lifetime to a scale of picosecon…
View article: High-performance plasmonic mid-infrared bandpass filters by inverse design
High-performance plasmonic mid-infrared bandpass filters by inverse design Open
Plasmonic spectral filters composed of periodic nanostructured metal films offer novel opportunities for the development of multispectral imaging technologies in the mid-infrared region. However, traditional plasmonic filters, which typica…
View article: Analytical Gas‐Sensing Responses for Single‐Crystalline Semiconducting Gas Sensors (Adv. Sensor Res. 12/2023)
Analytical Gas‐Sensing Responses for Single‐Crystalline Semiconducting Gas Sensors (Adv. Sensor Res. 12/2023) Open
Analytical Gas Response In article 2300071, Huan Liu, Zehuan Li, Kai Li, and Yaping Dan establish an analytical gas response formula for chemiresistive gas sensors. Temkin isotherm model is applied to predict the density of adsorbed molecu…
View article: Strong Exciton-Phonon Coupling as a Fingerprint of Magnetic Ordering in van der Waals Layered CrSBr
Strong Exciton-Phonon Coupling as a Fingerprint of Magnetic Ordering in van der Waals Layered CrSBr Open
The layered, air-stable van der Waals antiferromagnetic compound CrSBr exhibits pronounced coupling between its optical, electronic, and magnetic properties. As an example, exciton dynamics can be significantly influenced by lattice vibrat…
View article: Analytical Gas‐Sensing Responses for Single‐Crystalline Semiconducting Gas Sensors
Analytical Gas‐Sensing Responses for Single‐Crystalline Semiconducting Gas Sensors Open
In this study, an analytical gas response formula is developed based on the classical gaseous molecule adsorption model. To validate the analytical formula, an array of silicon nanowires or microwires is fabricated by patterning the device…
View article: Hfo2-Based Rram with In-Situ Conductive Channels Induced by Nanoparticles to Improve Stability
Hfo2-Based Rram with In-Situ Conductive Channels Induced by Nanoparticles to Improve Stability Open
View article: Design of an optical slot waveguide amplifier based on Er3+-doped tellurite glass
Design of an optical slot waveguide amplifier based on Er3+-doped tellurite glass Open
The idea of a slot waveguide amplifier based on erbium-doped tellurite glass is first theoretically discussed in this work. Choosing the horizontal slot for low propagation loss, the TM mode profile compressed in the insertion layer was si…
View article: De-carbonization of self-assembled molecular monolayers doping in silicon
De-carbonization of self-assembled molecular monolayers doping in silicon Open
Unintentional C-related contamination can be readily introduced into the substrate in self-assembled molecular monolayer doping. These C contaminants can bind with dopants, forming interstitial defects, which will in return electrically de…
View article: Nonlinear absorption and integrated photonics applications of MoSSe
Nonlinear absorption and integrated photonics applications of MoSSe Open
This study explores the wavelength-dependent and pulse-width-dependent nonlinear optical properties of liquid-phase exfoliated molybdenum sulfide selenide (MoSSe) nanosheets. The saturable absorption response of MoSSe nanosheets in the vis…
View article: Fluorine‐Enhanced Room Temperature Luminescence of Er‐Doped Crystalline Silicon
Fluorine‐Enhanced Room Temperature Luminescence of Er‐Doped Crystalline Silicon Open
The silicon‐based light‐emitting devices are the bottleneck of fully integrated silicon photonics. Doping silicon with erbium (often along with oxygen) is an attractive approach to turn silicon into a luminescent material, which has been e…