Yimen Zhang
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View article: Parylene-based stretchable neural electrodes with serpentine interconnects
Parylene-based stretchable neural electrodes with serpentine interconnects Open
Parylene C has rapidly gained popularity as a flexible and biocompatible material for next generation chronic probes. However, the mechanical strains attributed to the intracranial pressure and micromotion may compromise the longevity and …
View article: An Aging Small-Signal Model for Degradation Prediction of Microwave Heterojunction Bipolar Transistor S-Parameters Based on Prior Knowledge Neural Network
An Aging Small-Signal Model for Degradation Prediction of Microwave Heterojunction Bipolar Transistor S-Parameters Based on Prior Knowledge Neural Network Open
In this paper, an aging small-signal model for degradation prediction of microwave heterojunction bipolar transistor (HBT) S-parameters based on prior knowledge neural networks (PKNNs) is explored. A dual-extreme learning machine (D-ELM) s…
View article: Band Alignment of β-Ga<sub>2</sub>O<sub>3</sub> with BaTiO<sub>3</sub>, SrTiO<sub>3</sub>, and Related Composites
Band Alignment of β-Ga<sub>2</sub>O<sub>3</sub> with BaTiO<sub>3</sub>, SrTiO<sub>3</sub>, and Related Composites Open
Integrating perovskite oxides BaTiO 3 (BTO), SrTiO 3 (STO) with β -Ga 2 O 3 is of great interest for developing β -Ga 2 O 3 power devices due to its promotion for improving uniformity in the electric field profile and breakdown characteris…
View article: Nanolaminated HfO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub> Dielectrics for High‐Performance Silicon Nanomembrane Based Field‐Effect Transistors on Biodegradable Substrates (Adv. Mater. Interfaces 32/2022)
Nanolaminated HfO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub> Dielectrics for High‐Performance Silicon Nanomembrane Based Field‐Effect Transistors on Biodegradable Substrates (Adv. Mater. Interfaces 32/2022) Open
Biodegradable Field-Effect Transistors High-performance transient field-effect transistors and capacitors are demonstrated by integrating HfO2/Al2O3 high-k bilayers on the transferred silicon nanomembranes and utilizing PLGA-gelatin-chitos…
View article: The design and optimization of novel elliptic cylindrical through‐silicon via and its temperature characterization
The design and optimization of novel elliptic cylindrical through‐silicon via and its temperature characterization Open
Through‐silicon via (TSV) technology is a key technology to realize multi‐layer chips and its structure model and transmission characteristics have attracted much attention. With the continuous reduction of chip size, higher requirements a…
View article: A novel SiC trench MOSFET with integrated Schottky barrier diode for improved reverse recovery charge and switching loss
A novel SiC trench MOSFET with integrated Schottky barrier diode for improved reverse recovery charge and switching loss Open
In this paper, a novel silicon carbide (SiC) trench metal oxide semiconductor field effect transistor (MOSFET) with improved reverse recovery charge and switching energy loss is proposed and investigated utilising ISE‐TCAD simulations. The…
View article: Effects of 5 MeV Proton Irradiation on Nitrided SiO2/4H-SiC MOS Capacitors and the Related Mechanisms
Effects of 5 MeV Proton Irradiation on Nitrided SiO2/4H-SiC MOS Capacitors and the Related Mechanisms Open
In this paper the effects of 5 MeV proton irradiation on nitrided SiO2/4H-SiC metal–oxide–semiconductor (MOS) capacitors are studied in detail and the related mechanisms are revealed. The density of interface states (Dit) is increased with…
View article: Experimental Study of High Performance 4H-SiC Floating Junction JBS Diodes
Experimental Study of High Performance 4H-SiC Floating Junction JBS Diodes Open
This paper reports the demonstration of a high performance 4H-SiC floating junction junction barrier Schottky (FJ_JBS) rectifier with a 30μm, 6×1015 cm-3-doped epitaxial layer. Extensive simulations have been performed to design, optimize …
View article: Effects of 5 MeV Proton Irradiation on 1200 V 4H-SiC VDMOSFETs ON-State Characteristics
Effects of 5 MeV Proton Irradiation on 1200 V 4H-SiC VDMOSFETs ON-State Characteristics Open
The effects of 5 MeV proton irradiation on ON-state characteristics of 1200 V 4H-SiC VDMOSFETs are investigated in this paper, and related mechanisms have been revealed by the analysis of their test structure of ohmic contacts, lateral nMO…
View article: The Study of Deep Level Traps and Their Influence on Current Characteristics of InP/InGaAs Heterostructures
The Study of Deep Level Traps and Their Influence on Current Characteristics of InP/InGaAs Heterostructures Open
The damage mechanism of proton irradiation in InP/InGaAs heterostructures was studied. The deep level traps were investigated in detail by deep level transient spectroscopy (DLTS), capacitance–voltage (C–V) measurements and SRIM (the stopp…
View article: Raman Study of Strain Relaxation from Grain Boundaries in Epitaxial Graphene Grown by Chemical Vapor Deposition on SiC
Raman Study of Strain Relaxation from Grain Boundaries in Epitaxial Graphene Grown by Chemical Vapor Deposition on SiC Open
Strains in graphene play a significant role in graphene-based electronics, but many aspects of the grain boundary effects on strained graphene remain unclear. Here, the relationship between grain boundary and strain property of graphene gr…
View article: Stress-induced charge trapping and electrical properties of atomic-layer-deposited HfAlO/Ga<sub>2</sub>O<sub>3</sub> metal–oxide–semiconductor capacitors
Stress-induced charge trapping and electrical properties of atomic-layer-deposited HfAlO/Ga<sub>2</sub>O<sub>3</sub> metal–oxide–semiconductor capacitors Open
Electrical properties and trapping characteristics of an atomic layer deposited Al-rich HfAlO/beta-Ga2O3 capacitor were evaluated via constant-voltage stress (CVS), capacitance-voltage (C-V), and current-voltage (I-V) measurements. The mag…
View article: Drain Current Model for Double Gate Tunnel-FETs with InAs/Si Heterojunction and Source-Pocket Architecture
Drain Current Model for Double Gate Tunnel-FETs with InAs/Si Heterojunction and Source-Pocket Architecture Open
The practical use of tunnel field-effect transistors is retarded by the low on-state current. In this paper, the energy-band engineering of InAs/Si heterojunction and novel device structure of source-pocket concept are combined in a single…
View article: A broadband high efficiency monolithic power amplifier with GaAs HBT
A broadband high efficiency monolithic power amplifier with GaAs HBT Open
A broadband single-stage power amplifier (PA) is presented in this paper. The proposed PA is designed and implemented using 2-µm GaAs HBT process to be targeted for wide range handset devices at operating frequency around 5 GHz. In this PA…
View article: A high linearity, 8-GSa/s track-and-hold amplifier in GaAs HBT technology
A high linearity, 8-GSa/s track-and-hold amplifier in GaAs HBT technology Open
A high linearity full differential 8 GSa/s track-and-hold amplifier (THA) is presented in this paper. The proposed THA is designed and implemented using 2-µm GaAs HBT technology to be targeted for faster operation in sampling systems at a …
View article: Design of Compensated Thermal Neutron Detector Based on He-3 Tube of SiC Micro-structure
Design of Compensated Thermal Neutron Detector Based on He-3 Tube of SiC Micro-structure Open
A design scheme for compensated thermal neutron detector based on He-3 tube of SiC micro-structure is proposed herein in order to improve the detection sensitivity of the thermal neutron detector and then to improve the detection precision…