Yongjie Zou
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View article: The role of nonequilibrium LO phonons, Pauli exclusion, and intervalley pathways on the relaxation of hot carriers in InGaAs/InGaAsP multi-quantum-wells
The role of nonequilibrium LO phonons, Pauli exclusion, and intervalley pathways on the relaxation of hot carriers in InGaAs/InGaAsP multi-quantum-wells Open
Under continuous-wave laser excitation in a lattice-matched In 0.53 Ga 0.47 As/In 0.8 Ga 0.2 As 0.44 P 0.56 multi-quantum-well (MQW) structure, the carrier temperature extracted from photoluminescence rises faster for 405 nm compared with …
View article: The Role of Nonequilibrium LO Phonons, Pauli Exclusion, and Intervalley Pathways on the Relaxation of Hot Carriers in InGaAs Multi-Quantum-Well Structures
The Role of Nonequilibrium LO Phonons, Pauli Exclusion, and Intervalley Pathways on the Relaxation of Hot Carriers in InGaAs Multi-Quantum-Well Structures Open
Under continuous-wave laser excitation in an InGaAs multi-quantum-well (MQW) structure, the carrier temperature extracted from photoluminescence rises faster for 405 nm excitation compared with 980 nm excitation, as the injected carrier de…
View article: Compensation effects on hole transport in C-doped <i>p</i>-type GaPN dilute nitrides
Compensation effects on hole transport in C-doped <i>p</i>-type GaPN dilute nitrides Open
Experimental studies of transport in GaPN dilute nitrides have evidenced low hole mobilities, which limit their applications in optoelectronics. Theoretical work to date has not explained the origin of such low hole mobilities. Here, we us…
View article: Electronic structure of <scp>GaP/Si</scp>(001) heterojunctions and the role of hydrogen passivation
Electronic structure of <span>GaP/Si</span>(001) heterojunctions and the role of hydrogen passivation Open
Epitaxially grown single crystal GaP on Si is of considerable interest due to being nearly lattice matched to Si, making it attractive for III‐V/Si solar cells. GaP has been used as a buffer layer for III‐V/Si solar cells and also in selec…