Yongju Zheng
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View article: Study of Carrier Mobilities in 4H-SiC MOSFETS Using Hall Analysis
Study of Carrier Mobilities in 4H-SiC MOSFETS Using Hall Analysis Open
The channel conduction in 4H-SiC metal–oxide–semiconductor field effect transistors (MOSFETs) are highly impacted by charge trapping and scattering at the interface. Even though nitridation reduces the interface trap density, scattering st…
View article: 4H-SiC MOSFETs With Borosilicate Glass Gate Dielectric and Antimony Counter-Doping
4H-SiC MOSFETs With Borosilicate Glass Gate Dielectric and Antimony Counter-Doping Open
In this letter, it is demonstrated that 4H-SiC MOSFETs with borosilicate glass (BSG) as the gate dielectric result in significantly higher channel mobility than standard nitride oxide annealed devices, due to lower density of near-interfac…