Young‐Woo Ok
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View article: Development of APCVD BSG and POCl<sub>3</sub> Codiffusion Process for Double-Side TOPCon Solar Cell Precursor Fabrication
Development of APCVD BSG and POCl<sub>3</sub> Codiffusion Process for Double-Side TOPCon Solar Cell Precursor Fabrication Open
This paper presents a commercially viable process for fabricating a high-quality double-side tunnel oxide passivating contact (DS-TOPCon) cell precursor using APCVD-deposited boron silicate glass and ex-situ POCl3 diffusion in a single hig…
View article: Field-Effect Passivation by Desired Charge Injection into SiNx Passivation in Crystalline-Silicon Solar Cells
Field-Effect Passivation by Desired Charge Injection into SiNx Passivation in Crystalline-Silicon Solar Cells Open
Effective surface passivation is a necessity for high efficiency crystalline silicon solar cells. The field effect passivation of p-type surfaces is typically accomplished using aluminum oxide (Al2O3) which contains a high density of negat…
View article: Hydrogen Sulfide Passivation for p-Type Passivated Emitter and Rear Contact Solar Cells
Hydrogen Sulfide Passivation for p-Type Passivated Emitter and Rear Contact Solar Cells Open
This work reports on the application of sulfur (S)-passivation to passivated emitter and rear contact (PERC) solar cells. The emitter surface was passivated by hydrogen sulfide (H2S) gas phase reaction and capped by a hydrogenated amorphou…
View article: Investigation of long-term light stability of negative charge injected into oxide-nitride-oxide passivation stack of crystalline silicon solar cells
Investigation of long-term light stability of negative charge injected into oxide-nitride-oxide passivation stack of crystalline silicon solar cells Open
A negatively charged oxide-nitride-oxide stack for field-effect passivation of crystalline silicon solar cells is discussed. The negative charge was injected into the stack by a plasma charge injection technology. Charge stability was stud…
View article: Novel Process for Screen-Printed Selective Area Front Polysilicon Contacts for TOPCon Cells Using Laser Oxidation
Novel Process for Screen-Printed Selective Area Front Polysilicon Contacts for TOPCon Cells Using Laser Oxidation Open
The efficiency potential of double-side tunnel oxide passivated contact (DS-TOPCon) solar cells is limited by parasitic absorption in the front poly-Si layer, despite excellent passivation and high VOC. The use of patterned poly-Si only un…
View article: Development of a co-anneal process for double-side TOPCon precursor fabricated by ex-situ POCI3 and APCVD boron diffusion
Development of a co-anneal process for double-side TOPCon precursor fabricated by ex-situ POCI3 and APCVD boron diffusion Open
The aim of this study was to develop a simple and industrially attractive co-anneal process to fabricate a high-quality DS-TOPCon precursor with textured n-TOPCon on front and planar p- TOPCon on rear by ex-situ POCI3 and APCVD boron diffu…
View article: Investigation on Light Stability of Injected Charge in α-SiN<sub>x</sub>: H by Plasma Charge Injection Technology
Investigation on Light Stability of Injected Charge in α-SiN<sub>x</sub>: H by Plasma Charge Injection Technology Open
The plasma charge injection technology reported earlier can be a low-cost alternative to the Al2O3 passivation technology. The charge stability under sunlight exposure is a key concern. We investigated the light-induced loss of injected ch…
View article: Modeling and Understanding of Rear Junction Double-Side Passivated Contact Solar Cells with Selective Area TOPCon on Front
Modeling and Understanding of Rear Junction Double-Side Passivated Contact Solar Cells with Selective Area TOPCon on Front Open
Device modeling is performed to propose > 25% efficient industry-compatible rear junction double-side passivated contacts solar cell structure with full area p-TOPCon on the rear and selective area n-TOPCon under the front grid pattern (se…
View article: Enhanced Stability of Exposed PECVD Grown Thin <i>n</i> <sup>+</sup> Poly-Si/SiO<i> <sub>x</sub> </i> Passivating Contacts With Al<sub>2</sub>O<sub>3</sub> Capping Layer During High Temperature Firing
Enhanced Stability of Exposed PECVD Grown Thin <i>n</i> <sup>+</sup> Poly-Si/SiO<i> <sub>x</sub> </i> Passivating Contacts With Al<sub>2</sub>O<sub>3</sub> Capping Layer During High Temperature Firing Open
Carrier selective poly-Si/SiOx contacts have become a very strong contender for next generation high-efficiency Si solar cells as well as Si-based tandem cells. A thin unmetallized poly-Si/SiOx passivated contact on the top surface of the …
View article: Analysis of the negative charges injected into a SiO<sub>2</sub>/SiN<sub>x</sub> stack using plasma charging technology for field‐effect passivation on a boron‐doped silicon surface
Analysis of the negative charges injected into a SiO<sub>2</sub>/SiN<sub>x</sub> stack using plasma charging technology for field‐effect passivation on a boron‐doped silicon surface Open
We investigated field‐effect passivation by injecting negative charges into SiO 2 /SiN x stack using a plasma charge injection technique. The Si/SiO 2 /SiN x samples exhibited a very high flat‐band shift with a high injected negative charg…
View article: Quantitative Understanding and Implementation of Screen-printed p+ Poly-Si/Oxide Passivated Contact to Enhance the Efficiency of p-PERC Cells
Quantitative Understanding and Implementation of Screen-printed p+ Poly-Si/Oxide Passivated Contact to Enhance the Efficiency of p-PERC Cells Open
Investigate the passivation quality of p-TOPCon to evaluate the promise and viability of upgraded p-PERC with p-TOPCon back. Model and simulate the p-PERC and p-TOPCon cells to predict the gain in cell efficiency by implementation of the p…
View article: 26.7% Efficient 4-Terminal Perovskite–Silicon Tandem Solar Cell Composed of a High-Performance Semitransparent Perovskite Cell and a Doped Poly-Si/SiO<sub>x</sub>Passivating Contact Silicon Cell
26.7% Efficient 4-Terminal Perovskite–Silicon Tandem Solar Cell Composed of a High-Performance Semitransparent Perovskite Cell and a Doped Poly-Si/SiO<sub>x</sub>Passivating Contact Silicon Cell Open
The rapid rise in single-junction perovskite solar cell (PSC) efficiencies, tunable bandgap, and low-cost solution processability make PSCs an attractive candidate for tandems with Si bottom cells. However, the challenge is to fabricate a …
View article: Passivated Tunneling Contacts to N-Type Wafer Silicon and Their Implementation into High Performance Solar Cells: Preprint
Passivated Tunneling Contacts to N-Type Wafer Silicon and Their Implementation into High Performance Solar Cells: Preprint Open
We present a case that passivated contacts based on a thin tunneling oxide layer, combined with a transport layer with properly selected work function and band offsets, can lead to high efficiency c-Si solar cells. Passivated contacts cont…
View article: Fabrication and Modeling of High-Efficiency Front Junction N-Type Silicon Solar Cells With Tunnel Oxide Passivating Back Contact
Fabrication and Modeling of High-Efficiency Front Junction N-Type Silicon Solar Cells With Tunnel Oxide Passivating Back Contact Open
This paper reports on in-depth understanding, modeling, and fabrication of 23.8% efficient 4 cm2 n-type Float Zone (FZ) silicon cells with a selective boron emitter and photolithography contact on front and tunnel oxide passivating contact…
View article: Modeling the potential of screen printed front junction CZ silicon solar cell with tunnel oxide passivated back contact
Modeling the potential of screen printed front junction CZ silicon solar cell with tunnel oxide passivated back contact Open
Carrier selective passivated contacts composed of thin oxide, n + polycrystalline Si and metal on top of a n‐Si absorber can significantly lower the recombination current density ( J orear ≤8 fA/cm 2 ) under the contact while providing exc…