Yourun Zhang
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View article: Low working loss Si/4H–SiC heterojunction MOSFET with analysis of the gate-controlled tunneling effect
Low working loss Si/4H–SiC heterojunction MOSFET with analysis of the gate-controlled tunneling effect Open
A silicon (Si)/silicon carbide (4H–SiC) heterojunction double-trench metal-oxide-semiconductor field effect transistor (MOSFET) (HDT-MOS) with the gate-controlled tunneling effect is proposed for the first time based on simulations. In thi…
View article: A Novel Low On−State Resistance Si/4H−SiC Heterojunction VDMOS with Electron Tunneling Layer Based on a Discussion of the Hetero−Transfer Mechanism
A Novel Low On−State Resistance Si/4H−SiC Heterojunction VDMOS with Electron Tunneling Layer Based on a Discussion of the Hetero−Transfer Mechanism Open
In this study, we propose a novel silicon (Si)/silicon carbide (4H−SiC) heterojunction vertical double−diffused MOSFET with an electron tunneling layer (ETL) (HT−VDMOS), which improves the specific on−state resistance (RON), and examine th…
View article: Analysis and Calculation of Miller Capacitor in Amplifier for 8 Bits Pipeline ADC
Analysis and Calculation of Miller Capacitor in Amplifier for 8 Bits Pipeline ADC Open
This design pays much attention on analyzing and calculating Miller capacitor in operational amplifier to optimist OP (Operational Amplifier).The design for a 8-bit high speed, low power pipeline ADC is based on standard 0.18um CMOS techno…