Youssef Hamdaoui
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View article: 1200-V Fully Vertical GaN-on-Silicon p-i-n Diodes With Avalanche Capability and High On-State Current Above 10 A
1200-V Fully Vertical GaN-on-Silicon p-i-n Diodes With Avalanche Capability and High On-State Current Above 10 A Open
International audience
View article: Optimization of Non-Alloyed Backside Ohmic Contacts to N-Face GaN for Fully Vertical GaN-on-Silicon-Based Power Devices
Optimization of Non-Alloyed Backside Ohmic Contacts to N-Face GaN for Fully Vertical GaN-on-Silicon-Based Power Devices Open
In the framework of fully vertical GaN-on-Silicon device technology development, we report on the optimization of non-alloyed ohmic contacts on the N-polar n+-doped GaN face backside layer. This evaluation is made possible by using pattern…
View article: High performance fully vertical GaN on Silicon PIN diodes for next generation power devices
High performance fully vertical GaN on Silicon PIN diodes for next generation power devices Open
International audience
View article: Optimization of Non-alloyed Backside Ohmic Contacts to N-face GaN for Fully Vertical GaN-on-Silicon Based Power Devices
Optimization of Non-alloyed Backside Ohmic Contacts to N-face GaN for Fully Vertical GaN-on-Silicon Based Power Devices Open
In the framework of fully vertical GaN-on-Silicon device technology development, we report on the optimization of non-alloyed ohmic contacts on the N-polar n+ doped GaN face backside layer. This evaluation is made possible by using pattern…
View article: High quality fully versus pseudo vertical GaN-on-Silicon pn diodes
High quality fully versus pseudo vertical GaN-on-Silicon pn diodes Open
We report on high quality vertical GaN-on-silicon pn diodes. A successful scaling of the drift region thicknesses resulted in state-of-the-art breakdown voltage well above 1000 V (corresponding to a critical electric field of 2.3 MV/cm) to…
View article: Demonstration of avalanche capability in 800 V vertical GaN-on-silicon diodes
Demonstration of avalanche capability in 800 V vertical GaN-on-silicon diodes Open
High-quality pseudo-vertical p–n diodes using a GaN-on-silicon heterostructure are reported. An optimized fabrication process including a beveled deep mesa as edge termination and reduced ohmic contact resistances enabled high on-state cur…
View article: Dislocation density reduction for vertical GaN devices on 200 mm Si
Dislocation density reduction for vertical GaN devices on 200 mm Si Open
View article: Towards High Performance Fully Vertical GaN-on-Silicon PIN Diodes
Towards High Performance Fully Vertical GaN-on-Silicon PIN Diodes Open
View article: High quality drift layer thickness scaling in vertical GaN-on-Silicon PIN diodes
High quality drift layer thickness scaling in vertical GaN-on-Silicon PIN diodes Open
We report on high drift layer quality in vertical PIN diodes grown on silicon substrate combining low Ron = 0.35 mΩ.cm², and high critical electric field of 1.82 MV/cm. The impact of the drift region thickness on the device performances sh…
View article: Local substrate removal for next generation GaN-on-Silicon power transistors
Local substrate removal for next generation GaN-on-Silicon power transistors Open
View article: [Invited] Local substrate removal for next generation GaN-on-Silicon power transistors
[Invited] Local substrate removal for next generation GaN-on-Silicon power transistors Open
International audience